US4418469A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of simultaneously forming buried resistors and bipolar transistors by ion implantation
Assignee: Panasonic Holdings Corp
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Filing: 1982-02-17
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Granted: 1983-12-06
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Expires: 2002-02-17
Abstract
Abstract A method of making at a relatively low temperature, a resistor region of a high sheet resistance, solely or together with other circuit devices such as bipolar transistors in an IC chip, with the step of forming a buried resistor layer inside a semiconductor substrate at a predetermined depth by an ion implantation, wherein the resultant resistor region has a well-controlled high sheet resistance and the obtained bipolar transistors have a well-improved high frequency characteristics.
Inventors
- 👤 Tsutomu Fujita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:23
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/43; H10P; H10P30/00; H10P30/20; H10P30/21; H10D84/00; H10D84/01; H10D84/0112; H10D84/02; H10D84/03; H10D84/038; H10D84/60; H10D84/611; H10D84/613; H10D84/615; H10P30/202; H10P30/204; H10P30/212; H10P30/28
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
237 words
A method of making semiconductor integrated circuit devices comprising, in combination, the successive steps of: (A) forming a first and a second island regions of a first conductivity type, (B) forming an emitter region of said first conductivity type selectively in said first island region, (C) forming an active base region of a second conductivity type opposite to said first conductivity type under said emitter region, and a buried resistor layer of said second conductivity type in said second island region, said active base region and said buried resistor layer being formed simultaneously by an ion implantation with a first kind of ions of said second conductivity type from the surfaces of said first and said second island regions, (D) forming a mask for subsequent ion implantation selectively on said buried resistor layer except on contact regions to be formed in said second island region, and thereafter (E) forming non-active base regions so as to be in contact with said active base region, and said contact regions so as to be in contact with said resistor layer, said non-active base regions and said contact regions being formed simultaneously by another ion implantation with a second kind of ions of said second conductivity type and with a lower energy and a higher dose amount than the case of said ion implantation with said first kind of ions, from the surfaces of said first and said second island regions.
Claim 2
Independent Claim
237 words
A method of making semiconductor integrated circuit devices comprising, in combination, the successive steps of: (A) forming a first and a second island regions of a first conductivity type, (B) forming an emitter region of said first conductivity type selectively in said first island region, (C) forming an active base region of a second conductivity type opposite to said first conductivity type under said emitter region, and a buried resistor layer of said second conductivity type in said second island region, said active base region and said buried resistor layer being formed simultaneously by an ion implantation with a first kind of ions of said second conductivity type from the surfaces of said first and said second island regions, (D) forming a mask for subsequent ion implantation selectively on said buried resistor layer except on contact regions to be formed in said second island region, and thereafter (E) forming non-active base regions so as to be in contact with said active base region, and said contact regions so as to be in contact with said resistor layer, said non-active base regions and said contact regions being formed simultaneously by another ion implantation with a second kind of ions of said second conductivity type and with a lower energy and a higher dose amount than the case of said ion implantation with said first kind of ions, from the surfaces of said first and said second island regions.
Claim 3
Independent Claim
225 words
A method of making semiconductor integrated circuit devices comprising, in combination, the successive steps of: (a) forming a first and a second island regions of a first conductivity type, (b) forming an emitter region of said first conductivity type selectively in said first island region, (c) forming a mask on said second island region except on contact regions for a buried resistor layer to be formed in said second island region, (d) forming non-active base regions in said first island region, and contact regions in said second island region simultaneously by an ion implantation with a first kind of ions of a second conductivity type opposite to said first conductivity type, from the surfaces of said first and said second island regions, (e) removing said mask, and thereafter (f) forming an active base region under said emitter region so as to be in contact with said non-active base regions, and said buried resistor layer so as to be in contact with said contact regions, said active base region and said buried resistor layer being formed simultaneously by another ion implantation with a second kind of ions of said second conductivity type and with a higher energy and a lower dose amount than the case of said ion implantation with said first kind of ions, from the surfaces of said first and said second island regions.
Claim 4
Independent Claim
225 words
A method of making semiconductor integrated circuit devices comprising, in combination, the successive steps of: (a) forming a first and a second island regions of a first conductivity type, (b) forming an emitter region of said first conductivity type selectively in said first island region, (c) forming a mask on said second island region except on contact regions for a buried resistor layer to be formed in said second island region, (d) forming non-active base regions in said first island region, and contact regions in said second island region simultaneously by an ion implantation with a first kind of ions of a second conductivity type opposite to said first conductivity type, from the surfaces of said first and said second island regions, (e) removing said mask, and thereafter (f) forming an active base region under said emitter region so as to be in contact with said non-active base regions, and said buried resistor layer so as to be in contact with said contact regions, said active base region and said buried resistor layer being formed simultaneously by another ion implantation with a second kind of ions of said second conductivity type and with a higher energy and a lower dose amount than the case of said ion implantation with said first kind of ions, from the surfaces of said first and said second island regions.
Claim 5
Dependent Claim
51 words
The method in accordance with claim 1 or 2, wherein prior to the formation of said buried resistor layer an insulation film is formed on the surfaces of said first and said second island regions, and said ion implantation with said first kind of ions is made through said insulation film.
Claim 6
Dependent Claim
33 words
The method in accordance with claim 3, wherein said emitter region is formed by forming a poly-crystalline semiconductor layer and diffusing impurity atoms from said poly-crystalline semiconductor layer into said first island region.
Claim 7
Dependent Claim
45 words
The method in accordance with claim 4, wherein said ion implantation with said first kind of ions is made through said insulation film, said poly-crystalline semiconductor layer and said emitter region, so that said active base region has a thin depth range of 0.15-0.3 μm.
Claim 8
Dependent Claim
20 words
The method in accordance with claim 1 or 2, wherein said mask for said contact regions is a photoresist film.
Claim 9
Dependent Claim
27 words
The method in accordance with claim 1 or 2, wherein said non-active base regions are formed by use of said emitter region as an ion implantation mask.
Claim 10
Dependent Claim
64 words
The method in accordance with claim 1 or 2, wherein said emitter region is formed by the steps of (i) forming an impurity layer of said first conductivity type on the surfaces of said first and said second island regions, (ii) disposing an emitter pattern mask on said impurity layer, and (iii) selectively removing said impurity layer by use of said emitter pattern mask.
Claim 11
Dependent Claim
35 words
The method in accordance with claim 1 or 2, wherein said emitter region is formed by forming a poly-crystalline semiconductor layer and diffusing impurity atoms from said poly-crystalline semiconductor layer into said first island region.
Claim 12
Dependent Claim
21 words
The method in accordance with claim 1 or 2, wherein said emitter region is formed by a selective impurity diffusion method.
Claim 13
Dependent Claim
17 words
The method in accordance with claim 1 or 2, wherein arsenic is used for an emitter impurity.
Claim 14
Dependent Claim
29 words
The method in accordance with claim 1 or 2, wherein boron is used for an impurity in the formation of said active base region and said buried resistor layer.
Claim 15
Dependent Claim
39 words
The method in accordance with claim 1 or 2, wherein said buried resistor layer is formed in such a manner that implanted atoms for the formation of said buried resistor layer are buried completely inside said second island region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-12-05 | 1987-06-06 | 1987-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-12-05 | 1991-06-06 | 1991-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-12-05 | 1995-06-06 | 1995-12-06 | $7700.00 | Window Closed / Lapsed |