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Patent US4406053A successfully refreshed from Google Patents.
US4406053A
Expired / Lapsed
US
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Process for manufacturing a semiconductor device having a non-porous passivation layer
Assignee: Fujitsu Ltd
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Filing: 1981-07-31
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Granted: 1983-09-27
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Expires: 2001-07-31
Abstract
Abstract A process for manufacturing a semiconductor device comprises the step of annealing a porous passivation layer which is deposited on the surface of the device and which covers metallization layers fabricated thereon, by irradiating a laser beam on the passivation layer so as to densify the passivation layer, while the laser beam scans the surface of the passivation layer.
Inventors
- 👤 Kanetake Takasaki
- 👤 Yoshimi Shioya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:21
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/65; H10P14/6516; H10P14/6536; H10P14/6542; H10P14/6922; H10P14/6923; H10P14/694; H10P14/6943; H10P14/69433; H10P34/00; H10P34/40; H10P34/42; H10P95/00; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6334; H10P14/6336; Y; Y10; Y10S; Y10S438/00; Y10S438/958
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
78 words
A process for manufacturing a semiconductor device having a non-porous passivation layer formed as an insulator on metallization layers by plasma chemical vapor deposition, comprising the step of annealing the passivation layer which is deposited on the surface of said semiconductor device and which covers the metallization layers fabricated thereon, by irradiating a laser beam on the passivation layer so as to densify the passivation layer, and scanning said laser beam across the surface of the passivation layer.
Claim 2
Dependent Claim
78 words
A process for manufacturing a semiconductor device having a non-porous passivation layer formed as an insulator on metallization layers by plasma chemical vapor deposition, comprising the step of annealing the passivation layer which is deposited on the surface of said semiconductor device and which covers the metallization layers fabricated thereon, by irradiating a laser beam on the passivation layer so as to densify the passivation layer, and scanning said laser beam across the surface of the passivation layer.
Claim 3
Dependent Claim
26 words
A process according to claim 1, wherein said irradiating step comprises generating a laser beam which is one of a continuous beam and a pulsed beam.
Claim 4
Dependent Claim
25 words
A process according to claim 2, wherein said irradiating step comprises generating the laser beam by using a YAG, ruby, argon or carbon dioxide laser.
Claim 5
Dependent Claim
24 words
A process according to claim 1, further comprising the step of forming the passivation layer from silicon nitride, silicon oxide or phosphorus silicate glass.
Claim 6
Dependent Claim
17 words
A process according to claim 1, further comprising the step of forming the metallization layers from aluminum.
Claim 7
Dependent Claim
29 words
A process according to claim 5, wherein said step of forming the metallization layers comprises forming the metallization layers from aluminum containing a small amount of silicon or copper.
Claim 8
Dependent Claim
49 words
A process for manufacturing a semiconductor device having a non-porous passivation layer formed on a metallization layer by plasma chemical vapor deposition, comprising the step of irradiating the passivation layer by scanning a laser beam across the surface of the passivation layer, so that the passivation layer is densified.
Claim 9
Dependent Claim
49 words
A process for manufacturing a semiconductor device having a non-porous passivation layer formed on a metallization layer by plasma chemical vapor deposition, comprising the step of irradiating the passivation layer by scanning a laser beam across the surface of the passivation layer, so that the passivation layer is densified.
Claim 10
Dependent Claim
23 words
A process according to claim 7, wherein the scanning step comprises scanning the laser beam at the rate of four inches per second.
Claim 11
Dependent Claim
25 words
A process according to claim 8, wherein the irradiating step comprises instantaneously heating the scanned portion of the porous passivation layer to substantially 600° C.
References Cited (Backward Citations)
US3725309A
Cited
US3881971A
Cited
US4059461A
Cited
US4229232A
Cited
US4321104A
Cited
DE2943153A1
Cited
US4284659A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-09-26 | 1987-03-28 | 1987-09-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-09-26 | 1991-03-28 | 1991-09-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-09-26 | 1995-03-28 | 1995-09-27 | $7700.00 | Window Closed / Lapsed |