Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
59 words
A plasma apparatus suitable for a plurality of spaced reactive ion etching substrates comprising: a vacuum chamber, means for creating a plasma of ions reactive with said substrates and applying a potential between said plasma and said substrates, and a localized means to generate magnetic fields at and across each of said substrates in spaced relationship to other substrates.
Claim 2
Dependent Claim
59 words
A plasma apparatus suitable for a plurality of spaced reactive ion etching substrates comprising: a vacuum chamber, means for creating a plasma of ions reactive with said substrates and applying a potential between said plasma and said substrates, and a localized means to generate magnetic fields at and across each of said substrates in spaced relationship to other substrates.
Claim 3
Dependent Claim
35 words
The apparatus of claim 1 including an electrode for supporting said substrates in spaced relationship to each other, means electrically insulated from said electrode for raising said substrate relative to the surface of said electrode.
Claim 4
Dependent Claim
46 words
The apparatus of claim 2 wherein said electrode comprises a planar cathode have a plurality of aperatures corresponding to the number of said substrates employed, and having mounted in said aperature said substrate elevating means, with said magnetic field generating means mounted in said elevating means.
Claim 5
Dependent Claim
30 words
The apparatus of claim 3 wherein magnetic field generating means are selected to form at least one of magnetic field lines parallel and vertical to the surfaces of said substrates.
Claim 6
Dependent Claim
33 words
The apparatus of claim 4 wherein the top surface of said cathode is coated with a dielectric, and said elevating means comprises a dielectric substrate support at least in the upper portions thereof.
Claim 7
Dependent Claim
55 words
In a plasma reactor having two opposed parallel electrodes, means on one said electrode for individually supporting substrates in spaced relationship to each other, means for displacing said substrate between and into the space between said electrodes and relative to one of said electrodes, and means for generating individual electric fields at each of substrates.
Claim 8
Dependent Claim
55 words
In a plasma reactor having two opposed parallel electrodes, means on one said electrode for individually supporting substrates in spaced relationship to each other, means for displacing said substrate between and into the space between said electrodes and relative to one of said electrodes, and means for generating individual electric fields at each of substrates.
Claim 9
Independent Claim
67 words
A method for etching substrates in a plasma formed between an anode and a cathode electrodes comprising; Dispersing a plurality of substrates on one of said electrodes, generating individual magnetic fields at and across each of said substrates in spaced relationship to other of other said fields and said substrates, and controllably elevating said substrates relative to said one electrode and the dark space of said plasma.
Claim 10
Independent Claim
67 words
A method for etching substrates in a plasma formed between an anode and a cathode electrodes comprising; Dispersing a plurality of substrates on one of said electrodes, generating individual magnetic fields at and across each of said substrates in spaced relationship to other of other said fields and said substrates, and controllably elevating said substrates relative to said one electrode and the dark space of said plasma.
Claim 11
Dependent Claim
14 words
The method of claim 7 including electrically insulating said substrate from said one electrode.
Claim 12
Dependent Claim
22 words
The method of claim 8 wherein said magnetic field is formed to produce field lines parallel to the surface of said substrates.
Claim 13
Dependent Claim
22 words
The method of claim 8 wherein said magnetic field is formed to produce field lines vertical to the surfaces of said substrates.