Abstract A PN or PIN junction type semiconductor photoelectric conversion device which comprises a semiconductor layer having formed therein at least one PN or PIN junction, a light-transparent, conductive layer disposed on the semiconductor layer and a conductive layer disposed on the semiconductor layer on the opposite side from the light-transparent, conductive layer, and in which light is incident to the semiconductor layer from the outside of the light-transparent, conductive layer, a photoelectric conversion function is obtained by the presence of the barrier of the PN or PIN junction formed in the semiconductor layer. In such a PN or PIN junction type semiconductor photoelectric conversion device, a light-transparent, current-permeable nitride layer is artificially formed between the semiconductor layer and the light-transparent, conductive layer. The light-transparent, current-permeable nitride layer is a conductive, insulating or semi-insulating layer. The conductive nitride layer is made of a conductive metal nitride. The insulating nitride layer is made of a silicon nitride. The semi-insulating nitride layer is made of a silicon nitride and a conductive metal nitride.
A PN or PIN junction type semiconductor photoelectric conversion device which comprises a semiconductor layer having formed therein at least one PN or PIN junction, a light-transparent, conductive layer disposed on the semiconductor layer, and a conductive layer disposed on the semiconductor layer on the opposite side from the light-transparent, conductive layer, characterized in that a light-transparent, current-permeable nitride layer is interposed between the semiconductor layer and the light-transparent, conductive layer, and that nitrogen introduced into at least the region of the semiconductor layer on the side of the light-transparent, current-permeable nitride layer forms a wide-to-narrow energy band gap structure in which the region of the semiconductor layer having introduced thereinto the nitrogen has a larger energy band gap than does a region of the semiconductor layer adjacent thereto.
Claim 2
Dependent Claim
129 words
A PN or PIN junction type semiconductor photoelectric conversion device which comprises a semiconductor layer having formed therein at least one PN or PIN junction, a light-transparent, conductive layer disposed on the semiconductor layer, and a conductive layer disposed on the semiconductor layer on the opposite side from the light-transparent, conductive layer, characterized in that a light-transparent, current-permeable nitride layer is interposed between the semiconductor layer and the light-transparent, conductive layer, and that nitrogen introduced into at least the region of the semiconductor layer on the side of the light-transparent, current-permeable nitride layer forms a wide-to-narrow energy band gap structure in which the region of the semiconductor layer having introduced thereinto the nitrogen has a larger energy band gap than does a region of the semiconductor layer adjacent thereto.
Claim 3
Dependent Claim
44 words
A PN or PIN junction type semiconductor photoelectric conversion device according to claim 1 wherein the light-transparent, current-permeable nitride layer is formed of a conductive metal nitride selected from the group consisting of titanium nitride, tantalum nitride, tin nitride, tungsten nitride and chromium nitride.
Claim 4
Dependent Claim
21 words
A PN or PIN junction type semiconductor photoelectric conversion device according to claim 1 wherein the light-transparent conductive layer contains nitrogen.