Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
152 words
In a programmable logic array comprising an array of input and output lines and a plurality of product term lines intersecting said input lines and said output lines, and MOS devices having gate and drain terminals formed at selected intersections of said product term lines and said input lines and said output lines, said product term lines being connected to the drains of said MOS devices on said input lines and to the gates of said MOS devices on said output lines, said MOS devices being provided in the form of dual-device structures, each of which comprises a pair of doped silicon source regions, an intermediate doped silicon drain region, and a pair of spaced polysilicon terminals overlying and extending beyond said source and drain regions, said input lines and said output lines and their associated MOS devices being arranged in a direction orthogonal to the direction of said product term lines.
Claim 2
Dependent Claim
152 words
In a programmable logic array comprising an array of input and output lines and a plurality of product term lines intersecting said input lines and said output lines, and MOS devices having gate and drain terminals formed at selected intersections of said product term lines and said input lines and said output lines, said product term lines being connected to the drains of said MOS devices on said input lines and to the gates of said MOS devices on said output lines, said MOS devices being provided in the form of dual-device structures, each of which comprises a pair of doped silicon source regions, an intermediate doped silicon drain region, and a pair of spaced polysilicon terminals overlying and extending beyond said source and drain regions, said input lines and said output lines and their associated MOS devices being arranged in a direction orthogonal to the direction of said product term lines.
Claim 3
Dependent Claim
37 words
The logic array of claim 1, in which said input lines are arranged in adjacent complementary logic pairs and separated from a second pair of adjacent complementary input lines by at least one of said output lines.
Claim 4
Dependent Claim
64 words
In combination with the array of claim 2, a clocked register having a plurality of bits, the outputs of each of said bits being directly connected to one of said complementary pair of input lines, and the input of each of said bits being directly connected to one of said output lines of the array arranged adjacent to said complementary pair of input lines.
Claim 5
Dependent Claim
49 words
The programmable logic array of claim 1, in which each of said gate terminals includes a pair of end portions and an outwardly bowed central portion, the central portions of said gate terminals of each associated pair of MOS devices surrounding a contact made to a common drain region.
Claim 6
Dependent Claim
144 words
A programmable logic array comprising an array of input and output lines and a plurality of product term lines intersecting said input lines and said output lines, and MOS devices having gate and drain terminals formed at selected intersections of said product term lines and said input lines and said output lines, said product term lines being connected to the drains of said MOS devices on said input lines and to the gates of said MOS devices on said output lines, said MOS devices being in the form of dual-device structures each of which comprises a pair of doped silicon source regions, an intermediate doped silicon drain region, a pair of spaced polysilicon gate terminals overlying and extending beyond said source and drain regions and having closely spaced parallel end portions and outwardly spaced central portions surrounding a contact made to said drain region.
Claim 7
Dependent Claim
144 words
A programmable logic array comprising an array of input and output lines and a plurality of product term lines intersecting said input lines and said output lines, and MOS devices having gate and drain terminals formed at selected intersections of said product term lines and said input lines and said output lines, said product term lines being connected to the drains of said MOS devices on said input lines and to the gates of said MOS devices on said output lines, said MOS devices being in the form of dual-device structures each of which comprises a pair of doped silicon source regions, an intermediate doped silicon drain region, a pair of spaced polysilicon gate terminals overlying and extending beyond said source and drain regions and having closely spaced parallel end portions and outwardly spaced central portions surrounding a contact made to said drain region.
Claim 8
Dependent Claim
68 words
A dual MOS device comprising a pair of doped silicon source regions and an intermediate common doped silicon drain region formed in a common substrate, a pair of spaced polysilicon gate terminals overlying and extending beyond said source and drain regions and having closely spaced parallel end portions and outwardly bowed spaced central portions surrounding a contact made to said common drain region positioned intermediate said gate terminals.
Claim 9
Dependent Claim
68 words
A dual MOS device comprising a pair of doped silicon source regions and an intermediate common doped silicon drain region formed in a common substrate, a pair of spaced polysilicon gate terminals overlying and extending beyond said source and drain regions and having closely spaced parallel end portions and outwardly bowed spaced central portions surrounding a contact made to said common drain region positioned intermediate said gate terminals.