US4395482A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for the preparation of heat-resistant relief structures using positive resists
Assignee: Siemens AG
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Filing: 1982-04-28
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Granted: 1983-07-26
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Expires: 2002-04-28
Abstract
Abstract The invention relates to heat-resistant positive resists based upon precursor stages of highly heat-resistant polymers and light-sensitive diazoquinones, as well as to a method for preparing heat-resistant relief structures of such positive resists. The positive resists of the type mentioned are developed in such a manner that they are heat-resistant as well as have a long storage life and are easily processed. The invention provides for the use of oligomer and/or polymer precursor stages of polyoxazoles in the form of polycondensation products of aromatic and/or heterocyclic dihydroxydiamino compounds and dicarboxylic acid chlorides or esters. The positive resists according to the invention are suitable especially for applications in microelectronics.
Inventors
- 👤 Hellmut Ahne
- 👤 Eberhard Kuhn
- 👤 Roland Rubner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 22:38
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/022; G03F7/023; G03F7/0233
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
143 words
A method for the preparation of heat-resistant relief structures, comprising: (a) applying to a substrate, in the form of a layer or foil, a heat-resistant positive resist comprised of (1) a precursor of a highly heat-resistant polymer and (2) a light-sensitive diazoquinone, said precursor comprising an oligomeric and/or polymeric precursor of a polyoxazole in the form of a polycondensation product of an aromatic and/or heterocyclic dihydroxydiamino compound and a dicarboxylic acid chloride or a dicarboxylic acid ester; (b) generating exposed or irradiated portions on said resist by treating said resist by a method selected from the group consisting of (1) exposing said resist through a mask with actinic light and (2) irradiating said resist by deflection of a light, electron or ion beam; (c) removing the exposed or irradiated portions from said layer or foil; and (d) annealing the relief structure so obtained.
Claim 2
Independent Claim
143 words
A method for the preparation of heat-resistant relief structures, comprising: (a) applying to a substrate, in the form of a layer or foil, a heat-resistant positive resist comprised of (1) a precursor of a highly heat-resistant polymer and (2) a light-sensitive diazoquinone, said precursor comprising an oligomeric and/or polymeric precursor of a polyoxazole in the form of a polycondensation product of an aromatic and/or heterocyclic dihydroxydiamino compound and a dicarboxylic acid chloride or a dicarboxylic acid ester; (b) generating exposed or irradiated portions on said resist by treating said resist by a method selected from the group consisting of (1) exposing said resist through a mask with actinic light and (2) irradiating said resist by deflection of a light, electron or ion beam; (c) removing the exposed or irradiated portions from said layer or foil; and (d) annealing the relief structure so obtained.
Claim 3
Dependent Claim
21 words
A method according to claim 1 wherein said positive resist is dissolved in an organic solvent for application to the substrate.
Claim 4
Dependent Claim
11 words
A method according to claim 2 wherein said solvent comprises N-methylpyrrolidone.
Claim 5
Dependent Claim
24 words
A method according to claim 1 wherein said substrate comprises a member selected from the group consisting of glass, metal, plastic and semiconductor material.
Claim 6
Dependent Claim
20 words
A method according to claim 1 wherein said relief structure is annealed by heating to a temperature above 200° C.
Claim 7
Dependent Claim
16 words
A method according to claim 5 wherein said temperature is between about 300° and 350° C.
Claim 8
Dependent Claim
21 words
A method according to claim 1 wherein the annealed relief structure is dissolved off the substrate and transferred to another substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-07-25 | 1987-01-24 | 1987-07-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-07-25 | 1991-01-24 | 1991-07-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-07-25 | 1995-01-24 | 1995-07-26 | $7700.00 | Window Closed / Lapsed |