US4414558A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Hetero-junction light-emitting diode
Assignee: Zaidan Hojin Handotai Kenkyu Shinkokai
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Filing: 1981-02-09
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Granted: 1983-11-08
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Expires: 2001-02-09
Abstract
Abstract The emission efficiency of a hetero-junction light-emitting diode is improved by raising the carrier concentration in the radiative region, and by increasing the thickness of the radiative region. On p + type GaAs substrate, a p type Ga 1-x Al x As (0.30<×<0.37) layer and an n type Ga 1-y Al y As (0.40<y<0.70) layer are grown. The emission efficiency are optimized when 4.5×10.sup.17 cm.sup.-3 <p<2.5×10.sup.18 cm.sup.-3 2×10.sup.17 cm.sup.-3 <n<1×10.sup.18 cm.sup.-3 and the thickness of the p type layer is at least about 5 μm.
Inventors
- 👤 Jun-ichi Nishizawa
- 👤 Toru Teshima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 09:36
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/8215; H10H20/811; H10H20/822; H10H20/824
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
192 words
A hetero-junction light emitting diode for emitting light through a predetermined surface thereof comprising: a p-type GaAs substrate having a first carrier concentration p 1 ; a relatively low band-gap p-type semiconductor region disposed on said substrate, said p-type region being composed of Ga 1-x Al x As (0.3<x<0.37), and having a second carrier concentration p 2 , where: p 2 <p 1 , and 4.5×10 17 cm -3 <p 2 <2.5×10 18 cm -3 ; and a relatively high band-gap n-type semiconductor region disposed on said p-type region adjacent to said predetermined diode surface, said n-type region being composed of Ga 1-y Al y As (y>x), and having a carrier concentration n, where n is less than the carrier concentration p 2 of said p-type region, and 2×10 17 cm -3 <n<1×10 18 cm -3 , said n-type region forming a pn hetero-junction with said p-type region having a face generally parallel to said diode predetermined surface; said substrate, and n-type and p-type regions being disposed such that light rays derived in said diode are in a direction perpendicular to said face of said hetero-junction for emission through said predetermined surface.
Claim 2
Dependent Claim
192 words
A hetero-junction light emitting diode for emitting light through a predetermined surface thereof comprising: a p-type GaAs substrate having a first carrier concentration p 1 ; a relatively low band-gap p-type semiconductor region disposed on said substrate, said p-type region being composed of Ga 1-x Al x As (0.3<x<0.37), and having a second carrier concentration p 2 , where: p 2 <p 1 , and 4.5×10 17 cm -3 <p 2 <2.5×10 18 cm -3 ; and a relatively high band-gap n-type semiconductor region disposed on said p-type region adjacent to said predetermined diode surface, said n-type region being composed of Ga 1-y Al y As (y>x), and having a carrier concentration n, where n is less than the carrier concentration p 2 of said p-type region, and 2×10 17 cm -3 <n<1×10 18 cm -3 , said n-type region forming a pn hetero-junction with said p-type region having a face generally parallel to said diode predetermined surface; said substrate, and n-type and p-type regions being disposed such that light rays derived in said diode are in a direction perpendicular to said face of said hetero-junction for emission through said predetermined surface.
Claim 3
Dependent Claim
27 words
The hetero-junction light-emitting diode according to claim 1, wherein: said carrier concentration p 1 of the p type region is determined mainly by zinc impurity doped therein.
Claim 4
Dependent Claim
22 words
The hetero-junction light-emitting diode according to claim 1, wherein: said p type region has a thickness of at least about 5 μm.
Claim 5
Dependent Claim
22 words
The hetero-junction light-emitting diode according to claim 1, wherein: said p type region has a thickness of at least about 10 μm.
Claim 6
Dependent Claim
22 words
The hetero-junction light-emitting diode according to claim 1, wherein: said p type region has a thickness of at least about 17 μm.
Claim 7
Dependent Claim
52 words
The hetero-junction light-emitting diode according to claim 1, further comprising: another p type region having substantially a same composition as that of said p type region and a carrier concentration p + and disposed between said substrate and said p type region, the carrier concentration p + satisfying the condition p.sup.+ ≳2.7×p.sub.2.
Claim 8
Dependent Claim
27 words
The hetero-junction light-emitting diode according to claim 1 or 6, wherein: the variation of said composition x, Δx throughout said p type region satisfies the condition Δx<0.01.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1986-11-07 | 1987-05-09 | 1987-11-08 | $2000.00 | Window Closed / Lapsed |
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