Charge transfer circuits with dark current compensation

Claim 2

In a charge coupled device (CCD) delay line which includes a semiconductor substrate, electrodes insulated from the substrate to which multiple phase voltages are applied for creating potential wells in the substrate for the storage and propagation of signal charge packets along the length of the delay line, and in which dark current charges are produced which add to the charge packets as they are being propagated along the delay line, a system for reducing the effect of the dark current charge comprising: means coupled to said CCD delay line for subtracting from each signal charge packet, after it has accumulated a fixed amount of dark current charge, not greater than a relatively small fraction of the capacity of one of said potential wells, said fixed amount of charge and for disposing of the subtracted charge, said means comprising: M second CCD's coupled to said delay line, where M is an integer equal to at least 1, each such second CCD being located at a point along said CCD delay line at which a charge packet arrives after it has accumulated said fixed amount of dark current charge, each such second CCD comprising: means including two electrodes coupled to a common voltage source and with a fixed offset voltage between them for creating a potential well in said substrate; means for propagating each charge packet reaching said second CCD to said potential well; means for returning all except said fixed amount of said charge in said well to said CCD delay line; a drain; and means for shifting said fixed amount of charge to said drain.

Claim 3

In a CCD as set forth in claim 1, further including: means for sensing said fixed amount of dark current charge picked up by a charge packet; and means responsive to said sensing means for controlling the amount of charge subtracted from each charge packet by said means for subtracting.

Claim 4

In a charge coupled device (CCD) delay line which includes a semiconductor substrate, electrodes insulated from the substrate to which multiple phase voltages are applied for creating potential wells in the substrate for the storage and propagation of charge packets along the length of the delay line, and in which dark currents are produced which add to the charge packets as they are being propagated along the delay line, a system for reducing the effect of the dark current comprising: means for introducing into said delay line a reference charge packet followed by a plurality of signal charge packets; means for producing a first voltage indicative of the reference charge packet amplitude and a second voltage indicative of the reference charge packet amplitude after it has undergone X shifts and has increased in amplitude by virtue of the dark current charge it has picked up during said X shifts, where X is an integer sufficiently large that the dark current is at least a fraction of a percent of the capacity of a potential well; means for comparing said first and second voltages and for producing and storing a third voltage indicative of the difference in amplitudes between said first and second voltages; and means responsive to said third voltage for subtracting from each charge packet, after said X shifts thereof, an amount of charge substantially equal to the background charge it has accumulated during said X shifts.

Claim 5

In a charge coupled device (CCD) delay line which includes a semiconductor substrate, electrodes insulated from the substrate to which multiple phase voltages are applied for creating potential wells in the substrate for the storage and propagation of charge packets along the length of the delay line, and in which dark currents are produced which add to the charge packets as they are being propagated along the delay line, a system for reducing the effect of the dark current comprising: means for introducing into said delay line a reference charge packet followed by a plurality of signal charge packets; means for producing a first voltage indicative of the reference charge packet amplitude and a second voltage indicative of the reference charge packet amplitude after it has undergone X shifts and has increased in amplitude by virtue of the dark current charge it has picked up during said X shifts, where X is an integer sufficiently large that the dark current is at least a fraction of a percent of the capacity of a potential well; means for comparing said first and second voltages and for producing and storing a third voltage indicative of the difference in amplitudes between said first and second voltages; and means responsive to said third voltage for subtracting from each charge packet, after said X shifts thereof, an amount of charge substantially equal to the background charge it has accumulated during said X shifts.

Claim 6

In a charge coupled device (CCD) delay line which includes a semiconductor substrate, electrodes insulated from the substrate to which multiple phase voltages are applied for creating potential wells in the substrate for the storage and propagation of signal charge packets along the length of the delay line, and in which dark current charges are produced which add to the charge packets as they are being propagated along the delay line, a system for reducing the effect of the dark current charge comprising: means coupled to said CCD delay line for subtracting from each signal charge packet, after it has accumulated a fixed amount of dark current charge, not greater than about one tenth of the capacity of one of said potential wells, said fixed amount of charge and for disposing of the subtracted charge, said means M second CCD's coupled to said delay line, where M is an integer equal to at least 1, each such second CCD being located at a point along said CCD delay line at which a charge packet arrives after it has accumulated said fixed amount of dark current charges, each such second CCD comprising: means for creating a potential well in said substrate; means for propagating each charge packet reaching said second CCD to said potential well; means for returning all except said fixed amount of said charge in said well to said CCD delay line; a drain; means for shifting said fixed amount of charge to said drain; means for sensing said fixed amount of dark current charge picked up by a charge packet; means responsive to said sensing means for controlling the amount of charge subtracted from each charge packet by said means for subtracting; means for introducing into said CCD delay line, for each group of N serially charge packet, a reference charge packet, where N is an integer which is such that the reference charge packet will accumulate said fixed amount of dark current during the period it is being shifted in the delay line between successive introductions of said reference charge packet; and wherein said means for sensing comprises means for comparing the amplitude of a reference charge packet with that of a second reference charge packet which has been shifted along said CCD delay line for said period of time, for producing an output proportional to the difference between the two.

Claim 7

In a charge coupled device (CCD) delay line which includes a semiconductor substrate, electrodes insulated from the substrate to which multiple phase voltages are applied for creating potential wells in the substrate for the storage and propagation of signal charge packets along the length of the delay line, and in which dark current charges are produced which add to the charge packets as they are being propagated along the delay line, a system for reducing the effect of the dark current charge comprising: means coupled to said CCD delay line for subtracting from each signal charge packet, after it has accumulated a fixed amount of dark current charge, not greater than about one tenth of the capacity of one of said potential wells, said fixed amount of charge and for disposing of the subtracted charge, said means M second CCD's coupled to said delay line, where M is an integer equal to at least 1, each such second CCD being located at a point along said CCD delay line at which a charge packet arrives after it has accumulated said fixed amount of dark current charges, each such second CCD comprising: means for creating a potential well in said substrate; means for propagating each charge packet reaching said second CCD to said potential well; means for returning all except said fixed amount of said charge in said well to said CCD delay line; a drain; means for shifting said fixed amount of charge to said drain; means for sensing said fixed amount of dark current charge picked up by a charge packet; means responsive to said sensing means for controlling the amount of charge subtracted from each charge packet by said means for subtracting; means for introducing into said CCD delay line, for each group of N serially charge packet, a reference charge packet, where N is an integer which is such that the reference charge packet will accumulate said fixed amount of dark current during the period it is being shifted in the delay line between successive introductions of said reference charge packet; and wherein said means for sensing comprises means for comparing the amplitude of a reference charge packet with that of a second reference charge packet which has been shifted along said CCD delay line for said period of time, for producing an output proportional to the difference between the two.

Claim 8

In a charge coupled device (CCD) delay line which includes a semiconductor substrate, electrodes insulated from the substrate to which multiple phase voltages are applied for creating potential wells in the substrate for the storage and propagation of charge packets along the length of the delay line, and in which dark currents are produced which add to the charge packets as they are being propagated along the delay line, a system for reducing the effect of the dark current comprising: means for introducing into said delay line a plurality of signal charge packets for propagation along said delay line; means for producing and storing a first voltage indicative of the amplitude of at least one of said charge packets at a reference time and a second voltage indicative of the amplitude of said at least one charge packet at a second time after it has undergone X shifts and has increased in amplitude by virtue of the dark current charge it has picked up during the period between said reference and said second times, where X is an integer equal to at least 50 and where said period is sufficiently large that the dark current is at least a fraction of a percent of the capacity of a potential well; means for comparing said first and second voltages and for producing and storing a third voltage indicative of the difference in amplitudes between said first and second voltages; means responsive to said third voltage for subtracting from at least certain of said charge packets, after each said X shifts thereof, an amount of charge substantially equal to the background charge each has accumulated, during said X shifts, and wherein: said CCD delay line comprises a closed loop, said means for producing and storing a second voltage comprising means for integrating all of the charge packets in said loop during one circulation through the loop, and said means for producing and storing a second voltage comprising means for integrating all of the charge packets in said loop during at least a following circulation through the loop.

Claim 9

In a charge coupled device (CCD) delay line which includes a semiconductor substrate, electrodes insulated from the substrate to which multiple phase voltages are applied for creating potential wells in the substrate for the storage and propagation of charge packets along the length of the delay line, and in which dark currents are produced which add to the charge packets as they are being propagated along the delay line, a system for reducing the effect of the dark current comprising: means for introducing into said delay line a plurality of signal charge packets for propagation along said delay line; means for producing and storing a first voltage indicative of the amplitude of at least one of said charge packets at a reference time and a second voltage indicative of the amplitude of said at least one charge packet at a second time after it has undergone X shifts and has increased in amplitude by virtue of the dark current charge it has picked up during the period between said reference and said second times, where X is an integer equal to at least 50 and where said period is sufficiently large that the dark current is at least a fraction of a percent of the capacity of a potential well; means for comparing said first and second voltages and for producing and storing a third voltage indicative of the difference in amplitudes between said first and second voltages; means responsive to said third voltage for subtracting from at least certain of said charge packets, after each said X shifts thereof, an amount of charge substantially equal to the background charge each has accumulated, during said X shifts, and wherein: said CCD delay line comprises a closed loop, said means for producing and storing a second voltage comprising means for integrating all of the charge packets in said loop during one circulation through the loop, and said means for producing and storing a second voltage comprising means for integrating all of the charge packets in said loop during at least a following circulation through the loop.

Claim 10

In a charge coupled device (CCD) delay line which includes a semiconductor substrate, electrodes insulated from the substrate to which multiple phase voltages are applied for creating potential wells in the substrate for the storage and propagation of charge packets along the length of the delay line, and in which dark currents are produced which add to the charge packets as they are being propagated along the delay line, a system for reducing the effect of the dark current comprising: means for introducing into said delay line a plurality of signal charge packets for propagation along said delay line; means for producing and storing a first voltage indicative of the amplitude of at least one of said charge packets at a reference time and a second voltage indicative of the amplitude of said at least one charge packet at a second time after it has undergone X shifts and has increased in amplitude by virtue of the dark current charge it has picked up during the period between said reference and said second times, where X is an integer equal to at least 50 and where said period is sufficiently large that the dark current is at least a fraction of a percent of the capacity of a potential well; means for comparing said first and second voltages and for producing and storing a third voltage indicative of the difference in amplitudes between said first and second voltages; means responsive to said third voltage for subtracting from at least certain of said charge packets; after each said X shifts thereof, an amount of charge substantially equal to the background charge each has accumulated during said X shifts, and wherein: said charge packets are arranged in groups, each such group representing a signal and said means for subtracting comprises means for subtracting an amount of charge substantially equal to the background charge from only one charge packet in each group of said charge packets.

Claim 11

In a charge coupled device (CCD) delay line which includes a semiconductor substrate, electrodes insulated from the substrate to which multiple phase voltages are applied for creating potential wells in the substrate for the storage and propagation of charge packets along the length of the delay line, and in which dark currents are produced which add to the charge packets as they are being propagated along the delay line, a system for reducing the effect of the dark current comprising: means for introducing into said delay line a plurality of signal charge packets for propagation along said delay line; means for producing and storing a first voltage indicative of the amplitude of at least one of said charge packets at a reference time and a second voltage indicative of the amplitude of said at least one charge packet at a second time after it has undergone X shifts and has increased in amplitude by virtue of the dark current charge it has picked up during the period between said reference and said second times, where X is an integer equal to at least 50 and where said period is sufficiently large that the dark current is at least a fraction of a percent of the capacity of a potential well; means for comparing said first and second voltages and for producing and storing a third voltage indicative of the difference in amplitudes between said first and second voltages; means responsive to said third voltage for subtracting from at least certain of said charge packets; after each said X shifts thereof, an amount of charge substantially equal to the background charge each has accumulated during said X shifts, and wherein: said charge packets are arranged in groups, each such group representing a signal and said means for subtracting comprises means for subtracting an amount of charge substantially equal to the background charge from only one charge packet in each group of said charge packets.

Claim 12

In a CCD delay line as set forth in claim 6, each group of charge packets comprising a signal charge packet followed by a fat zero charge packet, the fat zero charge packets being of uniform size, and wherein said means for subtracting comprises means for subtracting from the fat zero charge packet in each group.