Display device with a thin film transistor and storage condenser

Claim 2

A display device comprising a first substrate provided with an array of drive switching elements, said array including a plurality of gate lines mutually separated and mutually insulated, an insulating layer formed on said gate lines, semi-conductor layers formed on said insulating layer, a plurality of drains constituting display segments and each overlying at least one said gate line with at least said insulating layer being positioned therebetween, and a plurality of source lines positioned to cross said gate lines and each connected through at least one semiconductor layer to at least one drain, and another substrate mounted in opposition to said array on said first substrate having a counter electrode whereby display by an electro-optical change generated between said two substrates may be performed, and wherein each said semi-conductor layer is of a smaller area than that of one of said drains, and each of said gate lines has substantially the same width as that of an overlying drain, each said gate line and one overlying drain thereby constituting a condenser.

Claim 3

A display device according to claim 1, wherein each said drive switching element is composed of a thin film transistor.

Claim 4

A display device according to the claim 2, wherein each said semi-conductor layer constitutes a portion of one said thin film transistor and is composed of amorphous silicon.

Claim 5

A display device according to claim 1, wherein each said drive switching element has a rectangular form elongated in a direction across said gate lines.

Claim 6

A display device according to claim 1, wherein said semi-conductor layers are formed over said gate lines and across said insulating layer, with the same pitch as that of the display segments.

Claim 7

A display device according to claim 1, wherein a liquid crystal layer is sandwiched between said two substrates.

Claim 8

A display device comprising a first substrate provided with a drive switching element array, including a plurality of gate lines mutually separated and mutually insulated, a plurality of semi-conductor layers, a first insulating layer interposed between said gate lines and said semi-conductor layers, a plurality of drains constituting display segments each in contact with one of said semi-conductor layers, and a plurality of source lines also insulated from said gate lines by said first insulating layer, positioned to cross said gate lines, and each in contact with at least one semi-conductor layer; a conductive film interposed between said first substrate and said drains and opposed to said drains; a second insulating layer interposed between said conductive film and said gate lines and between said conductive film and said drains; and a second substrate mounted in opposition to said array on said first substrate and provided with a counter electrode whereby display by an electro-optical change generated between said substrates may be performed, and whereby a capacitance is formed between said conductive film and said drains.

Claim 9

A display device comprising a first substrate provided with a drive switching element array, including a plurality of gate lines mutually separated and mutually insulated, a plurality of semi-conductor layers, a first insulating layer interposed between said gate lines and said semi-conductor layers, a plurality of drains constituting display segments each in contact with one of said semi-conductor layers, and a plurality of source lines also insulated from said gate lines by said first insulating layer, positioned to cross said gate lines, and each in contact with at least one semi-conductor layer; a conductive film interposed between said first substrate and said drains and opposed to said drains; a second insulating layer interposed between said conductive film and said gate lines and between said conductive film and said drains; and a second substrate mounted in opposition to said array on said first substrate and provided with a counter electrode whereby display by an electro-optical change generated between said substrates may be performed, and whereby a capacitance is formed between said conductive film and said drains.

Claim 10

A display device according to claim 7, wherein said drive switching element array is composed of a thin film transistor array.

Claim 11

A display device according to claim 8, wherein each said semi-conductor layer constitutes a portion of one of said thin film transistors and is made of amorphous silicon.

Claim 12

A display device according to claim 7, wherein said conductive layer formed on said first substate is a transparent conductive layer.

Claim 13

A display device according to claim 10, wherein said transparent conductive layer formed on said first substrate is a layer of In 2 O 3 or SnO 2 .

Claim 14

A display device according to claim 7, wherein said conductive layer formed on said first substrate is an opaque conductive layer.

Claim 15

A display device according to claim 12, wherein said opaque conductive layer is formed of a metal or an alloy of metals selected from the group consisting of Al, Ag, Pd, Pt, Cr, Ni, Mo and Si.

Claim 16

A display device according to claim 7, wherein said second insulating layer formed on said conductive layer overlying said first substrate is composed of at least a compound selected from the group consisting of SiO, SiO 2 , TiO 2 , ZrO 2 , Al 2 O 3 , CeO 2 , MgF 2 , CaF 2 and Si 3 N 4 .

Claim 17

A display device according to claim 7, wherein a liquid crystal layer is sandwiched between said two substrates.

Claim 18

A display device comprising a first substrate provided with a drive switching element array including plural stripe-formed gate lines mutually separated and mutually insulated, an insulating layer and a semi-conductor layer provided in succession on said gate lines, plural source lines formed on said two layers so as to cross said gate lines, and mutually separated plural drains positioned on said semiconductor layer so as to be separated from said source lines and to be positioned to overlie and to bridge two adjacent gate lines, and another substrate mounted in opposition to said array on said first substrate and provided with a counter electrode, whereby display by an electro-optical change generated between two substrates may be performed.

Claim 19

A display device comprising a first substrate provided with a drive switching element array including plural stripe-formed gate lines mutually separated and mutually insulated, an insulating layer and a semi-conductor layer provided in succession on said gate lines, plural source lines formed on said two layers so as to cross said gate lines, and mutually separated plural drains positioned on said semiconductor layer so as to be separated from said source lines and to be positioned to overlie and to bridge two adjacent gate lines, and another substrate mounted in opposition to said array on said first substrate and provided with a counter electrode, whereby display by an electro-optical change generated between two substrates may be performed.

Claim 20

A display device according to claim 16, wherein each drive switching element in said array is composed of a thin film transistor.

Claim 21

A display device according to claim 17, wherein said semi-conductor layer constitutes a portion of each of said thin film transistors and is made of amorphous silicon.

Claim 22

A display device according to claim 16, wherein each of said drains has a non-rectangular shape in plan view to overlie and to bridge two adjacent gate lines as aforesaid.

Claim 23

A display device according to claim 16, wherein a liquid crystal layer is sandwiched between said two substrates.

Claim 24

A display device including a first substrate; a conductive layer formed on said first substrate; a first insulating layer formed on said conductive layer; a drive switching element array provided on said first insulating layer, comprising an array of thin film transistors including a plurality of gate lines mutually separated and mutually insulated, a second insulating layer formed on said gate lines, a plurality of semi-conductor layers each constituting a portion of one of said thin film transistors, being made of amorphous silicon, and being formed on said second insulating layer, a plurality of drains constituting display segments also formed on said second insulating layer, and a plurality of source lines formed on said second insulating layer positioned to cross said gate lines and each connected through at least one semi-conductor layer to at least one drain; and a second substrate mounted in opposition to said array on said first substrate and provided with a counter electrode whereby display by an electro-optical change generated between said substrates may be performed.

Claim 25

A display device including a first substrate; a conductive layer formed on said first substrate; a first insulating layer formed on said conductive layer; a drive switching element array provided on said first insulating layer, comprising an array of thin film transistors including a plurality of gate lines mutually separated and mutually insulated, a second insulating layer formed on said gate lines, a plurality of semi-conductor layers each constituting a portion of one of said thin film transistors, being made of amorphous silicon, and being formed on said second insulating layer, a plurality of drains constituting display segments also formed on said second insulating layer, and a plurality of source lines formed on said second insulating layer positioned to cross said gate lines and each connected through at least one semi-conductor layer to at least one drain; and a second substrate mounted in opposition to said array on said first substrate and provided with a counter electrode whereby display by an electro-optical change generated between said substrates may be performed.