Photoelectrolyzer

Claim 2

A photoelectrolyzer comprising a number of minute solar cell elements suspended in an electrolyte, each solar cell element comprising at least one layer which is constituted by at least a first thin film composed of intrinsic amorphous silicon, having a carrier life of 10 -7 sec or longer, an average localized state density in the forbidden gap of not more than 10 17 /cm 3 and an active region in which carrier mobility is 10 -1 cm 2 /V.sec or more, or N-type amorphous silicon prepared by doping said intrinsic amorphous silicon with an N-type impurity, or both thereof, and a second thin film which is formed on one surface of the active region of said first thin film, thereby forming a potential barrier therewith, said second thin film being light transmissive.

Claim 3

A photoelectrolyzer according to clam 1, wherein the solar cell element has a P-type amorphous silicon film as the second thin film.

Claim 4

A photoelectrolyzer according to clam 1, wherein the solar cell element has a P-type amorphous silicon film as the second thin film.

Claim 5

A photoelectrolyzer according to claim 2, wherein the solar cell element has an N-type amorphous silicon film as the first thin film.

Claim 6

A photoelectrolyzer according to claim 2, wherein the solar cell has an N-type amorphous silicon film and an intrinsic amorphous silicon film as the first thin film, and having the second amorphous silicon thin film on the side of said intrinsic amorphous silicon thin film.

Claim 7

A photoelectrolyzer according to claim 1, wherein the second thin film of the solar cell element is a thin metal film.

Claim 8

A photoelectrolyzer according to claim 1, wherein the second thin film of the solar cell element comprises an intermediate layer and a light transmitting thin metal film formed thereon.

Claim 9

A photoelectrolyzer according to claim 6, wherein the intermediate layer is a thin oxide film having an electroconductivity of 10 2 Ω -1 .cm -1 or less.

Claim 10

A photoelectrolyzer according to claim 1, wherein the second film of the solar cell element comprises a transparent electrode film.

Claim 11

A photoelectrolyzer according to claim 8, wherein the transparent electrode is constituted of indium oxide, tin oxide or a mixture thereof.

Claim 12

A photoelectrolyzer according to claim 1, wherein the solar cell element has a laminated structure having 2 to 10 of said layers so that the first film and the second film may be alternately stacked on each other.

Claim 13

A photoelectrolyzer according to claim 10, wherein the first film is constituted of the intrinsic amorphous silicon film and the N-type amorphous silicon film, and the second film is constituted of a P-type amorphous silicon film formed on the side of said intrinsic amorphous silicon film.

Claim 14

A photoelectrolyzer according to claim 1, wherein the solar cell element has a laminated structure comprising 2 to 10 layers stacked successively on each other, each layer consisting of a first thin film which is constituted of an intrinsic amorphous silicon film and an N-type amorphous silicon film, a second thin film which is formed on the side of said intrinsic amorphous silicon film and constituted of a P-type amorphous silicon film and a third thin film which is a thin cermet film.

Claim 15

A photoelectrolyzer comprising a number of minute solar cell elements suspended in an electrolyte, each solar cell element comprising at least one layer which is constituted by at least a first thin film composed of intrinsic amorphous silicon, having a carrier life of 10 -7 sec or longer, an average localized state density in the forbidden gap of not more than 10 17 /cm 3 and an active region in which carrier mobility is 10 -3 cm 2 /V.sec or more, or N-type amorphous silicon prepared by doping said intrinsic amosphous silicon with an N-type impurity, or both thereof, and a second thin film which is formed on one surface of the active region of said first thin film, thereby forming a potential barrier therewith, said second thin film being light transmissive; wherein the solar cell element has a laminated structure having 2 to 10 of said layers so that the first film and the second film may be alternately stacked on each other.

Claim 16

A photoelectrolyzer comprising a number of minute solar cell elements suspended in an electrolyte, each solar cell element comprising at least one layer which is constituted by at least a first thin film composed of intrinsic amorphous silicon, having a carrier life of 10 -7 sec or longer, an average localized state density in the forbidden gap of not more than 10 17 /cm 3 and an active region in which carrier mobility is 10 -3 cm 2 /V.sec or more, or N-type amorphous silicon prepared by doping said intrinsic amosphous silicon with an N-type impurity, or both thereof, and a second thin film which is formed on one surface of the active region of said first thin film, thereby forming a potential barrier therewith, said second thin film being light transmissive; wherein the solar cell element has a laminated structure having 2 to 10 of said layers so that the first film and the second film may be alternately stacked on each other.

Claim 17

A photoelectrolyzer according to claim 13 wherein the first film is constituted of the intrinsic amorphous silicon film and the N-type amorphous silicon film, and the second film is constituted of a P-type amorphous silicon film formed on the side of said intrinsic amorphous silicon film.

Claim 18

A photoelectrolyzer comprising a number of minute solar cell elements suspended in an electrolyte, each solar cell element comprising at least one layer which is constituted by at least a first thin film composed of intrinsic amorphous silicon, having a carrier life of 10 -7 sec or longer, an average localized state density in the forbidden gap of not more than 10 17 /cm 3 and an active region in which carrier mobility is 10 -3 cm 2 /V.sec or more, or N-type amorphous silicon prepared by doping said intrinsic amorphous silicon with an N-type impurity, or both thereof, and a second thin film which is formed on one surface of the active region of said first thin film, thereby forming a potential barrier therewith, said second thin film being light transmissive; wherein the solar cell element has a laminated structure comprising 2 to 10 layers stacked successively on each other, each layer consisting of a first thin film which is constituted of an intrinsic amorphous silicon film and an N-type amorphous silicon film, a second thin film which is formed on the side of said intrinsic amorphous silicon film and constituted of a P-type amorphous silicon film and a third thin film which is a thin cermet film.

Claim 19

A photoelectrolyzer comprising a number of minute solar cell elements suspended in an electrolyte, each solar cell element comprising at least one layer which is constituted by at least a first thin film composed of intrinsic amorphous silicon, having a carrier life of 10 -7 sec or longer, an average localized state density in the forbidden gap of not more than 10 17 /cm 3 and an active region in which carrier mobility is 10 -3 cm 2 /V.sec or more, or N-type amorphous silicon prepared by doping said intrinsic amorphous silicon with an N-type impurity, or both thereof, and a second thin film which is formed on one surface of the active region of said first thin film, thereby forming a potential barrier therewith, said second thin film being light transmissive; wherein the solar cell element has a laminated structure comprising 2 to 10 layers stacked successively on each other, each layer consisting of a first thin film which is constituted of an intrinsic amorphous silicon film and an N-type amorphous silicon film, a second thin film which is formed on the side of said intrinsic amorphous silicon film and constituted of a P-type amorphous silicon film and a third thin film which is a thin cermet film.

Claim 20

A photoelectrolyzer according to claim 1 wherein the minute solar cell elements have a maximum size in the range of from 5 μm to 5 mm.