US3843398A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Catalytic process for depositing nitride films
Assignee: Individual
•
Filing: 1972-06-13
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Granted: 1974-10-22
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Expires: 1992-06-13
Abstract
Abstract 1. IN SEMICONDUCTOR DEVICE FABRICATION A METHOD FOR PRODUCING NITRIDE FILMS OF A GIVEN SEMICONDUCTOR MATERIAL, COMPRISING THE STEPS OF: (A) PROVIDING A COMPOUND CONTAINING A GIVEN SEMICONDUCTOR MATERIAL OF SILICON OR GERMANIUM; 8B) PROVIDING NITROGEN GAS; 8C)z PROVIDING AN OXYGEN GAS CATALYST, THE MOLE RATIO OF THE CATALYST TO SAID COMPOUND BEING LESS THAN 1; (D) PROVIDING A SEMI-CONDUCTIVE SUBSTRATE; (E) SIMULTANEOUSLY REACTING THE COMPOUND CONTAINING THE GIVEN SEMICONDUCTOR MATERIAL WITH THE NITROGEN GAS IN THE PRESENCE OF THE CATALYST TO FORM NITRIDE; AND (F) DEPOSITING SAID NITRIDE ON THE SUBSTRATE TO FORM A NITRIDE OF SAID SEMICONDUCTOR MATERIAL ON SAID SUBSTRATE.
Inventors
- 👤 R Maagdenberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:47
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; H10W74/43; Y; Y10; Y10S; Y10S438/00; Y10S438/903; Y10S438/954
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
102 words
IN SEMICONDUCTOR DEVICE FABRICATION A METHOD FOR PRODUCING NITRIDE FILMS OF A GIVEN SEMICONDUCTOR MATERIAL, COMPRISING THE STEPS OF: (A) PROVIDING A COMPOUND CONTAINING A GIVEN SEMICONDUCTOR MATERIAL OF SILICON OR GERMANIUM; 8B) PROVIDING NITROGEN GAS; 8C)z PROVIDING AN OXYGEN GAS CATALYST, THE MOLE RATIO OF THE CATALYST TO SAID COMPOUND BEING LESS THAN 1; (D) PROVIDING A SEMI-CONDUCTIVE SUBSTRATE; (E) SIMULTANEOUSLY REACTING THE COMPOUND CONTAINING THE GIVEN SEMICONDUCTOR MATERIAL WITH THE NITROGEN GAS IN THE PRESENCE OF THE CATALYST TO FORM NITRIDE; AND (F) DEPOSITING SAID NITRIDE ON THE SUBSTRATE TO FORM A NITRIDE OF SAID SEMICONDUCTOR MATERIAL ON SAID SUBSTRATE.
Claim 2
Dependent Claim
102 words
IN SEMICONDUCTOR DEVICE FABRICATION A METHOD FOR PRODUCING NITRIDE FILMS OF A GIVEN SEMICONDUCTOR MATERIAL, COMPRISING THE STEPS OF: (A) PROVIDING A COMPOUND CONTAINING A GIVEN SEMICONDUCTOR MATERIAL OF SILICON OR GERMANIUM; 8B) PROVIDING NITROGEN GAS; 8C)z PROVIDING AN OXYGEN GAS CATALYST, THE MOLE RATIO OF THE CATALYST TO SAID COMPOUND BEING LESS THAN 1; (D) PROVIDING A SEMI-CONDUCTIVE SUBSTRATE; (E) SIMULTANEOUSLY REACTING THE COMPOUND CONTAINING THE GIVEN SEMICONDUCTOR MATERIAL WITH THE NITROGEN GAS IN THE PRESENCE OF THE CATALYST TO FORM NITRIDE; AND (F) DEPOSITING SAID NITRIDE ON THE SUBSTRATE TO FORM A NITRIDE OF SAID SEMICONDUCTOR MATERIAL ON SAID SUBSTRATE.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-10-21 | 1978-04-22 | 1978-10-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-10-21 | 1982-04-22 | 1982-10-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-10-21 | 1986-04-22 | 1986-10-22 | $7700.00 | Window Closed / Lapsed |