US4398100A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Booster circuit
Assignee: Mitsubishi Electric Corp
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Filing: 1980-10-14
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Granted: 1983-08-09
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Expires: 2000-10-14
Abstract
Abstract A booster circuit in which a signal to be boosted and a boost capacitor are electrically separated during driving periods and are electrically coupled during boosting periods so that the capacitive load which the signal to be boosted must drive is significantly reduced. The boost capacitor is preferably charged to a predetermined voltage level prior to the boosting periods. The coupling means used is preferably an insulated gate FET transistor the gate voltage of which is controlled to be not lower than a power source voltage level before the boosting periods of time.
Inventors
- 👤 Youichi Tobita
- 👤 Hiroshi Nishizawa, deceased
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 08:25
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/01; H03K19/017; H03K19/01728; H02; H02M; H02M3/00; H02M3/02; H02M3/04; H02M3/06; H02M3/07
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
53 words
A booster circuit comprising: a load capacitor coupled to a terminal to which a signal to be boosted is applied; a boost capacitor to which a boosting signal is applied; and means for coupling said signal to be boosted to said boost capacitor only during boosting periods for said signal to be boosted.
Claim 2
Dependent Claim
53 words
A booster circuit comprising: a load capacitor coupled to a terminal to which a signal to be boosted is applied; a boost capacitor to which a boosting signal is applied; and means for coupling said signal to be boosted to said boost capacitor only during boosting periods for said signal to be boosted.
Claim 3
Dependent Claim
25 words
The booster circuit as defined in claim 1 further comprising means for charging said boost capacitor to a predetermined voltage level before said boosting periods.
Claim 4
Dependent Claim
30 words
The booster circuit as defined in claim 1 or 2 wherein said coupling means comprises an insulated gate FET for coupling said signal to be boosted to said boost capacitor.
Claim 5
Dependent Claim
155 words
A booster circuit comprising: a load capacitor coupled to be driven by a signal to be boosted; a first FET transistor having a first signal electrode coupled to receive said signal to be boosted and a gate electrode coupled to an external voltage source; a second FET transistor having a first signal electrode coupled to receive said signal to be boosted and having a gate electrode coupled to a signal electrode of said first FET transistor; a first boost capacitor coupled between said second signal electrode of said first FET transistor and a source of a boosting signal; a second boost capacitor coupled between a second signal electrode of said second FET transistor and said source of said boosting signal; and a third FET transistor having a first signal electrode coupled to said second signal electrode of said second FET transistor and a second signal electrode and gate electrode coupled to said external voltage source.
Claim 6
Dependent Claim
155 words
A booster circuit comprising: a load capacitor coupled to be driven by a signal to be boosted; a first FET transistor having a first signal electrode coupled to receive said signal to be boosted and a gate electrode coupled to an external voltage source; a second FET transistor having a first signal electrode coupled to receive said signal to be boosted and having a gate electrode coupled to a signal electrode of said first FET transistor; a first boost capacitor coupled between said second signal electrode of said first FET transistor and a source of a boosting signal; a second boost capacitor coupled between a second signal electrode of said second FET transistor and said source of said boosting signal; and a third FET transistor having a first signal electrode coupled to said second signal electrode of said second FET transistor and a second signal electrode and gate electrode coupled to said external voltage source.
Claim 7
Dependent Claim
269 words
A booster circuit comprising: a load capacitor coupled to be driven by a signal to be boosted; a first FET transistor having a first signal electrode coupled to receive said signal to be boosted and a gate electrode coupled to an external voltage source; a second FET transistor having a first signal electrode coupled to receive said signal to be boosted and having a gate electrode coupled to a signal electrode of said first FET transistor; a first boost capacitor coupled between said second signal electrode of said first FET transistor and a source of a boosting signal; a second boost capacitor coupled between a second signal electrode of said second FET transistor and said source of said boosting signal; a third FET transistor having a first signal electrode coupled to said second signal electrode of said second FET transistor and a second signal electrode coupled to said external voltage source; a fourth FET transistor having a first signal electrode coupled to said external voltage source and a second signal electrode coupled to a gate electrode of said third FET transistor; a fifth FET transistor having a first signal electrode coupled to said gate electrode of said third FET transistor and a second signal electrode coupled to ground; and a capacitor having a first terminal coupled to said gate electrode of said third FET transistor, said signal to be boosted being coupled to a gate electrode of said fifth FET transistor, a control signal being coupled to a second electrode of said capacitor and said control signal inverted being coupled to a gate electrode of said fourth FET transistor.
Claim 8
Dependent Claim
269 words
A booster circuit comprising: a load capacitor coupled to be driven by a signal to be boosted; a first FET transistor having a first signal electrode coupled to receive said signal to be boosted and a gate electrode coupled to an external voltage source; a second FET transistor having a first signal electrode coupled to receive said signal to be boosted and having a gate electrode coupled to a signal electrode of said first FET transistor; a first boost capacitor coupled between said second signal electrode of said first FET transistor and a source of a boosting signal; a second boost capacitor coupled between a second signal electrode of said second FET transistor and said source of said boosting signal; a third FET transistor having a first signal electrode coupled to said second signal electrode of said second FET transistor and a second signal electrode coupled to said external voltage source; a fourth FET transistor having a first signal electrode coupled to said external voltage source and a second signal electrode coupled to a gate electrode of said third FET transistor; a fifth FET transistor having a first signal electrode coupled to said gate electrode of said third FET transistor and a second signal electrode coupled to ground; and a capacitor having a first terminal coupled to said gate electrode of said third FET transistor, said signal to be boosted being coupled to a gate electrode of said fifth FET transistor, a control signal being coupled to a second electrode of said capacitor and said control signal inverted being coupled to a gate electrode of said fourth FET transistor.
Claim 9
Dependent Claim
193 words
A booster circuit comprising: a load capacitor coupled to be driven by a signal to be boosted; a first FET transistor having a gate electrode coupled to receive said signal to be boosted and a first signal electrode coupled to an external voltage source; a second FET transistor having a first signal electrode coupled to receive said signal to be boosted and a gate electrode coupled to a second signal electrode of said first FET transistor; a first boost capacitor coupled between said second signal electrode of said first FET transistor and a source of a boosting signal; a second boost capacitor coupled between a second signal electrode of said second FET transistor and said source of said boosting voltage; a third FET transistor having a first signal electrode coupled to said gate of said second FET transistor, a second signal electrode coupled to ground and a gate electrode coupled to a source of a control signal; and a fourth FET transistor having a first signal electrode coupled to said second signal electrode of said second FET transistor and a second signal electrode and a gate electrode coupled to said external voltage source.
Claim 10
Dependent Claim
193 words
A booster circuit comprising: a load capacitor coupled to be driven by a signal to be boosted; a first FET transistor having a gate electrode coupled to receive said signal to be boosted and a first signal electrode coupled to an external voltage source; a second FET transistor having a first signal electrode coupled to receive said signal to be boosted and a gate electrode coupled to a second signal electrode of said first FET transistor; a first boost capacitor coupled between said second signal electrode of said first FET transistor and a source of a boosting signal; a second boost capacitor coupled between a second signal electrode of said second FET transistor and said source of said boosting voltage; a third FET transistor having a first signal electrode coupled to said gate of said second FET transistor, a second signal electrode coupled to ground and a gate electrode coupled to a source of a control signal; and a fourth FET transistor having a first signal electrode coupled to said second signal electrode of said second FET transistor and a second signal electrode and a gate electrode coupled to said external voltage source.
Claim 11
Dependent Claim
175 words
A booster circuit comprising: a load capacitor coupled to be driven by a signal to be boosted; a first FET transistor having a first signal electrode coupled to receive said signal to be boosted and a gate electrode coupled to an external voltage source; a second FET transistor having a first signal electrode coupled to receive said signal to be boosted and a gate electrode coupled to a second signal electrode of said first FET transistor; a first boost capacitor coupled between said second signal electrode of said first FET transistor and a source of a first boosting signal; a second boost capacitor coupled between said second signal electrode of said second FET transistor and a second source of a boosting signal, the rise of said second boosting signal occurring later in time than the rise of said first boosting signal; and a third FET transistor having a first signal electrode coupled to said second signal electrode of said second FET transistor and a second signal electrode and gate electrode coupled to said voltage source.
Claim 12
Dependent Claim
175 words
A booster circuit comprising: a load capacitor coupled to be driven by a signal to be boosted; a first FET transistor having a first signal electrode coupled to receive said signal to be boosted and a gate electrode coupled to an external voltage source; a second FET transistor having a first signal electrode coupled to receive said signal to be boosted and a gate electrode coupled to a second signal electrode of said first FET transistor; a first boost capacitor coupled between said second signal electrode of said first FET transistor and a source of a first boosting signal; a second boost capacitor coupled between said second signal electrode of said second FET transistor and a second source of a boosting signal, the rise of said second boosting signal occurring later in time than the rise of said first boosting signal; and a third FET transistor having a first signal electrode coupled to said second signal electrode of said second FET transistor and a second signal electrode and gate electrode coupled to said voltage source.
Claim 13
Dependent Claim
253 words
A booster circuit comprising: a load capacitor coupled to be driven by a signal to be boosted; a first FET transistor having a first signal electrode coupled to receive said signal to be boosted; a second FET transistor having a first signal electrode coupled to receive said signal to be boosted and a gate electrode coupled to a second signal electrode of said first FET transistor; a first boost capacitor coupled between said second signal electrode of said first FET transistor and a source of a boosting signal; a second boost capacitor coupled between a second signal electrode of said second FET transistor and said source of a boosting signal; a third FET transistor having a first signal electrode coupled between said second signal electrode of said second FET transistor and a second signal electrode and a gate electrode coupled to an external voltage source; a fourth FET transistor having a first signal electrode coupled to a gate electrode of said first FET transistor and a second signal electrode coupled to said external voltage source; a fifth FET transistor having a first signal electrode coupled to said gate electrode of said first FET transistor and a second signal electrode coupled to ground; a capacitor coupled between a first control signal source and said gate electrode of said first FET transistor, a gate electrode of said fourth FET transistor being coupled to a second control signal source and a gate electrode of said fifth FET transistor being coupled to a third control signal source.
Claim 14
Dependent Claim
253 words
A booster circuit comprising: a load capacitor coupled to be driven by a signal to be boosted; a first FET transistor having a first signal electrode coupled to receive said signal to be boosted; a second FET transistor having a first signal electrode coupled to receive said signal to be boosted and a gate electrode coupled to a second signal electrode of said first FET transistor; a first boost capacitor coupled between said second signal electrode of said first FET transistor and a source of a boosting signal; a second boost capacitor coupled between a second signal electrode of said second FET transistor and said source of a boosting signal; a third FET transistor having a first signal electrode coupled between said second signal electrode of said second FET transistor and a second signal electrode and a gate electrode coupled to an external voltage source; a fourth FET transistor having a first signal electrode coupled to a gate electrode of said first FET transistor and a second signal electrode coupled to said external voltage source; a fifth FET transistor having a first signal electrode coupled to said gate electrode of said first FET transistor and a second signal electrode coupled to ground; a capacitor coupled between a first control signal source and said gate electrode of said first FET transistor, a gate electrode of said fourth FET transistor being coupled to a second control signal source and a gate electrode of said fifth FET transistor being coupled to a third control signal source.
Claim 15
Dependent Claim
92 words
A booster circuit comprising: a load capacitor coupled to a terminal to which a signal to be boosted is coupled; a first boost capacitor having a first terminal to which a boosting signal is applied; means for coupling said signal to be boosted to said first boost capacitor only during boosting periods for said signal to be boosted and; a second boost capacitor having a first terminal to which said boosting signal is applied and a second terminal connected to a control element of said coupling means for driving said coupling means.
Claim 16
Dependent Claim
92 words
A booster circuit comprising: a load capacitor coupled to a terminal to which a signal to be boosted is coupled; a first boost capacitor having a first terminal to which a boosting signal is applied; means for coupling said signal to be boosted to said first boost capacitor only during boosting periods for said signal to be boosted and; a second boost capacitor having a first terminal to which said boosting signal is applied and a second terminal connected to a control element of said coupling means for driving said coupling means.
Claim 17
Dependent Claim
99 words
A booster circuit comprising: a load capacitor coupled to a terminal to which a signal to be boosted is coupled; a first boost capacitor having a first terminal to which first boosting signal is applied; means for coupling said signal to be boosted to said first boost capacitor only during boosting periods for said signal to be boosted; and a second boost capacitor having a first terminal to which a second boosting signal different from said first boosting signal is applied and a second terminal connected to a control element of said coupling means for driving said coupling means.
Claim 18
Dependent Claim
99 words
A booster circuit comprising: a load capacitor coupled to a terminal to which a signal to be boosted is coupled; a first boost capacitor having a first terminal to which first boosting signal is applied; means for coupling said signal to be boosted to said first boost capacitor only during boosting periods for said signal to be boosted; and a second boost capacitor having a first terminal to which a second boosting signal different from said first boosting signal is applied and a second terminal connected to a control element of said coupling means for driving said coupling means.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-08-08 | 1987-02-07 | 1987-08-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-08-08 | 1991-02-07 | 1991-08-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-08-08 | 1995-02-07 | 1995-08-09 | $7700.00 | Window Closed / Lapsed |