Method for forming a pattern in a thin-film transistor having tellurium semiconductor layer

Claim 1

A method for making a patterned tellurium semiconductor layer, comprising the steps of: depositing a tellurium semiconductor layer on a substrate; forming a photoresist layer, selected portions of said photoresist layer being soluble upon exposure to actinic radiation in an aqueous basic developing and etching solution consisting essentially of an effective amount of compounds selected from the group consisting of inorganic hydroxides, silicates, phosphates, organic bases, monobasic strong bases, water soluble basic amines, water soluble alcohols and mixtures thereof; soft baking the substrate having both the tellurium and photoresist layer thereon; exposing selected portions of the photoresist to actinic radiation to form a pattern in the photoresist; contacting the thus exposed device with said aqueous basic developing and etching solution to selectively remove the exposed portions of said photoresist and to selectively etch the corresponding portions of said tellurium semiconductor layer; washing the resultant device; and contacting the remaining resist layer with an organic solvent to remove the remaining resist layer.

Claim 2

A method for making a patterned tellurium semiconductor layer, comprising the steps of: depositing a tellurium semiconductor layer on a substrate; forming a photoresist layer, selected portions of said photoresist layer being soluble upon exposure to actinic radiation in an aqueous basic developing and etching solution consisting essentially of an effective amount of compounds selected from the group consisting of inorganic hydroxides, silicates, phosphates, organic bases, monobasic strong bases, water soluble basic amines, water soluble alcohols and mixtures thereof; soft baking the substrate having both the tellurium and photoresist layer thereon; exposing selected portions of the photoresist to actinic radiation to form a pattern in the photoresist; contacting the thus exposed device with said aqueous basic developing and etching solution to selectively remove the exposed portions of said photoresist and to selectively etch the corresponding portions of said tellurium semiconductor layer; washing the resultant device; and contacting the remaining resist layer with an organic solvent to remove the remaining resist layer.

Claim 10

A method for making a thin-film transistor, comprising the steps of: forming a source electrode, a drain electrode, a gate electrode and a tellurium semiconductor layer, wherein the tellurium semiconductor layer is made by a process consisting essentially of the following steps: depositing a tellurium semiconductor layer on a substrate; forming a photoresist layer, selected portions of said photoresist layer being soluble upon exposure to ultraviolet light in an aqueous basic developing and etching solution consisting essentially of an effective amount of compounds selected from the group consisting of inorganic hydroxides, silicates, phosphates, organic bases, monobasic strong bases, water soluble basic amines, water soluble alcohols and mixtures thereof; soft baking the substrate having both the tellurium and photoresist layer thereon; exposing selected portions of the photoresist to ultraviolet light to form a pattern in the photoresist; contacting the thus exposed device with said aqueous basic developing and etching solution to selectively remove the exposed portions of said photoresist and to selectively etch the corresponding portions of said tellurium semiconductor layer; washing the resultant device; and contacting the remaining resist layer with an organic solvent to remove the remaining resist layer.

Claim 11

A method for making a thin-film transistor, comprising the steps of: forming a source electrode, a drain electrode, a gate electrode and a tellurium semiconductor layer, wherein the tellurium semiconductor layer is made by a process consisting essentially of the following steps: depositing a tellurium semiconductor layer on a substrate; forming a photoresist layer, selected portions of said photoresist layer being soluble upon exposure to ultraviolet light in an aqueous basic developing and etching solution consisting essentially of an effective amount of compounds selected from the group consisting of inorganic hydroxides, silicates, phosphates, organic bases, monobasic strong bases, water soluble basic amines, water soluble alcohols and mixtures thereof; soft baking the substrate having both the tellurium and photoresist layer thereon; exposing selected portions of the photoresist to ultraviolet light to form a pattern in the photoresist; contacting the thus exposed device with said aqueous basic developing and etching solution to selectively remove the exposed portions of said photoresist and to selectively etch the corresponding portions of said tellurium semiconductor layer; washing the resultant device; and contacting the remaining resist layer with an organic solvent to remove the remaining resist layer.

Claim 26

A method for making a patterned tellurium semiconductor layer, comprising the steps of: depositing a tellurium semiconductor layer on a substrate by vacuum evaporation; forming a photoresist layer, selected portions of said photoresist layer being soluble upon exposure to actinic radiation in an aqueous basic developing and etching solution consisting essentially of an effective amount of compounds selected from the group consisting of inorganic hydroxides, silicates, phosphates, organic bases, monobasic strong bases, water soluble basic amines, water soluble alcohols and mixtures thereof; soft baking the substrate having both the tellurium and photoresist layer thereon; exposing selected portions of the photoresist to ultraviolet light to form a pattern in the photoresist; contacting the thus exposed device with said aqueous basic developing and etching solution for 30 to 400 seconds to selectively remove the exposed portions of said photoresist and to selectively etch the corresponding portions of said tellurium semiconductor layer; washing the resultant device with water; and contacting the remaining resist layer with an organic solvent to remove the remaining resist layer.

Claim 27

A method for making a patterned tellurium semiconductor layer, comprising the steps of: depositing a tellurium semiconductor layer on a substrate by vacuum evaporation; forming a photoresist layer, selected portions of said photoresist layer being soluble upon exposure to actinic radiation in an aqueous basic developing and etching solution consisting essentially of an effective amount of compounds selected from the group consisting of inorganic hydroxides, silicates, phosphates, organic bases, monobasic strong bases, water soluble basic amines, water soluble alcohols and mixtures thereof; soft baking the substrate having both the tellurium and photoresist layer thereon; exposing selected portions of the photoresist to ultraviolet light to form a pattern in the photoresist; contacting the thus exposed device with said aqueous basic developing and etching solution for 30 to 400 seconds to selectively remove the exposed portions of said photoresist and to selectively etch the corresponding portions of said tellurium semiconductor layer; washing the resultant device with water; and contacting the remaining resist layer with an organic solvent to remove the remaining resist layer.

Claim 28

A method for making a thin-film transistor, comprising the steps of: forming a source electrode, a drain electrode, a gate electrode and a tellurium semiconductor layer, wherein the tellurium semiconductor layer is made by a process consisting essentially of the following steps: depositing a tellurium semiconductor layer on a substrate by vacuum evaporation; forming a photoresist layer, selected portions of said photoresist layer being soluble upon exposure to actinic radiation in an aqueous basic developing and etching solution consisting essentially of an effective amount of compounds selected from the group consisting of inorganic hydroxides, silicates, phosphates, organic bases, monobasic strong bases, water soluble basic amines, water soluble alcohols and mixtures thereof; soft baking the substrate having both the tellurium and photoresist layer thereon; exposing selected portions of the photoresist to ultraviolet light to form a pattern in the photoresist; contacting the thus exposed device for 30 to 400 seconds with said aqueous basic developing and etching solution to selectively remove the exposed portions of said photoresist and to selectively etch the corresponding portions of said tellurium semiconductor layer; washing the resultant device with water; and contacting the remaining resist layer with an organic solvent to remove the remaining resist layer.

Claim 29

A method for making a thin-film transistor, comprising the steps of: forming a source electrode, a drain electrode, a gate electrode and a tellurium semiconductor layer, wherein the tellurium semiconductor layer is made by a process consisting essentially of the following steps: depositing a tellurium semiconductor layer on a substrate by vacuum evaporation; forming a photoresist layer, selected portions of said photoresist layer being soluble upon exposure to actinic radiation in an aqueous basic developing and etching solution consisting essentially of an effective amount of compounds selected from the group consisting of inorganic hydroxides, silicates, phosphates, organic bases, monobasic strong bases, water soluble basic amines, water soluble alcohols and mixtures thereof; soft baking the substrate having both the tellurium and photoresist layer thereon; exposing selected portions of the photoresist to ultraviolet light to form a pattern in the photoresist; contacting the thus exposed device for 30 to 400 seconds with said aqueous basic developing and etching solution to selectively remove the exposed portions of said photoresist and to selectively etch the corresponding portions of said tellurium semiconductor layer; washing the resultant device with water; and contacting the remaining resist layer with an organic solvent to remove the remaining resist layer.