Patent US4426407A successfully refreshed from Google Patents.
US4426407A
Expired / Lapsed
US
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Process for producing thin-film transistors on an insulating substrate
Assignee: Orange SA
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Filing: 1982-12-20
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Granted: 1984-01-17
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Expires: 2002-12-20
Abstract
Abstract Process for the production of thin-film transistors on an insulating substrate, wherein it comprises the following stages: 1. deposition on an insulating substrate of a coating of a metal able to form a silicide in contact with a silicon, 2. photoengraving of the first metal coating to define the sources, drains and channels for the future transistors and various connections between the transistors, 3. deposition of a silicon coating by reactive gaseous phase plasma, which leads to the appearance of a silicide coating in contact with the metal of the photoengraved coating, 4. deposition of a silica coating by reactive gaseous phase plasma, 5. deposition of a conductive coating by reactive gaseous phase plasma, 6. photoengraving of the conductive coating-silica coating-silicon coating system, without etching the silicide covering the photoengraved metal coating. Application to the production of large-area electronic components used e.g. in the production of flat display screens and the like.
Inventors
- 👤 Francois Morin
- 👤 Jean-Luc Favennec
- 👤 Madeleine Bonnel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 17:38
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6737; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D30/6746
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
127 words
A process for the production of thin-film transistors on an insulating substrate, wherein it comprises the following stages: deposition on an insulating substrate of a coating of a metal able to form a silicide in contact with a silicon; photoengraving of the metal coating to define the sources, drains and channels for the transistors and various connections between the transistors; deposition of a silicon coating by reactive gaseous phase plasma, a silicide coating forming on the surface of the metal of the photoengraved coating; deposition of a silica coating by reactive gaseous phase plasma; deposition of a conductive coating by reactive gaseous phase plasma, and photoengraving of the conductive coating - silica coating - silicon coating system, without etching the silicide coating covering the photoengraved metal coating.
Claim 2
Dependent Claim
127 words
A process for the production of thin-film transistors on an insulating substrate, wherein it comprises the following stages: deposition on an insulating substrate of a coating of a metal able to form a silicide in contact with a silicon; photoengraving of the metal coating to define the sources, drains and channels for the transistors and various connections between the transistors; deposition of a silicon coating by reactive gaseous phase plasma, a silicide coating forming on the surface of the metal of the photoengraved coating; deposition of a silica coating by reactive gaseous phase plasma; deposition of a conductive coating by reactive gaseous phase plasma, and photoengraving of the conductive coating - silica coating - silicon coating system, without etching the silicide coating covering the photoengraved metal coating.
Claim 3
Dependent Claim
32 words
A process according to claim 1, wherein it also comprises the operations of post-hydrogenating a system in a hydrogen plasma and passivating the system with a reactive gaseous phase plasma-deposited silica coating.
Claim 4
Dependent Claim
13 words
A process according to claim 1, wherein the conductive coating is of metal.
Claim 5
Dependent Claim
13 words
A process according to claim 3, wherein the conductive coating is of aluminium.
Claim 6
Dependent Claim
23 words
A process according to claim 1, wherein the conductive coating is of highly doped silicon and is obtained by reactive gaseous phase plasma.
Claim 7
Dependent Claim
20 words
A process according to claim 1, wherein the metal of the coating deposited on the substrate is a nickel-chrome alloy.
Claim 8
Dependent Claim
26 words
A process according to claim 6, wherein the thickness of the nickel-chrome coating is between 500 and 1500 Å and is preferably close to 1000 Å.
Claim 9
Dependent Claim
26 words
A process according to claim 1, wherein the thickness of the silicon coating is between 3000 and 7000 Å and is preferably close to 5000 Å.
Claim 10
Dependent Claim
29 words
A process according to claim 1, wherein the silicon deposition operation takes place at a temperature between 350 ° and 650° C. and preferably at close to 500° C.
Claim 11
Dependent Claim
32 words
A process according to claim 1, wherein the silica coating deposition operation is followed by irradiation of the system with optical radiation in order to bring about a recrystallization of the silicon.
Claim 12
Dependent Claim
29 words
A process according to claim 2, wherein post-hydrogenation is performed in a hydrogen plasma at a temperature between 300° and 500° C. and preferably at close to 400° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-01-16 | 1987-07-18 | 1988-01-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-01-16 | 1991-07-18 | 1992-01-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-01-16 | 1995-07-18 | 1996-01-17 | $7700.00 | Window Closed / Lapsed |