Piezoresistive accelerometer

Claim 2

An acceleration transducer comprising: a mounting substrate; a central pedestal support portion coupled to said substrate; an elastic semiconductor diaphragm portion coupled to and peripherally surrounding said central pedestal support portion and extending generally parallel to said substrate; a mass ring portion coupled to and peripherally surrounding said diaphragm portion and spaced from said substrate, said mass ring portion being movable in response to acceleration to cause bending movement of said diaphragm portion; and means coupled to said diaphragm portion for detecting strain induced in said diaphragm portion in response to bending movement of said diaphragm portion for providing an output signal representing acceleration.

Claim 3

The transducer of claim 1 wherein said mass ring portion is constructed to move in response to acceleration substantially in one axis and said means for detecting includes a bridge circuit coupled to provide an output representing acceleration in said one axis.

Claim 4

The transducer of claim 1 wherein said mass ring portion is constructed to move in response to acceleration in each of three orthogonal axes and said means for detecting includes means for providing outputs representing acceleration in each of said three orthogonal axes.

Claim 5

The transducer of claim 1 wherein said substrate is an electrically non-conductive substrate and said support portion, diaphragm portion, and mass ring portion, are integrally formed from a single piece of semiconductive material.

Claim 6

The transducer of claim 4 wherein said support portion has a rectangular configuration and said diaphragm portion and mass ring portion are formed as rectangular rings.

Claim 7

The apparatus of claim 5 wherein said support portion, diaphragm portion, and mass ring portion are etched from a single piece of semiconductor material.

Claim 8

The transducer of claim 5 wherein said diaphragm portion has a surface and said means for detecting strain comprises a plurality of piezoresistive strain gauges located on the surface of said diaphragm portion with one piezoresistive gauge being positioned adjacent each side of the rectangular pedestal support portion on the surface of said diaphragm portion.

Claim 9

The transducer of claim 7 wherein said piezoresistive gauges are formed as a plurality of folded elongated strips all of which are arranged parallel to a preselected crystallographic axis of the semiconductor diaphragm portion.

Claim 10

The transducer of claim 7 wherein said mass ring portion is constructed to move in response to acceleration in one axis and said piezoresistive strain gauges are coupled to form a bridge circuit, the output of which represents acceleration in said one axis.

Claim 11

The transducer of claim 1 further including damping means coupled to said substrate and located adjacent the periphery of said mass ring portion for limiting the movement of said mass ring portion.

Claim 12

The transducer of claim 10 wherein said damping means comprises an L-shaped ring having a first portion coupled to and extending generally perpendicular to said substrate and a second portion projecting generally perpendicular to said first portion and extending over said mass ring portion to confine the movement of the mass ring portion between said second portion and said substrate.

Claim 13

The transducer of claim 1 further including temperature sensing means coupled in a zero-stress area on said diaphragm portion for providing an output indicative of the temperature of said diaphragm and strain detecting means.

Claim 14

The transducer of claim 1 wherein said mass ring portion is constructed to have a supplemental mass such that the center of mass of the ring portion is located a predetermined distance above the diaphragm and the mass ring portion moves in response to acceleration in each of three orthogonal axes, said means for detecting including means for providing outputs representing acceleration in each of said three orthogonal axes.

Claim 15

The transducer of claim 13 wherein said means for detecting strain includes a plurality of piezoresistive strain gauges located on the surface of said diaphragm portion wherein selected outputs from different combinations of said piezoresistive gauges provide the outputs representing acceleration in each of said three orthogonal axes.

Claim 16

An acceleration transducer comprising: a substrate having a planar surface; an acceleration-responsive semiconductor means formed from a single piece of semiconductor material and including a rectangular center pedestal support portion rigidly coupled to said substrate and having an elastic, planar diaphragm portion formed as a rectangular ring peripherally extending from said support portion generally parallel to the planar surface of said substrate, and further including a mass ring portion formed as a rectangular ring peripherally extending from said diaphragm portion and spaced from the planar surface of said substrate for movement in response to acceleration, said diaphragm portion having areas adjacent said support portion in which stress is induced in response to bending movement of said diaphragm and further having areas of zero-stress during bending movement; first, second, third and fourth piezoresistive means coupled on said diaphragm portion and located symmetrically about the periphery of said support portion with a radial separation of 90 degrees about the center of said support portion, each of said piezoresistive means being positioned to provide a measure of the strain produced in said diaphragm in response to bending movement caused by movement of said mass ring portion, said first, second, third and fourth piezoresistive means providing outputs representing acceleration; and fifth and sixth piezoresistive means coupled on said diaphragm portion in a zero-stress region for providing an output representing temperature of said semiconductor means.

Claim 17

An acceleration transducer comprising: a substrate having a planar surface; an acceleration-responsive semiconductor means formed from a single piece of semiconductor material and including a rectangular center pedestal support portion rigidly coupled to said substrate and having an elastic, planar diaphragm portion formed as a rectangular ring peripherally extending from said support portion generally parallel to the planar surface of said substrate, and further including a mass ring portion formed as a rectangular ring peripherally extending from said diaphragm portion and spaced from the planar surface of said substrate for movement in response to acceleration, said diaphragm portion having areas adjacent said support portion in which stress is induced in response to bending movement of said diaphragm and further having areas of zero-stress during bending movement; first, second, third and fourth piezoresistive means coupled on said diaphragm portion and located symmetrically about the periphery of said support portion with a radial separation of 90 degrees about the center of said support portion, each of said piezoresistive means being positioned to provide a measure of the strain produced in said diaphragm in response to bending movement caused by movement of said mass ring portion, said first, second, third and fourth piezoresistive means providing outputs representing acceleration; and fifth and sixth piezoresistive means coupled on said diaphragm portion in a zero-stress region for providing an output representing temperature of said semiconductor means.

Claim 18

The transducer of claim 15 wherein said mass ring portion is constructed to respond to acceleration in a single axis and said first, second, third and fourth piezoresistive means are coupled in a bridge circuit to provide an output representing acceleration in said axis.

Claim 19

The transducer of claim 15 further including a damping means having a first portion coupled to said substrate, adjacent said mass ring portion and having a second portion which extends above the mass ring portion to limit movement of the mass ring portion between said second portion and said substrate.

Claim 20

The transducer of claim 15 wherein said mass ring portion further includes a supplemental mass such that the center of mass of the mass ring portion is located a predetermined distance above the diaphragm and the mass ring portion moves in response to acceleration in each of three orthogonal axes, said first, second, third and fourth piezoresistive means providing outputs representing acceleration in each of said three orthogonal axes.