EEPROM With bulk zero program capability

Claim 2

An electrically erasable programmable read only memory (EEPROM) comprising: an array of memory elements arranged with one of said memory elements at the intersection of each of a plurality of row lines and column lines of said array, said memory elements characterized as assuming relatively high threshold voltage states in response to a selectively applied voltage having a first predetermined polarity, and a relatively low threshold voltage state in response to a selectively applied voltage having a second predetermined polarity; and circuit means for applying, in response to an array program input signal, to all of the memory elements in said array a voltage having said second predetermined polarity; whereby all of said memory elements assume the relatively low threshold voltage state.

Claim 3

The EEPROM of claim 1 wherein said memory elements assume the relatively low threshold state in response to a predetermined potential difference of said second predetermined polarity developed between first and second portions thereof, the EEPROM further comprising: supply means for receiving first and second signals having the predetermined potential difference therebetween; and application means for applying said first signal to said first portion of each of the memory elements and for applying said second signal to said second portion of each of the memory elements in response to said array program input signal; whereby said predetermined potential difference is developed between said first and second portions of each of the memory elements.

Claim 4

The EEPROM of claim 2 wherein the application means comprises: an erase line; logic means for generating, in response to the array program input signal, a row control signal and a column control signal at a first logic state; column select means for coupling the first signal to each of the column lines and for coupling the second signal to said erase lines when the column control signal is at the first logic state; and row select means for coupling said first portion of each memory element to a respective column line and for coupling said second portion of each memory element to said erase line when the row control signal is at the first logic state; p1 whereby the first signal is coupled to the first portion of each of the memory cells via the column lines and the second signal is coupled to the second portion of each of the memory cells via said erase line.

Claim 5

The EEPROM of claim 3 wherein the column select means comprises: a plurality of column address buffer means, each column address buffer means providing two buffered column address signals, one true and one complementary, of an individual column address signal when the column control signal is at a second logic state, and providing both buffered column address signals at a predetermined logic state when the column control signal is at said first logic state; and column decoder means for coupling said first signal to each of the columns of said array and for coupling the second signal said erase line in response to all of the buffered column address signals of the plurality of column address means being at said predetermined logic state.

Claim 6

The EEPROM of claim 4 wherein the row select means comprises: a plurality of row address buffer means, each row address buffer means providing two buffered row address signals, one true and one complementary, of an individual row address signal when the row control signal is at a second logic state, and providing both buffered row address signals at said predetermined logic state when the row control signal is at said first logic state; and row decoder means for coupling said first portion of each memory element to a respective column and for coupling said second portion of each memory element to said erase line in response to all of the row address signals of the plurality of row address means being at said predetermined logic state.

Claim 7

In an electrically erasable programmable read only memory having an array of memory elements arranged with one of said memory elements at the intersection of each of a plurality of row lines and column lines of said array, said memory elements characterized as assuming relatively high threshold voltage states in response to a selectively applied voltage having a first predetermined polarity, and a relatively low threshold voltage state in response to a selectively applied voltage having a second predetermined polarity; a method comprising the step of: simultaneously applying to all of the memory elements of the array, alternately, the voltage having said first predetermined polarity and the voltage having said second predetermined polarity.

Claim 8

In an electrically erasable programmable read only memory having an array of memory elements arranged with one of said memory elements at the intersection of each of a plurality of row lines and column lines of said array, said memory elements characterized as assuming relatively high threshold voltage states in response to a selectively applied voltage having a first predetermined polarity, and a relatively low threshold voltage state in response to a selectively applied voltage having a second predetermined polarity; a method comprising the step of: simultaneously applying to all of the memory elements of the array, alternately, the voltage having said first predetermined polarity and the voltage having said second predetermined polarity.