US4409722A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Borderless diffusion contact process and structure
Assignee: International Business Machines Corp
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Filing: 1980-08-29
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Granted: 1983-10-18
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Expires: 2000-08-29
Abstract
Abstract Electrical contacts to diffused regions in a semiconductor substrate are made by a process which reduces the space needed in memory or logic cell layouts. The contacts are made such that they overlap, but are insulated from, adjacent conductors. The contacts are formed in a manner which avoids shorting of the diffused junctions to adjacent structures without being limited by lithographic overlay tolerances.
Inventors
- 👤 Robert C. Dockerty
- 👤 Paul L. Garbarino
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 21:40
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; H10B; H10B12/00; H10B12/01; H10P; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/981
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
159 words
A method of making an electrical contact to a semiconductor device which is formed on a silicon substrate comprising the steps of: providing as part of said device a gate structure including an insulating layer and a gate electrode of doped polycrystalline silicon; forming in the formation of two parallel gates an opening through said insulating layer and gate electrode to said substrate in the area designated to be a self-aligned diffused region; subjecting said device to a thermal oxidation which results in a thicker silicon dioxide layer on said gate electrodes than on the surface of said substrate where said contact is to be made; etching said silicon dioxide layer from said surface while etching only a portion of said thicker silicon dioxide layer; and forming an electrical contact layer of conductive material on said surface and over said thicker silicon dioxide layer wherein said electrical contact layer is above at least a portion of said gate electrode.
Claim 2
Independent Claim
159 words
A method of making an electrical contact to a semiconductor device which is formed on a silicon substrate comprising the steps of: providing as part of said device a gate structure including an insulating layer and a gate electrode of doped polycrystalline silicon; forming in the formation of two parallel gates an opening through said insulating layer and gate electrode to said substrate in the area designated to be a self-aligned diffused region; subjecting said device to a thermal oxidation which results in a thicker silicon dioxide layer on said gate electrodes than on the surface of said substrate where said contact is to be made; etching said silicon dioxide layer from said surface while etching only a portion of said thicker silicon dioxide layer; and forming an electrical contact layer of conductive material on said surface and over said thicker silicon dioxide layer wherein said electrical contact layer is above at least a portion of said gate electrode.
Claim 3
Dependent Claim
37 words
The process of claim 1 including the steps of: forming an insulating layer on said layer of conductive material; and forming contacts through said insulating layer to said gate electrode and to said layer of conductive material.
Claim 4
Dependent Claim
21 words
The process of claim 1 wherein said insulating layer is silicon dioxide and said electrical contact layer is doped polycrystalline silicon.
Claim 5
Dependent Claim
48 words
The process of claim 3 wherein said substrate is P type silicon and including the steps of doping the polycrystalline silicon of said contact layer with phosphorus and then annealing to diffuse phosphorus into said substrate to from an N+ region in said substrate adjacent to said gate.
Claim 6
Dependent Claim
26 words
The process of claim 1 wherein the contact is to a region formed by either ion implantation or diffusion after said etching said silicon dioxide layer.
Claim 7
Dependent Claim
32 words
The process of claim 1 wherein the contact is to a region formed by ion implantation before said etching said silicon dioxide layer and said conductive material is metal or doped polysilicon.
Claim 8
Dependent Claim
31 words
The method of claim 1 wherein said silicon substrate is P- type, said gate electrode of polycrystalline silicon is N type, and said etching is done by directional reactive ion etching.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-10-17 | 1987-04-18 | 1987-10-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-10-17 | 1991-04-18 | 1991-10-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-10-17 | 1995-04-18 | 1995-10-18 | $7700.00 | Window Closed / Lapsed |