Patent US4393577A successfully refreshed from Google Patents.
US4393577A
Expired / Lapsed
US
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Semiconductor devices and method of manufacturing the same
Assignee: NTT Inc
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Filing: 1981-12-11
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Granted: 1983-07-19
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Expires: 2001-12-11
Abstract
Abstract In a semiconductor device of the type comprising a semiconductor substrate made of P type silicon, a P type monocrystalline silicon region formed on the major surface of the substrate and containing a P type impurity, and a porous silicon oxide region surrounding the P type silicon region, the porous silicon oxide region is made to contact all side surfaces of the P type silicon region and all or at least a portion of the bottom surface thereof.
Inventors
- 👤 Kazuo Imai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:07
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0167; H10D84/02; H10D84/03; H10D84/038; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10P30/208; H10P30/21; H10P30/28; H10P50/00; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P95/00; H10P95/90; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10P90/191; H10W10/011; H10W10/012; H10W10/13; Y; Y10; Y10S; Y10S148/00; Y10S148/084; Y10S148/085
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
129 words
A method of manufacturing a semiconductor device comprising the steps of selectively implanting proton ions into a principal surface of a P type monocrystalline silicon substrate; heating said silicon substrate to form an N type monocrystalline silicon region; anodizing said substrate to form a porous silicon region extending in a thickness direction from the major surface of said P type monocrystalline substrate except said N type silicon region, said porous silicon region being formed to contact with all side surfaces and at least a portion of a bottom surface of said N type silicon region; and thermally oxidizing said porous silicon region for converting the same into a porous silicon oxide region while at the same time converting said N type silicon region into a P type silicon region.
Claim 2
Independent Claim
129 words
A method of manufacturing a semiconductor device comprising the steps of selectively implanting proton ions into a principal surface of a P type monocrystalline silicon substrate; heating said silicon substrate to form an N type monocrystalline silicon region; anodizing said substrate to form a porous silicon region extending in a thickness direction from the major surface of said P type monocrystalline substrate except said N type silicon region, said porous silicon region being formed to contact with all side surfaces and at least a portion of a bottom surface of said N type silicon region; and thermally oxidizing said porous silicon region for converting the same into a porous silicon oxide region while at the same time converting said N type silicon region into a P type silicon region.
Claim 3
Dependent Claim
30 words
The method of manufacturing a semiconductor device according to claim 1 wherein said porous silicon region is formed to contact the entire bottom surface of said N type silicon region.
Claim 4
Dependent Claim
33 words
The method of manufacturing a semiconductor device according to claim 1 wherein said silicon substrate is heated to a temperature of from 300° to 500° C. to form said N type silicon region.
Claim 5
Dependent Claim
34 words
The method of forming a semiconductor device according to claim 1 wherein said silicon substrate is heated to a temperature of from 850° C. to 1100° C. for forming said porous silicon oxide region.
Claim 6
Dependent Claim
65 words
The method of manufacturing a semiconductor device according to claim 1 which further comprises the steps of applying oxidation resistant film on a portion of said monocrystalline silicon substrate where said N type silicon region is to be formed, before implanting said proton ions, and removing said oxidation resistant film after said N type silicon region has been converted into said P type silicon region.
Claim 7
Dependent Claim
42 words
The method of manufacturing a semiconductor device according to claim 1 which further comprises a step of selectively incorporating a group V impurity into said monocrystalline silicon substrate prior to implant said proton ions thereby to form an N type silicon region.
Claim 8
Dependent Claim
35 words
The method of manufacturing a semiconductor device according to claim 1 further comprising a step of selectively incorporating a group V impurity into said P type silicon region thereby forming an N type silicon region.
Claim 9
Dependent Claim
39 words
The method according to claim 1 which further comprises a step of incorporating an N type impurity into said P type silicon region to form source and drain regions thereby forming an N channel type MIS field effect transistor.
Claim 10
Dependent Claim
45 words
The method of manufacturing a semiconductor device according to claim 5 which further comprises a step of incorporating a group V impurity into a region beneath said oxidation resistant film to form an N type silicon region concurrently with the implantation of said proton ions.
Claim 11
Dependent Claim
36 words
The method of manufacturing a semiconductor device according to claim 5 which further comprises a step of selectively incorporating a group V impurity into said P type silicon region to form an N type silicon region.
Claim 12
Dependent Claim
45 words
The method according to claim 6 which further comprises a step of incorporating a P type impurity into said N type silicon region doped with said group V impurity to form source and drain regions thus obtaining a P channel type MIS field effect transistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-07-18 | 1987-01-17 | 1987-07-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-07-18 | 1991-01-17 | 1991-07-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-07-18 | 1995-01-17 | 1995-07-19 | $7700.00 | Window Closed / Lapsed |