US4405708A
Expired / Lapsed
US
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Method of applying a resist pattern on a substrate, and resist material mixture
Assignee: US Philips Corp
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Filing: 1982-03-08
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Granted: 1983-09-20
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Expires: 2002-03-08
Abstract
Abstract A method of applying a resist pattern on a substrate and resist material mixture. Resist materials which are applied in accordance with a specific resist pattern are employed in the production of integrated circuits. It has been found that the addition of a certain type of negative-working resist material, namely polystyrene and polystyrene derivatives, to positive-working resist materials results in a resist material mixture having an increased resistance to plasma etching.
Inventors
- 👤 Pieter van Pelt
- 👤 Jacob Wijdenes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 11:55
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/039; G03F7/09; G03F7/095; Y; Y10; Y10S; Y10S430/00; Y10S430/1053; Y10S430/1055; Y10S430/106; Y10S430/108
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
102 words
A method of forming a resist pattern on a substrate wherein a resist material is uniformly applied to the surface of said substrate to form a photosensitive layer thereupon, the resultant layer of resist material is selectively irradiated with actinic radiation and the irradiated portion of said layer is then removed, characterized in that the resist material is a mixture of a positive-working methylmethacrylate polymer or polymethylisopropenyl ketone and 1-25% by weight of a negative-working styrene homopolymer of the formula: ##STR2## wherein R 1 is hydrogen or alkyl, R 2 is halogen, alkyl or alkoxy and n represents the degree of polymerization.
Claim 2
Independent Claim
102 words
A method of forming a resist pattern on a substrate wherein a resist material is uniformly applied to the surface of said substrate to form a photosensitive layer thereupon, the resultant layer of resist material is selectively irradiated with actinic radiation and the irradiated portion of said layer is then removed, characterized in that the resist material is a mixture of a positive-working methylmethacrylate polymer or polymethylisopropenyl ketone and 1-25% by weight of a negative-working styrene homopolymer of the formula: ##STR2## wherein R 1 is hydrogen or alkyl, R 2 is halogen, alkyl or alkoxy and n represents the degree of polymerization.
Claim 3
Dependent Claim
11 words
The method of claim 1, wherein the styrene homopolymer is poly(p-tert.butyl)styrene.
Claim 4
Dependent Claim
45 words
A resist material mixture comprising a positive-working methylmethacrylate polymer or polymethylisopropenyl and 1-25% by weight of a negative-working styrene homopolymer of the formula: ##STR3## wherein R 1 is hydrogen or alkyl, R 2 is halogen, alkyl or alkoxy and n represents the degree of polymerization.
Claim 5
Dependent Claim
45 words
A resist material mixture comprising a positive-working methylmethacrylate polymer or polymethylisopropenyl and 1-25% by weight of a negative-working styrene homopolymer of the formula: ##STR3## wherein R 1 is hydrogen or alkyl, R 2 is halogen, alkyl or alkoxy and n represents the degree of polymerization.
Claim 6
Dependent Claim
24 words
A resist material mixture as claimed in claim 3, characterized in that the material comprises 1-25% by weight of poly(p-tert.butyl)styrene as the styrene homopolymer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-09-19 | 1987-03-21 | 1987-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-09-19 | 1991-03-21 | 1991-09-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-09-19 | 1995-03-21 | 1995-09-20 | $7700.00 | Window Closed / Lapsed |