US4404236A
Expired / Lapsed
US
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High pressure chemical vapor deposition
Assignee: Suwa Seikosha KK
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Filing: 1981-10-23
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Granted: 1983-09-13
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Expires: 2001-10-23
Abstract
Abstract A process for carrying out chemical vapor deposition under increased pressure is provided. By carrying out chemical vapor deposition under increased pressure, a boundry layer of reduced thickness is formed which permit formation of a chemical vapor reaction film in the minute necking portions on the surface of the substrate formed during formation of the electrical components, such as a transistor or an integrated circuit. The step of chemical vapor deposition under increased pressure may be followed by chemical vapor deposition at normal or reduced pressure for forming a film of uniform thickness across the wafer.
Inventors
- 👤 Shoichi Komatsu
- 👤 Seiichi Iwamatsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:21
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4584; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; C30; C30B; C30B33/00; C30B33/005
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
43 words
In a process of chemical vapor deposition wherein a thin SiO 2 film is formed on a substrate by chemical reaction of a vapor, the improvement which comprises carrying out the chemical vapor deposition at a pressure greater than at least 2 atmospheres.
Claim 2
Dependent Claim
43 words
In a process of chemical vapor deposition wherein a thin SiO 2 film is formed on a substrate by chemical reaction of a vapor, the improvement which comprises carrying out the chemical vapor deposition at a pressure greater than at least 2 atmospheres.
Claim 3
Dependent Claim
19 words
The chemical vapor deposition process of claim 1, wherein the pressure is maintained between about 2 and 10 atmospheres.
Claim 4
Dependent Claim
19 words
The chemical deposition process of claim 2, further including maintaining the temperature between about 150° C. and 800° C.
Claim 5
Dependent Claim
16 words
The chemical vapor process of claim 3, wherein the temperature is maintained at about 400° C.
Claim 6
Dependent Claim
39 words
The chemical vapor deposition process of claim 1, for forming a SiO 2 film on a Si wafer substrate, wherein the gas comprises about 1 atmosphere SiH 4 , 1 atmosphere O 2 and 8 atmospheres N 2 .
Claim 7
Dependent Claim
17 words
The chemical vapor deposition process of claim 5, wherein the temperature is maintained at about 400° C.
Claim 8
Dependent Claim
50 words
In a process of chemical vapor deposition for forming a Si 3 N 4 film on a Si wafer substrate the improvement which comprises carrying out the chemical vapor deposition with a gas comprising about 1 atmosphere SiH 4 , 1 atmosphere NH 4 and 8 atmospheres N 2 .
Claim 9
Dependent Claim
50 words
In a process of chemical vapor deposition for forming a Si 3 N 4 film on a Si wafer substrate the improvement which comprises carrying out the chemical vapor deposition with a gas comprising about 1 atmosphere SiH 4 , 1 atmosphere NH 4 and 8 atmospheres N 2 .
Claim 10
Dependent Claim
17 words
The chemical vapor deposition process of claim 7, wherein the temperature is maintained at about 400° C.
Claim 11
Dependent Claim
26 words
The chemical vapor deposition process of claim 1, further including the additional step of forming a further chemical vapor deposition film at atmospheric or reduced pressures.
Claim 12
Dependent Claim
53 words
A chemical vapor deposition process comprising: forming a thin boundary layer of one of SiO 2 or Si 3 N 4 on the surface of a substrate by subjecting the substrate to a vopor reaction at pressures between about 2 and 10 atmospheres at elevated temperatures between about 150° and 800° C.; and
Claim 13
Dependent Claim
53 words
A chemical vapor deposition process comprising: forming a thin boundary layer of one of SiO 2 or Si 3 N 4 on the surface of a substrate by subjecting the substrate to a vopor reaction at pressures between about 2 and 10 atmospheres at elevated temperatures between about 150° and 800° C.; and
Claim 14
Dependent Claim
26 words
forming a further film on the thin boundary layer by chemical vapor deposition at normal or reduced pressures for forming a uniform film on the substrate.
Claim 15
Dependent Claim
26 words
forming a further film on the thin boundary layer by chemical vapor deposition at normal or reduced pressures for forming a uniform film on the substrate.
Claim 16
Dependent Claim
15 words
The chemical vapor deposition process of claim 10, wherein the substrate is a silicon wafer.
Claim 17
Dependent Claim
33 words
The chemical vapor deposition process of claim 5, further including the additional step of forming a further chemical vapor deposition film on the thin film of SiO 2 at atmospheric or reduced pressures.
Claim 18
Dependent Claim
35 words
The chemical vapor deposition process of claim 7, further including the additional step of forming a further chemical vapor deposition film on the thin film of Si 3 N 4 at atmospheric or reduced pressures.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-09-12 | 1987-03-14 | 1987-09-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-09-12 | 1991-03-14 | 1991-09-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-09-12 | 1995-03-14 | 1995-09-13 | $7700.00 | Window Closed / Lapsed |