Patent US4421577A successfully refreshed from Google Patents.
US4421577A
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US
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Method for making Schottky barrier diodes with engineered heights
Assignee: Leland Stanford Junior University
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Filing: 1980-11-10
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Granted: 1983-12-20
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Expires: 2000-11-10
Abstract
Abstract Schottky barrier diodes with engineered barrier heights in III-V semiconductor material are disclosed. By fabricating the diodes using a very clean and defect free surface, the barrier height can be controlled by introducing selected amounts of dopant in the surface prior to evaporation of a contact metal. By selecting a dopant having the same conductivity as the semiconductor material a reliable ohmic contact can be provided.
Inventors
- 👤 William E. Spicer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 17:37
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10D64/012; H10D64/0124; Y; Y10; Y10S; Y10S148/00; Y10S148/084
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
84 words
A method of fabricating a semiconductor device including group III elements and group V elements of the periodic table and having a metal contact thereon comprising the steps of: (1) forming a semiconductor body including a first dopant of a first conductivity type and having a clean surface with minimal defects, (2) introducing a second dopant into said surface, (3) exposing said surface to an atmosphere including the group V element of the semiconductor body, and (4) providing a metal contact on said surface.
Claim 2
Independent Claim
84 words
A method of fabricating a semiconductor device including group III elements and group V elements of the periodic table and having a metal contact thereon comprising the steps of: (1) forming a semiconductor body including a first dopant of a first conductivity type and having a clean surface with minimal defects, (2) introducing a second dopant into said surface, (3) exposing said surface to an atmosphere including the group V element of the semiconductor body, and (4) providing a metal contact on said surface.
Claim 3
Dependent Claim
16 words
The method as defined in claim 1 wherein said metal contact includes a Group III element.
Claim 4
Independent Claim
73 words
The method of fabricating a III-V semiconductor Schottky diode comprising the steps of: (1) providing a III-V semiconductor body including a dopant of a first conductivity type and having a clean surface with minimal defects, (2) introducing a second dopant of opposite conductivity type into said surface, (3) exposing said surface to an atmosphere including the group V element of the III-V semiconductor body, and (4) providing a metal contact on said surface.
Claim 5
Independent Claim
73 words
The method of fabricating a III-V semiconductor Schottky diode comprising the steps of: (1) providing a III-V semiconductor body including a dopant of a first conductivity type and having a clean surface with minimal defects, (2) introducing a second dopant of opposite conductivity type into said surface, (3) exposing said surface to an atmosphere including the group V element of the III-V semiconductor body, and (4) providing a metal contact on said surface.
Claim 6
Dependent Claim
16 words
The method as defined by claim 3 wherein said metal contact includes a Group III element.
Claim 7
Independent Claim
75 words
The method of fabricating an ohmic contact on a III-V semiconductor device comprising the steps of (1) providing a III-V semiconductor body including a dopant of a first conductivity type and having a clean surface with minimal defects, (2) introducing a second dopant of the same conductivity type into said surface, exposing said surface to an atmosphere including the group V element of said III-V semiconductor body, and providing a metal contact on said surface.
Claim 8
Independent Claim
75 words
The method of fabricating an ohmic contact on a III-V semiconductor device comprising the steps of (1) providing a III-V semiconductor body including a dopant of a first conductivity type and having a clean surface with minimal defects, (2) introducing a second dopant of the same conductivity type into said surface, exposing said surface to an atmosphere including the group V element of said III-V semiconductor body, and providing a metal contact on said surface.
Claim 9
Dependent Claim
16 words
The method as defined by claim 5 wherein said metal contact includes a Group III element.
References Cited (Backward Citations)
US4045248A
Cited
US4211587A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-12-19 | 1987-06-20 | 1987-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-12-19 | 1991-06-20 | 1991-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-12-19 | 1995-06-20 | 1995-12-20 | $7700.00 | Window Closed / Lapsed |