US4070264A
Expired / Lapsed
US
⏱️ 0.0 years remaining
R. F. sputtering method and apparatus
Assignee: International Business Machines Corp
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Filing: 1974-06-27
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Granted: 1978-01-24
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Expires: 1994-06-27
Abstract
Abstract Disclosed is R.F. sputtering apparatus for etching the surface of an object, the apparatus comprising a vacuum chamber with the conventional vacuum creating means associated therewith as well as a pump for supplying an ionizable gas into the vacuum chamber. An R.F. power supply is connected to a plate like cathode electrode in the chamber, the plate including a plurality of object supports extending therethrough and including means for holding an object to be etched. A luminescent discharge area, including a Crooks dark space area has a thickness "e" surrounding the plate and the object being etched, the objects being etched being spaced one from the other by a distance "d"≦2"e". The objects being etched are also preferably supported a distance "h" from the cathode (plate) wherein "h"≧2"e" whereby ion bombardment of the cathode electrode during the sputter operation is inhibited. Also disclosed is a method for employing the above described apparatus.
Inventors
- 👤 Michel Loiseau
- 👤 Pierre Charles Pileur
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 10:41
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H01; H01J; H01J37/00; H01J37/32; H01J37/34; H10W20/00; H10W20/40
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
133 words
R. F. sputtering apparatus for etching the surface of an object, said apparatus comprising; a vacuum chamber; means to create a vacuum in said chamber; and means to supply an ionizable gas into said chamber; an R. F. power supply having at least first and second terminals; an electrode in said chamber connected to the first terminal of said supply; said electrode comprising a plate, having at least one object holder extending through said plate, and means on each said holder for holding an object to be etched; said object being supported a distance "h" from said plate wherein "h"≧2 "e", "e" being the thickness of the dark space area adjacent said object to be etched during operation of said apparatus; whereby ion bombardment of said electrode during the sputtering operation is inhibited.
Claim 2
Dependent Claim
133 words
R. F. sputtering apparatus for etching the surface of an object, said apparatus comprising; a vacuum chamber; means to create a vacuum in said chamber; and means to supply an ionizable gas into said chamber; an R. F. power supply having at least first and second terminals; an electrode in said chamber connected to the first terminal of said supply; said electrode comprising a plate, having at least one object holder extending through said plate, and means on each said holder for holding an object to be etched; said object being supported a distance "h" from said plate wherein "h"≧2 "e", "e" being the thickness of the dark space area adjacent said object to be etched during operation of said apparatus; whereby ion bombardment of said electrode during the sputtering operation is inhibited.
Claim 3
Dependent Claim
43 words
Apparatus in accordance with claim 1 including an object support composed of an insulating material superimposed of said object in said holder, and wherein said object support has a pair of parallel surfaces approximately parallel to said electrode and on opposite sides thereof.
Claim 4
Dependent Claim
56 words
Apparatus in accordance with claim 1 including a plurality of object holders extending through said plate for supporting a plurality of objects, said holders positioned relative to one another so that when said objects to be etched are supported by said holder, said objects are spaced one from the other by a distance "d" wherein "d"≦2"e".
Claim 5
Dependent Claim
17 words
Apparatus in accordance with claim 3 including a plurality of apertures in said plate intermediate said holders.
Claim 6
Dependent Claim
33 words
Apparatus in accordance with claim 1 including a plurality of object holders extending through said plate for supporting a plurality of objects, and a plurality of apertures in said plate intermediate said holders.
Claim 7
Dependent Claim
26 words
Apparatus in accordance with claim 1 including a screen circumscribing said plate whereby object holders adjacent the periphery of said plate are inhibited against ion bombardment.
Claim 8
Dependent Claim
26 words
Apparatus in accordance with claim 1 including an evaporation material source in said chamber, and a shutter for masking said material during the sputter etching operation.
Claim 9
Independent Claim
183 words
A method of etching and evaporating material on a semiconductor wafer in R.F. sputtering apparatus, said apparatus comprising a vacuum chamber and means to create an ionizable gas pressure in said chamber, an R.F. power supply having at least first and second terminals, one of the terminals being connected to a cathode electrode in said chamber, said cathode electrode comprising a plate having a plurality of semiconductor wafer supports extending through the plate, and means on the support for holding a semiconductor wafer to be etched; a heated source of material in said chamber and a shutter in said chamber intermediate said cathode electrode and said evaporation material; comprising the steps of: energizing said R.F. power supply and forming a luminescent discharge area including a Crooks dark space area having a thickness "e" spaced from said wafers being etched and supporting said objects a distance "h" from said cathode plate wherein "h"≧2"e"; sputter etching semiconductor wafers in said holders with said shutter masking said evaporation material, and thereafter evaporating said evaporation material on to said sputter etched wafer by unmasking said evaporation source.
Claim 10
Independent Claim
183 words
A method of etching and evaporating material on a semiconductor wafer in R.F. sputtering apparatus, said apparatus comprising a vacuum chamber and means to create an ionizable gas pressure in said chamber, an R.F. power supply having at least first and second terminals, one of the terminals being connected to a cathode electrode in said chamber, said cathode electrode comprising a plate having a plurality of semiconductor wafer supports extending through the plate, and means on the support for holding a semiconductor wafer to be etched; a heated source of material in said chamber and a shutter in said chamber intermediate said cathode electrode and said evaporation material; comprising the steps of: energizing said R.F. power supply and forming a luminescent discharge area including a Crooks dark space area having a thickness "e" spaced from said wafers being etched and supporting said objects a distance "h" from said cathode plate wherein "h"≧2"e"; sputter etching semiconductor wafers in said holders with said shutter masking said evaporation material, and thereafter evaporating said evaporation material on to said sputter etched wafer by unmasking said evaporation source.
Claim 11
Dependent Claim
49 words
A process in accordance with claim 8 including chemically etching said semiconductor wafer prior to said sputter etching step to remove at least some parts of the surface of said semiconductor wafer, and thereafter sputter etching to remove additional material from said previously chemically etched portion of said wafer.
Claim 12
Independent Claim
182 words
A method of etching and evaporating material on an object in R. F. sputtering apparatus, said apparatus comprising a vacuum chamber and means to create an ionizable gas pressure in said chamber, an R. F. power supply having at least first and second terminals, one of the terminals being connected to a cathode electrode in said chamber, said cathode electrode comprising a plate having a plurality of object holders extending through the plate, and means on the holder for holding an object to be etched; a heated source of material in said chamber and a shutter in said chamber intermediate said cathode electrode and said evaporation material; comprising the steps of: energizing said R. F. power supply and forming a luminescent discharge area including a Crooks dark space area having a thickness "e" spaced from said wafers being etched and supporting said objects a distance "h" from said cathode plate wherein "h"≧2"e"; sputter etching objects in said holders with said shutter masking said evaporation material, and thereafter evaporating said evaporation material on to said sputter etched object by unmasking said evaporation source.
Claim 13
Independent Claim
182 words
A method of etching and evaporating material on an object in R. F. sputtering apparatus, said apparatus comprising a vacuum chamber and means to create an ionizable gas pressure in said chamber, an R. F. power supply having at least first and second terminals, one of the terminals being connected to a cathode electrode in said chamber, said cathode electrode comprising a plate having a plurality of object holders extending through the plate, and means on the holder for holding an object to be etched; a heated source of material in said chamber and a shutter in said chamber intermediate said cathode electrode and said evaporation material; comprising the steps of: energizing said R. F. power supply and forming a luminescent discharge area including a Crooks dark space area having a thickness "e" spaced from said wafers being etched and supporting said objects a distance "h" from said cathode plate wherein "h"≧2"e"; sputter etching objects in said holders with said shutter masking said evaporation material, and thereafter evaporating said evaporation material on to said sputter etched object by unmasking said evaporation source.
Claim 14
Dependent Claim
47 words
A process in accordance with claim 10 including chemically etching said object prior to said sputter etching step to remove at least some parts of the surface of said object, and thereafter sputter etching to remove additional material from said previously chemically etched portion of said object.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-01-23 | 1981-07-25 | 1982-01-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-01-23 | 1985-07-25 | 1986-01-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-01-23 | 1989-07-25 | 1990-01-24 | $7700.00 | Window Closed / Lapsed |