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US4094751A Expired / Lapsed US ⏱️ 0.0 years remaining

Photochemical diodes

Assignee: Honeywell International Inc
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Filing: 1976-09-30
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Granted: 1978-06-13
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Expires: 1996-09-30
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Abstract

Abstract Photochemical diodes are provided which use light to drive both endoergic and exoergic chemical reactions such that optical energy is converted into chemical energy. The photochemical diodes are typically suspended in a bulk volume matrix of the constituent chemical reactants. The photochemical diodes, in the form of either Schottky-type diodes or p-n type diodes, are employed, for example, to convert water into hydrogen plus oxygen (or hydrogen peroxide); to convert hydrogen sulfide into hydrogen plus sulfur; and to photo-catalyze chemical reactions. The photochemical diodes of the invention comprise two portions, a first portion comprising an appropriately doped semiconductor material of a given conductivity and provided with an ohmic contact and a second portion comprising either metal (Schottky-type) or an appropriately doped semiconductor material of a conductivity type opposite to that of the first portion and provided with an ohmic contact (p-n type). The two portions are intimately joined together through the ohmic contact(s). Solar radiation is conveniently employed as a source of optical energy.

Inventors

  • 👤 Arthur J. Nozik

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 17:45
CPC Classifications
B; B01; B01J; B01J19/00; B01J19/08; B01J19/12; B01J19/122; C; C25; C25B; C25B1/00; C25B1/50; C25B1/55; C01; C01B; C01B3/00; C01B3/02; C01B3/04; C01B3/042; H; H01; H01G; H01G9/00; H01G9/20; H01M; H01M14/00; H01M14/005; Y; Y02; Y02E; Y02E60/00; Y02E60/30; Y02E60/36; Y02P; Y02P20/00; Y02P20/10; Y02P20/133; Y10; Y10S; Y10S204/00; Y10S204/03

Claims Analysis

Total Claims: 45
Claim 1
Independent Claim 60 words
A photochemical diode comprising two portions, a first portion comprising at least one appropriately doped p-type semiconductor material provided with an ohmic contact over a portion thereof and a second portion comprising at least one appropriately doped n-type semiconductor material provided with an ohmic contact over a portion thereof and joined to said first portion through both said ohmic contacts.
Claim 2
Dependent Claim 60 words
A photochemical diode comprising two portions, a first portion comprising at least one appropriately doped p-type semiconductor material provided with an ohmic contact over a portion thereof and a second portion comprising at least one appropriately doped n-type semiconductor material provided with an ohmic contact over a portion thereof and joined to said first portion through both said ohmic contacts.
Claim 3
Dependent Claim 38 words
The photochemical diode of claim 1 in which the appropriately doped p-type semiconductor material consists essentially of at least one p-doped member selected from the group consisting of Si, GaP, GaAs, InP, CuInS 2 and Cu 2 O.
Claim 4
Dependent Claim 41 words
The photochemical diode of claim 1 in which the appropriately doped n-type semiconductor material consists essentially of at least one n-doped member selected from the group consisting of Si, CdS, TiO 2 , GaP, GaAs, CdSe, InP and CuInS 2 .
Claim 5
Dependent Claim 22 words
The photochemical diode of claim 1 additionally comprising an insulating bead on the surface of the diode between the two joined portions.
Claim 6
Dependent Claim 130 words
A process for converting optical energy into chemical energy to drive a chemical reaction in a matrix of chemical reactants which comprises suspending an assembly of discrete photochemical diodes in the reactant matrix and illuminating the diodes with optical energy, the diodes each comprising two portions, a first portion comprising at least one appropriately doped semiconductor material of a given conductivity type and provided with an ohmic contact over a portion thereof, and a second portion comprising either metal which is joined to said first portion through said ohmic contact or at least one appropriately doped semiconductor material of a given conductivity type opposite to that of said first portion, provided with an ohmic contact over a portion thereof and joined to said first portion through both said ohmic contacts.
Claim 7
Dependent Claim 130 words
A process for converting optical energy into chemical energy to drive a chemical reaction in a matrix of chemical reactants which comprises suspending an assembly of discrete photochemical diodes in the reactant matrix and illuminating the diodes with optical energy, the diodes each comprising two portions, a first portion comprising at least one appropriately doped semiconductor material of a given conductivity type and provided with an ohmic contact over a portion thereof, and a second portion comprising either metal which is joined to said first portion through said ohmic contact or at least one appropriately doped semiconductor material of a given conductivity type opposite to that of said first portion, provided with an ohmic contact over a portion thereof and joined to said first portion through both said ohmic contacts.
Claim 8
Dependent Claim 18 words
The process of claim 5 in which exoergic chemical reactions in a matrix of chemical reactants are catalyzed.
Claim 9
Dependent Claim 18 words
The process of claim 5 in which endoergic chemical reactions in a matrix of chemical reactants are driven.
Claim 10
Dependent Claim 15 words
The process of claim 5 in which the optical energy is provided by solar radiation.
Claim 11
Dependent Claim 26 words
The process of claim 5 in which the chemical reaction comprises photolytic decomposition of water into hydrogen plus at least one of oxygen and hydrogen peroxide.
Claim 12
Dependent Claim 21 words
The process of claim 5 in which the chemical reaction comprises photolytic decomposition of hydrogen sulfide into hydrogen plus zero-valence sulfur.
Claim 13
Dependent Claim 42 words
The process of claim 5 in which the first portion of the diodes comprises appropriately doped p-type semiconductor material provided with an ohmic contact and the second portion of the diodes comprises appropriately doped n-type semiconductor material provided with an ohmic contact.
Claim 14
Dependent Claim 31 words
The process of claim 11 in which the relative surface areas of the p- and n-type regions are such that substantially equal rates of electron-hole pairs are generated in each portion.
Claim 15
Dependent Claim 27 words
The process of claim 5 in which the first portion comprises appropriately doped p-type semiconductor material provided with an ohmic contact and the second portion comprises metal.
Claim 16
Dependent Claim 27 words
The process of claim 5 in which the first portion comprises appropriately doped n-type semiconductor material provided with an ohmic contact and the second portion comprises metal.
Claim 17
Dependent Claim 41 words
The process of claim 5 in which the appropriately doped semiconductor material of a given conductivity type consists essentially of at least one p-doped member selected from the group consisting of Si, GaP, GaAs, InP, CuInS 2 and Cu 2 O.
Claim 18
Dependent Claim 43 words
The process of claim 5 in which the appropriately doped semiconductor material of a given conductivity consists essentially of at least one n-doped member selected from the group consisting of Si, CdS, TiO 2 , GaP, GaAs, CdSe, InP and CuInS 2 .
Claim 19
Dependent Claim 30 words
The process of claim 5 in which the diodes have an average particle size less than about 0.01 micrometer and form a solution of molecular-sized diodes in the reactant matrix.
Claim 20
Dependent Claim 29 words
The process of claim 5 in which the diodes have an average particle size of about 0.01 to 0.25 micrometer and form a colloidal suspension in the reactant matrix.
Claim 21
Dependent Claim 31 words
The process of claim 5 in which the diodes have an average particle size of about 0.25 micrometer to 1 mm and are suspended in the reactant matrix by external agitation.
Claim 22
Dependent Claim 27 words
The process of claim 5 in which the diodes have an average particle size greater than about 1 mm and are mechanically suspended in the reactant matrix.
Claim 23
Dependent Claim 55 words
The process of claim 5 in which the semiconductor material of each portion is thin enough to minimize the path length between the region where electron-hole pairs are created by action of the optical energy and the ohmic contact of the semiconductor material and thick enough to maintain sufficient optical absorption of the optical energy.
Claim 24
Dependent Claim 28 words
The process of claim 5 in which each ohmic contact to a semiconductor material forms a surface which is parallel to the illuminated surface at that semiconductor material.
Claim 25
Dependent Claim 193 words
A cyclical process for converting solar energy into chemical energy and thermal energy which comprises suspending an assembly of discrete photochemical diodes in a liquid matrix, the photochemical diodes comprising two portions, a first portion comprising at least one appropriately doped semiconductor material of a given conductivity type and provided with an ohmic contact over a portion thereof and a second portion comprising either metal which is joined to said first portion through said ohmic contact or at least one appropriately doped semiconductor material of a conductivity type opposite to that of the first portion, provided with an ohmic contact over a portion thereof and joined to said first portion through both said ohmic contacts, exposing the photochemical diodes and the liquid matrix to concentrated solar radiation, forming gaseous fuel from the liquid matrix and unreacted matrix material at high temperature, converting the thermal content of the high temperature matrix material into electricity by a thermal power generator and forming cooled matrix material, recovering the gaseous fuel from the cooled matrix material, adding fresh liquid matrix to the cooled matrix material, and recycling the matrix material for reexposure to the concentrated solar radiation.
Claim 26
Dependent Claim 193 words
A cyclical process for converting solar energy into chemical energy and thermal energy which comprises suspending an assembly of discrete photochemical diodes in a liquid matrix, the photochemical diodes comprising two portions, a first portion comprising at least one appropriately doped semiconductor material of a given conductivity type and provided with an ohmic contact over a portion thereof and a second portion comprising either metal which is joined to said first portion through said ohmic contact or at least one appropriately doped semiconductor material of a conductivity type opposite to that of the first portion, provided with an ohmic contact over a portion thereof and joined to said first portion through both said ohmic contacts, exposing the photochemical diodes and the liquid matrix to concentrated solar radiation, forming gaseous fuel from the liquid matrix and unreacted matrix material at high temperature, converting the thermal content of the high temperature matrix material into electricity by a thermal power generator and forming cooled matrix material, recovering the gaseous fuel from the cooled matrix material, adding fresh liquid matrix to the cooled matrix material, and recycling the matrix material for reexposure to the concentrated solar radiation.
Claim 27
Dependent Claim 17 words
The process of claim 23 in which the matrix comprises water and the gaseous fuel comprises hydrogen.
Claim 28
Dependent Claim 151 words
A process for generating hydrogen from a portion of a body of water using solar radiation comprising suspending an assembly of discrete photochemical diodes in the water, the photochemical diodes comprising two portions, a first portion comprising at least one appropriately doped semiconductor material of a given conductivity type and provided with an ohmic contact over a portion thereof and a second portion comprising either metal which is joined to said first portion through said ohmic contact or at least one appropriately doped semiconductor material of a conductivity type opposite to that of said first portion, provided with an ohmic contact over a portion thereof and joined to said first portion through both said ohmic contacts, confining the diodes to a fixed volume element by membranes permeable to the water and impermeable to the diodes, and collecting evolved hydrogen in a space above the water formed by a transparent polymer film.
Claim 29
Dependent Claim 151 words
A process for generating hydrogen from a portion of a body of water using solar radiation comprising suspending an assembly of discrete photochemical diodes in the water, the photochemical diodes comprising two portions, a first portion comprising at least one appropriately doped semiconductor material of a given conductivity type and provided with an ohmic contact over a portion thereof and a second portion comprising either metal which is joined to said first portion through said ohmic contact or at least one appropriately doped semiconductor material of a conductivity type opposite to that of said first portion, provided with an ohmic contact over a portion thereof and joined to said first portion through both said ohmic contacts, confining the diodes to a fixed volume element by membranes permeable to the water and impermeable to the diodes, and collecting evolved hydrogen in a space above the water formed by a transparent polymer film.
Claim 30
Dependent Claim 110 words
In combination: (a) a matrix of chemical reactants; and (b) an assembly of discrete photochemical diodes suspended in the reactant matrix, the photochemical diodes comprising two portions, a first portion comprising at least one appropriately doped semiconductor material of a given conductivity type and provided with an ohmic contact over a portion thereof and a second portion comprising either metal which is joined to said first portion through said ohmic contact or at least one appropriately doped semiconductor material of a conductivity type opposite to that of said first portion, provided with an ohmic contact over a portion thereof and joined to said first portion through both said ohmic contacts.
Claim 31
Dependent Claim 110 words
In combination: (a) a matrix of chemical reactants; and (b) an assembly of discrete photochemical diodes suspended in the reactant matrix, the photochemical diodes comprising two portions, a first portion comprising at least one appropriately doped semiconductor material of a given conductivity type and provided with an ohmic contact over a portion thereof and a second portion comprising either metal which is joined to said first portion through said ohmic contact or at least one appropriately doped semiconductor material of a conductivity type opposite to that of said first portion, provided with an ohmic contact over a portion thereof and joined to said first portion through both said ohmic contacts.
Claim 32
Dependent Claim 25 words
The combination of claim 26 in which the matrix of chemical reactants contains substances for exoergic chemical reactions catalyzed by the assembly of photochemical diodes.
Claim 33
Dependent Claim 25 words
The combination of claim 26 in which the matrix of chemical reactants contains substances for endoergic chemical reactions catalyzed by the assembly of photochemical diodes.
Claim 34
Dependent Claim 18 words
The combination of claim 26 further comprising means for impinging solar radiation on the assembly of photochemical diodes.
Claim 35
Dependent Claim 17 words
The combination of claim 26 in which the matrix of chemical reactants includes a solution comprising water.
Claim 36
Dependent Claim 18 words
The combination of claim 26 in which the matrix of chemical reactants includes a solution comprising hydrogen sulfide.
Claim 37
Dependent Claim 30 words
The combination of claim 26 in which the diodes have an average particle size less than about 0.01 micrometer and form a solution of molecular-sized diode in the reactant matrix.
Claim 38
Dependent Claim 29 words
The combination of claim 26 in which the diodes have an average particle size of about 0.01 to 0.25 micrometer and form a colloidal suspension in the reactant matrix.
Claim 39
Dependent Claim 31 words
The combination of claim 26 in which the diodes have an average particle size of about 0.25 micrometer to 1 mm and are suspended in the reactant matrix by external agitation.
Claim 40
Dependent Claim 27 words
The combination of claim 26 in which the diodes have an average particle size greater than about 1 mm and are mechanically suspended in the reactant matrix.
Claim 41
Dependent Claim 42 words
The combination of claim 26 in which the first portion of the diodes comprises appropriately doped p-type semiconductor material provided with an ohmic contact and the second portion of the diodes comprises appropriately doped n-type semiconductor material provided with an ohmic contact.
Claim 42
Dependent Claim 30 words
The combination of claim 26 in which the first portion of the diodes comprises appropriately doped p-type semiconductor material provided with an ohmic contact and the second portion comprises metal.
Claim 43
Dependent Claim 30 words
The combination of claim 26 in which the first portion of the diodes comprises appropriately doped n-type semiconductor material provided with an ohmic contact and the second portion comprises metal.
Claim 44
Dependent Claim 41 words
The combination of claim 26 in which the appropriately doped semiconductor material of a given conductivity type consists essentially of at least one p-doped member selected from the group consisting of Si, GaP, GaAs, InP, CuInS 2 and Cu 2 O.
Claim 45
Dependent Claim 44 words
The combination of claim 26 in which the appropriately doped semiconductor material of a given conductivity type consists essentially of at least one n-doped member selected from the group consisting of Si, CdS, TiO 2 , GaP, GaAs, CdSe, InP and CuInS 2 .

References Cited (Backward Citations)

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US3924139A Cited
US3914856A Cited
US3925212A Cited
US3956017A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1981-06-12 1981-12-12 1982-06-13 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1985-06-12 1985-12-12 1986-06-13 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1989-06-12 1989-12-12 1990-06-13 $7700.00 Window Closed / Lapsed

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