Patent US4388537A successfully refreshed from Google Patents.
US4388537A
Expired / Lapsed
US
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Substrate bias generation circuit
Assignee: Toshiba Corp
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Filing: 1980-12-03
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Granted: 1983-06-14
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Expires: 2000-12-03
Abstract
Abstract Disclosed is a substrate bias generator circuit which comprises an oscillator circuit, a driving circuit producing a rectangular-wave signal in accordance with an oscillation output signal from the oscillator circuit, and a charge pump circuit pumping electric charges into a substrate in accordance with the rectangular-wave output signal from the driving circuit. The oscillator circuit is a voltage-controlled oscillator circuit whose oscillation frequency is controlled in accordance with a substrate bias voltage from the charge pump circuit.
Inventors
- 👤 Akira Kanuma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 20:49
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/205
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
133 words
A substrate bias generation circuit comprising: a voltage-controlled oscillator circuit having a controlled terminal for receiving an input signal for controlling said voltage-controlled oscillator circuit to produce an oscillation output signal, said voltage-controlled oscillator circuit including a ring oscillator circuit comprising an odd number of inverter means each having a delay function with a delay time changed in accordance with said input signal received by said control terminal; a driving circuit for producing a driving signal in accordance with said oscillation output signal from said oscillator circuit; and a charge pump circuit for producing a substrate bias voltage in accordance with said driving signal from said driving circuit, said substrate bias voltage being supplied to said control terminal of said oscillator circuit to control the delay time of each of said inverter means.
Claim 2
Dependent Claim
133 words
A substrate bias generation circuit comprising: a voltage-controlled oscillator circuit having a controlled terminal for receiving an input signal for controlling said voltage-controlled oscillator circuit to produce an oscillation output signal, said voltage-controlled oscillator circuit including a ring oscillator circuit comprising an odd number of inverter means each having a delay function with a delay time changed in accordance with said input signal received by said control terminal; a driving circuit for producing a driving signal in accordance with said oscillation output signal from said oscillator circuit; and a charge pump circuit for producing a substrate bias voltage in accordance with said driving signal from said driving circuit, said substrate bias voltage being supplied to said control terminal of said oscillator circuit to control the delay time of each of said inverter means.
Claim 3
Dependent Claim
48 words
A substrate bias generation circuit according to claim 1, wherein each of said inverter means includes an inverter circuit and a delay circuit coupled in series with said inverter circuit and having its delay time changed in accordance with the substrate bias voltage from said charge pump circuit.
Claim 4
Dependent Claim
43 words
A substrate bias generation circuit according to claim 2, wherein said delay circuit includes a delay MOS transistor to receive at its gate the substrate bias voltage from said charge pump circuit and a capacitor coupled in series with said delay MOS transistor.
Claim 5
Dependent Claim
64 words
A substrate bias generation circuit according to claim 1, wherein each of said inverter means includes a series circuit of resistive means and an MOS transistor having a gate connected to said control terminal of said voltage-controlled oscillator circuit, a switching MOS transistor coupled with said series circuit, and a capacitor coupled with a junction between said series circuit and said switching MOS transistor.
Claim 6
Dependent Claim
119 words
A substrate bias generation circuit comprising: a charge pump circuit for producing a substrate bias voltage; a driving circuit for producing a driving signal for controlling the voltage level of said substrate bias voltage generated by said charge pump circuit; and a voltage-controlled oscillator circuit having a ring oscillator circuit comprising an odd number of circuit units, each of said circuit units being provided with an input terminal and an output terminal, a series circuit including an MOS transistor for receiving at a gate electrode the substrate bias voltage from said charge pump circuit and resistive means, said series circuits being coupled at one end to said output terminal and having a current path coupled with said output terminal.
Claim 7
Dependent Claim
119 words
A substrate bias generation circuit comprising: a charge pump circuit for producing a substrate bias voltage; a driving circuit for producing a driving signal for controlling the voltage level of said substrate bias voltage generated by said charge pump circuit; and a voltage-controlled oscillator circuit having a ring oscillator circuit comprising an odd number of circuit units, each of said circuit units being provided with an input terminal and an output terminal, a series circuit including an MOS transistor for receiving at a gate electrode the substrate bias voltage from said charge pump circuit and resistive means, said series circuits being coupled at one end to said output terminal and having a current path coupled with said output terminal.
Claim 8
Dependent Claim
110 words
A substrate bias generation circuit comprising; a charge pump circuit for producing a substrate bias voltage; a driving circuit for producing a driving signal, said driving signal being supplied to said charge pump circuit to control the voltage level of said substrate bias voltage; and a voltage-controlled oscillator circuit having a ring oscillator circuit comprising an odd number of circuit units, each of said circuit units including an MOS inverter comprising a resistive means and a switching MOS transistor, and an MOS transistor having a current path coupled in series with said MOS inverter and receiving at a gate terminal said substrate bias voltage produced by said charge pump circuit.
Claim 9
Dependent Claim
110 words
A substrate bias generation circuit comprising; a charge pump circuit for producing a substrate bias voltage; a driving circuit for producing a driving signal, said driving signal being supplied to said charge pump circuit to control the voltage level of said substrate bias voltage; and a voltage-controlled oscillator circuit having a ring oscillator circuit comprising an odd number of circuit units, each of said circuit units including an MOS inverter comprising a resistive means and a switching MOS transistor, and an MOS transistor having a current path coupled in series with said MOS inverter and receiving at a gate terminal said substrate bias voltage produced by said charge pump circuit.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-06-13 | 1986-12-13 | 1987-06-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-06-13 | 1990-12-13 | 1991-06-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-06-13 | 1994-12-13 | 1995-06-14 | $7700.00 | Window Closed / Lapsed |