US4404731A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a thin film transistor
Assignee: Xerox Corp
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Filing: 1981-10-01
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Granted: 1983-09-20
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Expires: 2001-10-01
Abstract
Abstract In the formation of a thin film device, integrity of the semiconductor-insulator and semiconductor-conductor interfaces is preserved by depositing layers of insulator, semiconductor, and conductor in successive sequence under continuous vacuum. In a preferred embodiment, the method minimizes contamination exposure of the critical interfaces between semiconductor and gate insulator and semiconductor and source-drain contacts of a thin film transistor.
Inventors
- 👤 Michael Poleshuk
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 11:10
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/021; H10D86/0231; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/675; H10D64/00; H10D64/01; H10D64/011; H10D86/40; H10D86/60; Y; Y10; Y10S; Y10S148/00; Y10S148/063; Y10S148/10; Y10S148/105; Y10S148/169; Y10S438/00; Y10S438/913; Y10S438/98
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
225 words
An improved method of forming a thin film transistor on a substrate of the type having a gate electrode of a conductive material formed on a portion of a surface of the substrate and extending to the edge of the substrate to provide means for contact therewith, wherein the improved method comprises the steps of: (a) forming a first insulator layer covering the gate electrode and the remaining portion of the surface of the substrate on which said electrode is formed, the end of the gate electrode at the substrate edge not being covered to permit contact therewith; (b) forming on said first insulator layer, a masking layer having a predetermined opening therein exposing a portion of said first insulator layer; (c) sequentially depositing, under vacuum, a second insulator layer, a semiconductor layer, and a conductive contact layer on said masking layer and on the exposed portion of said first insulator layer; (d) removing said masking layer and the portions of the second insulator layer, the semiconductor layer, and the conductive contact layer deposited thereon; (e) selectively forming a third conductor layer to define source and drain contacts to said semiconductor layer, said third conductor layer having a predetermined opening therein exposing a portion of said conductive contact layer; and (f) removing the exposed portion of said conductive contact layer to expose said semiconductor layer.
Claim 2
Dependent Claim
225 words
An improved method of forming a thin film transistor on a substrate of the type having a gate electrode of a conductive material formed on a portion of a surface of the substrate and extending to the edge of the substrate to provide means for contact therewith, wherein the improved method comprises the steps of: (a) forming a first insulator layer covering the gate electrode and the remaining portion of the surface of the substrate on which said electrode is formed, the end of the gate electrode at the substrate edge not being covered to permit contact therewith; (b) forming on said first insulator layer, a masking layer having a predetermined opening therein exposing a portion of said first insulator layer; (c) sequentially depositing, under vacuum, a second insulator layer, a semiconductor layer, and a conductive contact layer on said masking layer and on the exposed portion of said first insulator layer; (d) removing said masking layer and the portions of the second insulator layer, the semiconductor layer, and the conductive contact layer deposited thereon; (e) selectively forming a third conductor layer to define source and drain contacts to said semiconductor layer, said third conductor layer having a predetermined opening therein exposing a portion of said conductive contact layer; and (f) removing the exposed portion of said conductive contact layer to expose said semiconductor layer.
Claim 3
Dependent Claim
22 words
The method of claim 1, wherein said step (f) comprises removing the exposed portions of said conductive contact layer by dry etching.
Claim 4
Dependent Claim
12 words
The method of claim 2 wherein said dry etching comprises plasma etching.
Claim 5
Dependent Claim
13 words
The method of claim 2 wherein said dry etching comprises ion beam milling.
Claim 6
Independent Claim
106 words
A method of forming an active region of a thin film transistor on a substrate having a gate electrode deposited thereon which extends to the edge of the substrate to provide means for contact therewith, the method comprising depositing thin film layers of an insulator, a semiconductor, and a conductive metal upon a portion of the gate electrode and a surface portion of the substrate adjacent the gate electrode portion in successive sequence under continuous vacuum, said surface portion of the substrate and gate electrode portion being exposed by a predetermined opening in a mask to define and delineate the exact transistor dimensions by said opening.
Claim 7
Independent Claim
106 words
A method of forming an active region of a thin film transistor on a substrate having a gate electrode deposited thereon which extends to the edge of the substrate to provide means for contact therewith, the method comprising depositing thin film layers of an insulator, a semiconductor, and a conductive metal upon a portion of the gate electrode and a surface portion of the substrate adjacent the gate electrode portion in successive sequence under continuous vacuum, said surface portion of the substrate and gate electrode portion being exposed by a predetermined opening in a mask to define and delineate the exact transistor dimensions by said opening.
Claim 8
Dependent Claim
48 words
The method of claim 5, wherein said mask comprises a photoresist mask formed by removing a portion of a photoresist masking layer deposited upon said substrate to expose the surface portion of said substrate, gate electrode portion, and side wall surfaces of the opening in said photoresist mask.
Claim 9
Dependent Claim
93 words
The method of claim 6, further including: (a) removing said photoresist mask and the portions of the insulator, semiconductor, and conductive metal deposited thereon; (b) selectively forming a second conductor layer to define separate source and drain contacts to said semiconductor, said source and drain contacts having a space therebetween to expose a portion of the conductive metal; and (c) removing the exposed portion of the conductive metal to expose the semiconductor so that separate remaining portions of the conductive metal lie between the semiconductor and portions of the source and drain contacts.
Claim 10
Dependent Claim
42 words
The method of claim 6, further including the step of depositing a thin film of insulating material on the side wall surfaces of the opening in said photoresist mask prior to the step of depositing said layers of insulator, semiconductor, and metal.
Claim 11
Dependent Claim
35 words
The method of claim 6, wherein a thin film of insulating material is deposited on the side wall surfaces of the opening in said photoresist mask concurrently with the deposition of said layer of insulator.
Claim 12
Independent Claim
203 words
A method of forming a thin film transistor on a substrate having a gate electrode of a conductive metal on a portion of a surface of the substrate, the gate electrode having an extension leading to one edge of the substrate to provide means for contact therewith after a transistor is formed thereover, the method comprising the steps of: (a) forming a masking layer covering the surface of said substrate having the gate electrode, said masking layer having a predetermined opening therein exposing said gate electrode and a portion of the surface of said substrate adjacent said electrode; (b) sequentially depositing, under vacuum, an insulator layer, a semiconductor layer, and a conductive contact layer on said masking layer and on the gate electrode and exposed portion of the surface of said substrate; (c) removing said masking layer and the portions of the insulator layer, semiconductor layer, and the conductive contact layer deposited thereon; (d) selectively forming a third conductor layer to define source and drain contacts to said semiconductor layer, said third conductor layer having a predetermined opening therein exposing a portion of said conductive contact layer; and (e) removing the exposed portion of said conductive contact layer to expose said semiconductor layer.
Claim 13
Independent Claim
203 words
A method of forming a thin film transistor on a substrate having a gate electrode of a conductive metal on a portion of a surface of the substrate, the gate electrode having an extension leading to one edge of the substrate to provide means for contact therewith after a transistor is formed thereover, the method comprising the steps of: (a) forming a masking layer covering the surface of said substrate having the gate electrode, said masking layer having a predetermined opening therein exposing said gate electrode and a portion of the surface of said substrate adjacent said electrode; (b) sequentially depositing, under vacuum, an insulator layer, a semiconductor layer, and a conductive contact layer on said masking layer and on the gate electrode and exposed portion of the surface of said substrate; (c) removing said masking layer and the portions of the insulator layer, semiconductor layer, and the conductive contact layer deposited thereon; (d) selectively forming a third conductor layer to define source and drain contacts to said semiconductor layer, said third conductor layer having a predetermined opening therein exposing a portion of said conductive contact layer; and (e) removing the exposed portion of said conductive contact layer to expose said semiconductor layer.
Claim 14
Dependent Claim
22 words
The method of claim 10, wherein said step (e) comprises removing the exposed portions of said conductive contact layer by dry etching.
Claim 15
Dependent Claim
12 words
The method of claim 11 wherein said dry etching comprises plasma etching.
Claim 16
Dependent Claim
13 words
The method of claim 11 wherein said dry etching comprises ion beam milling.
Claim 17
Independent Claim
241 words
A method of forming an array of thin film transistors on a substrate having a predetermined pattern of gate electrodes of conductive material formed on a surface of the substrate, the gate electrodes having extensions which connect to at least one bus bar of conductive material formed on the substrate surface which extends to the edge of the substrate whereat means for contact is provided for the bus bar, the method comprising the steps of: (a) forming a first insulator layer covering the gate electrodes, gate electrode extensions, bus bar and selected remaining portions of the surface of the substrate on which said electrodes, extensions and bus bar are formed; (b) forming on said first insulator layer a masking layer having predetermined pattern of openings therein exposing portions of said first insulator layer; (c) sequentially depositing, under vacuum, a second insulator layer, a semiconductor layer, and a conductive contact layer on said masking layer and on the exposed portions of said first insulator layer; (d) removing said masking layer and the portions of the second insulator layer, the semiconductor layer, and the conductive contact layer deposited thereon; (e) selectively forming a third conductor layer to define source and drain contacts to said semiconductor layer, said third conductor layer having a predetermined pattern of openings therein exposing portions of said conductive contact layer; and (f) removing the exposed portions of said conductive contact layer to expose said semiconductor layer by dry etching.
Claim 18
Independent Claim
241 words
A method of forming an array of thin film transistors on a substrate having a predetermined pattern of gate electrodes of conductive material formed on a surface of the substrate, the gate electrodes having extensions which connect to at least one bus bar of conductive material formed on the substrate surface which extends to the edge of the substrate whereat means for contact is provided for the bus bar, the method comprising the steps of: (a) forming a first insulator layer covering the gate electrodes, gate electrode extensions, bus bar and selected remaining portions of the surface of the substrate on which said electrodes, extensions and bus bar are formed; (b) forming on said first insulator layer a masking layer having predetermined pattern of openings therein exposing portions of said first insulator layer; (c) sequentially depositing, under vacuum, a second insulator layer, a semiconductor layer, and a conductive contact layer on said masking layer and on the exposed portions of said first insulator layer; (d) removing said masking layer and the portions of the second insulator layer, the semiconductor layer, and the conductive contact layer deposited thereon; (e) selectively forming a third conductor layer to define source and drain contacts to said semiconductor layer, said third conductor layer having a predetermined pattern of openings therein exposing portions of said conductive contact layer; and (f) removing the exposed portions of said conductive contact layer to expose said semiconductor layer by dry etching.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-09-19 | 1987-03-21 | 1987-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-09-19 | 1991-03-21 | 1991-09-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-09-19 | 1995-03-21 | 1995-09-20 | $7700.00 | Window Closed / Lapsed |