Abstract The present application discloses a sputtering device comprising a target electrode having a target and a flat magnet located under the target and constituted by an annular magnetic pole having one polarity and a magnetic pole having the other polarity located inside the annular magnetic pole, a substrate disposed oppositely to the target, a ring electrode for electric field for generating an electric field on the magnet at right angle thereto, an electron beam emitting filament disposed adjacent the target, and an anode electrode for guiding an electron from the filament over the target. According to the present invention, the target material can be effectively deposited to the substrate and efficiently act on the formation of a film. In addition, since portions of the sputtered neutral target material are being ionized, the characteristics of the deposited film can be freely controlled by applying to the substrate a variable voltage for controlling the characteristics of a deposited film, so as to control the incident energy of the ionized target material to the substrate.
A sputtering device comprising: a target electrode having a target and a flat magnet disposed under said target said magnet comprised of an annular magnetic pole having one polarity and a magnetic pole having the other polarity located inside said annular magnetic pole; a substrate disposed oppositely to said target; an electric field ring electrode disposed between said substrate and said target for generating an electric field between said target electrode and said electric field ring electrode, said electric field being incident on said magnet in a direction substantially perpendicular thereto; an electron beam emitting filament disposed adjacent said target; and an anode electrode for guiding an electron beam from said filament between said target and said electric field ring electrode.
Claim 2
Dependent Claim
121 words
A sputtering device comprising: a target electrode having a target and a flat magnet disposed under said target said magnet comprised of an annular magnetic pole having one polarity and a magnetic pole having the other polarity located inside said annular magnetic pole; a substrate disposed oppositely to said target; an electric field ring electrode disposed between said substrate and said target for generating an electric field between said target electrode and said electric field ring electrode, said electric field being incident on said magnet in a direction substantially perpendicular thereto; an electron beam emitting filament disposed adjacent said target; and an anode electrode for guiding an electron beam from said filament between said target and said electric field ring electrode.
Claim 3
Dependent Claim
32 words
The sputtering device as set forth in claim 1, wherein a variable voltage for controlling the characteristics of a deposited material to be formed on the substrate, is applied to said substrate.