Sputtering apparatus for forming ohmic contacts for semiconductor devices

Claim 1

A sputtering apparatus for sequentially depositing a plurality of thin films upon the surface of semiconductor substrates, comprising in combination: a. chamber means having inlet and outlet means for providing a confined zone of low pressure; b. support means rotatably mounted in said chamber means for supporting said substrates so that at least a downwardly facing surface thereof is exposed; c. at least two cathodes mounted in said chamber means below said support means; d. a plurality of spaced electrodes mounted in said chamber means below said support means and above said cathode for producing a glow discharge of charged ions between said support means and each cathode; e. voltage means for sequentially applying a voltage to each of said cathodes so as to selectively charge each cathode and cause said charged ions to strike each cathode with sufficient energy to cause upward sputtering thereof and deposition of a thin film of material upon the exposed surfaces of said substrates; and f. means for rotating said support means and for thereby transporting said substrates to a sequence of positions necessary to receive a uniform sputtered deposit from each cathode.