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US4406765A
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Apparatus and process for production of amorphous semiconductor
Assignee: Fujifilm Holdings Corp
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Filing: 1980-12-16
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Granted: 1983-09-27
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Expires: 2000-12-16
Abstract
Abstract A process for producing an amorphous semiconductor membrane. A predetermined gas is introduced into a vacuum chamber which is decomposed by a discharge phenomenon. The discharge phenomenon is caused by an electric field made up of a high frequency electric field or pulsed electric field superposed on a DC electric field.
Inventors
- 👤 Akio Higashi
- 👤 Kazuhiro Kawaziri
- 👤 Jin Murayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 06:00
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/515; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
92 words
A process for producing an amorphous semiconductor comprising the steps of: introducing a predetermined gas into a vacuum chamber and causing a discharge phenomenon by applying an electric field to decompose said gas, said electric field comprising a DC electric field superposed on one of a high frequency electric field and a pulsed electric field having a pulse width in a range of from about 10 -10 sec. to about 10 -3 sec. and a pulse cycle time in the ranges of from about 10 -9 sec. to about 10 -1 sec.
Claim 2
Dependent Claim
92 words
A process for producing an amorphous semiconductor comprising the steps of: introducing a predetermined gas into a vacuum chamber and causing a discharge phenomenon by applying an electric field to decompose said gas, said electric field comprising a DC electric field superposed on one of a high frequency electric field and a pulsed electric field having a pulse width in a range of from about 10 -10 sec. to about 10 -3 sec. and a pulse cycle time in the ranges of from about 10 -9 sec. to about 10 -1 sec.
Claim 3
Dependent Claim
27 words
The process of claim 1 further comprising the step of maintaining a vacuum in said chamber within a pressure range of 10 -2 torr to 10 torr.
Claim 4
Dependent Claim
24 words
The process of claim 1 wherein said electric field comprises a high frequency electric field having a frequency of 0.1 MHz to 100 MHz.
Claim 5
Dependent Claim
28 words
The process of claim 1 wherein said DC electric field is produced in response to a DC voltage in a range of from 0.1 KV to 5 KV.
Claim 6
Dependent Claim
41 words
The process of claim 1 wherein said predetermined gas comprises a gas selected from the group consisting of silane, silane compound, mixture of silane and an inert gas and further includes as a component one of C, N, O, and F.
Claim 7
Dependent Claim
14 words
The process of claim 5 wherein said predetermined gas further comprises a dopant gas.
Claim 8
Dependent Claim
26 words
The process of claim 6 wherein said dopant gas comprises a gas selected from the group consisting of PH 3 and B 2 H 6 .
Claim 9
Dependent Claim
14 words
The process of claim 7 wherein said predetermined gas further comprises GeH 4 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-09-26 | 1987-03-28 | 1987-09-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-09-26 | 1991-03-28 | 1991-09-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-09-26 | 1995-03-28 | 1995-09-27 | $7700.00 | Window Closed / Lapsed |