Patent US4381201A successfully refreshed from Google Patents.
US4381201A
Expired / Lapsed
US
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Method for production of semiconductor devices
Assignee: Fujitsu Ltd
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Filing: 1981-03-03
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Granted: 1983-04-26
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Expires: 2001-03-03
Abstract
Abstract Various improvements applicable to a method for production of a semiconductor device which is produced on a single crystalline semiconductor layer converted from a non-single crystalline semiconductor layer employing an energy ray irradiation process for conversion of non-single crystalline semiconductor to single crystalline semiconductor, including a process to make a scribing process more efficient realized by producing windows along scribe lines, a process for production of a planer type semiconductor device without damaging a converted single crystalline semiconductor layer realized by interposition of a field oxidation process and an energy ray irradiation process, a process enabling deep and uniform distribution of impurities without lateral diffusion in a semiconductor layer and a process for production of an embedded semiconductor resistor realized by employment of a mask made of a material not to allow radiated heat to pass therethrough, and a process for production of a mesa type semiconductor device not to allow discontinuity of wirings realized by employment of an energy ray irradiation process.
Inventors
- 👤 Junji Sakurai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 22:30
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10P; H10P34/00; H10P34/40; H10P34/42; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/003; Y10S148/09; Y10S148/091; Y10S148/123
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
112 words
A method for production of a semiconductor device comprising the steps of: (a) forming an insulating layer on the top surface of a semiconductor substrate; (b) forming a window in the insulating layer along a linear area defining crystal nuclei and a scribe line; (c) growing a non-single crystalline semiconductor layer on the top surface of the insulating layer; (d) irradiating the non-single crystalline semiconductor layer with an energy ray selected from a group including a photon beam, an ion beam and an electron beam, to form a single crystalline silicon layer in contact with the substrate at the crystal nuclei; and (e) forming semiconductor elements on the single crystalline silicon layer.
Claim 2
Independent Claim
112 words
A method for production of a semiconductor device comprising the steps of: (a) forming an insulating layer on the top surface of a semiconductor substrate; (b) forming a window in the insulating layer along a linear area defining crystal nuclei and a scribe line; (c) growing a non-single crystalline semiconductor layer on the top surface of the insulating layer; (d) irradiating the non-single crystalline semiconductor layer with an energy ray selected from a group including a photon beam, an ion beam and an electron beam, to form a single crystalline silicon layer in contact with the substrate at the crystal nuclei; and (e) forming semiconductor elements on the single crystalline silicon layer.
Claim 3
Independent Claim
93 words
A method for production of a semiconductor device comprising the steps of: (a) forming an insulating layer on a substrate; (b) growing a non-single crystalline semiconductor layer on the top surface of the insulator layer; (c) oxidizing the non-single crystalline semiconductor layer to form device regions defined by the termally oxidized polycrystalline silicon; and (d) irradiating the non-single crystalline semiconductor layer with an energy ray selected from a group including a photon beam, an ion beam and an electron beam, to convert the non-single crystalline semiconductor layer into a single crystalline semiconductor layer.
Claim 4
Independent Claim
93 words
A method for production of a semiconductor device comprising the steps of: (a) forming an insulating layer on a substrate; (b) growing a non-single crystalline semiconductor layer on the top surface of the insulator layer; (c) oxidizing the non-single crystalline semiconductor layer to form device regions defined by the termally oxidized polycrystalline silicon; and (d) irradiating the non-single crystalline semiconductor layer with an energy ray selected from a group including a photon beam, an ion beam and an electron beam, to convert the non-single crystalline semiconductor layer into a single crystalline semiconductor layer.
Claim 5
Independent Claim
121 words
A method for production of a semiconductor device having a non-single crystalline semiconductor layer of a first conductivity type formed on a substrate, comprising the steps of: (a) selectively covering an area of the non-single crystalline semiconductor layer with a mask made of a material which prevents radiated heat supplied in the form of radiation from passing therethrough; (b) depositing impurities having a second conductivity type, in the uncovered area of the non-single crystalline semiconductor layer; and (c) irradiating the uncovered area of the non-single crystalline semiconductor layer with an energy ray selected from a group including a photon beam, an ion beam and an electron beam, to diffuse the impurities into the uncovered area of the non-single crystalline semiconductor layer.
Claim 6
Independent Claim
121 words
A method for production of a semiconductor device having a non-single crystalline semiconductor layer of a first conductivity type formed on a substrate, comprising the steps of: (a) selectively covering an area of the non-single crystalline semiconductor layer with a mask made of a material which prevents radiated heat supplied in the form of radiation from passing therethrough; (b) depositing impurities having a second conductivity type, in the uncovered area of the non-single crystalline semiconductor layer; and (c) irradiating the uncovered area of the non-single crystalline semiconductor layer with an energy ray selected from a group including a photon beam, an ion beam and an electron beam, to diffuse the impurities into the uncovered area of the non-single crystalline semiconductor layer.
Claim 7
Independent Claim
76 words
A method of production of a semiconductor device comprising the steps of: (a) selectively removing a region of a non-single crystalline semiconductor layer grown on an insulator substrate to form mesas of the non-single crystalline semiconductor layer; and (b) converting the mesas into single crystalline mesas and rounding the sides of the mesas by irradiating the mesas with an energy ray selected from a group including a photon beam, an ion beam and an electron beam.
Claim 8
Independent Claim
76 words
A method of production of a semiconductor device comprising the steps of: (a) selectively removing a region of a non-single crystalline semiconductor layer grown on an insulator substrate to form mesas of the non-single crystalline semiconductor layer; and (b) converting the mesas into single crystalline mesas and rounding the sides of the mesas by irradiating the mesas with an energy ray selected from a group including a photon beam, an ion beam and an electron beam.
Claim 9
Dependent Claim
28 words
A method for production of a semiconductor device as set forth in claim 1 or 2, wherein the top surface of said semiconductor substrate is planar and smooth.
Claim 10
Dependent Claim
27 words
A method for production of a semiconductor device as set forth in claim 1, further comprising the step of splitting said semiconductor substrate at said linear area.
Claim 11
Dependent Claim
32 words
A method for production of a semiconductor device as set forth in claim 6, wherein said substrate is split by means selected from a group comprising a laser and a diamond cutter.
Claim 12
Dependent Claim
39 words
A method for production of a semiconductor device as set forth in claim 1, further comprising the step of selectively, thermally oxidizing the single crystalline silicon layer to form device regions defined by the oxidized single crystalline silicon layer.
Claim 13
Dependent Claim
41 words
A method for production of a semiconductor device as set forth in claim 2 or 8, further comprising the step of forming one of a transistor and a resistor in respective ones of the device regions, to form a semiconductor device.
Claim 14
Dependent Claim
104 words
A method for production of a semiconductor device as set forth in claim 9, further comprising the steps of: (i) forming another insulating layer on the semiconductor device: (ii) forming another non-single crystalline semiconductor layer on the another insulating layer; (iii) converting the another non-single crystalline semiconductor layer into the another single crystalline semiconductor layer by irradiating the non-single crystalline layer with an energy ray selected from the group comprising a photon beam, an ion beam and an electron beam; (iv) forming another semiconductor device on the another single crystalline semiconductor layer; and (v) repeat steps (i) thru (iv) a predetermined number of times.
Claim 15
Independent Claim
121 words
A method for production of a semiconductor device comprising the steps of: (a) forming an insulator layer on a substrate; (b) forming a polycrystalline silicon layer on the insulator layer; (c) selectively, thermally oxidizing the polycrystalline silicon layer to form device regions defined by the thermally oxidized polycrystalline silicon layer; (d) irradiating the polycrystalline silicon layer with an energy ray selected from a group including a photon beam, an ion beam and an electron beam, to form super-saturated molten polycrystalline silicon device regions; (e) rapidly cooling the molten polycrystalline silicon device regions; (f) forming one of a transistor and a resistor in respective ones of the device regions to form a semiconductor device; and (g) forming wiring on the semiconductor device.
Claim 16
Independent Claim
121 words
A method for production of a semiconductor device comprising the steps of: (a) forming an insulator layer on a substrate; (b) forming a polycrystalline silicon layer on the insulator layer; (c) selectively, thermally oxidizing the polycrystalline silicon layer to form device regions defined by the thermally oxidized polycrystalline silicon layer; (d) irradiating the polycrystalline silicon layer with an energy ray selected from a group including a photon beam, an ion beam and an electron beam, to form super-saturated molten polycrystalline silicon device regions; (e) rapidly cooling the molten polycrystalline silicon device regions; (f) forming one of a transistor and a resistor in respective ones of the device regions to form a semiconductor device; and (g) forming wiring on the semiconductor device.
Claim 17
Independent Claim
160 words
A method for production of a semiconductor device comprising the steps of: (a) forming an insulating layer on a silicon substrate; (b) forming a first semiconductor layer on the insulating layer; (c) implanting first ions of a first conductivity type into the first semiconductor layer; (d) converting the first semiconductor layer into a semiconductor layer having a periodic structure by irradiating the first semiconductor layer with an energy ray selected from a group comprising a photon beam, an ion beam and an electron beam; (e) selectively forming a mask on the first semiconductor layer, the mask made of a material which prevents radiated heat from radiating to the first semiconductor layer; (f) selectively implanting second ions having a second conductivity type into selected areas of the first semiconductor layer defined by the mask; and (g) annealing the selected areas of the first semiconductor layer to uniformly diffuse the second ions into the first semiconductor layer in self-alignment with the mask.
Claim 18
Independent Claim
160 words
A method for production of a semiconductor device comprising the steps of: (a) forming an insulating layer on a silicon substrate; (b) forming a first semiconductor layer on the insulating layer; (c) implanting first ions of a first conductivity type into the first semiconductor layer; (d) converting the first semiconductor layer into a semiconductor layer having a periodic structure by irradiating the first semiconductor layer with an energy ray selected from a group comprising a photon beam, an ion beam and an electron beam; (e) selectively forming a mask on the first semiconductor layer, the mask made of a material which prevents radiated heat from radiating to the first semiconductor layer; (f) selectively implanting second ions having a second conductivity type into selected areas of the first semiconductor layer defined by the mask; and (g) annealing the selected areas of the first semiconductor layer to uniformly diffuse the second ions into the first semiconductor layer in self-alignment with the mask.
Claim 19
Dependent Claim
53 words
A method for production of a semiconductor device as set forth in claim 12, further comprising the step of: before step (e), forming a layer comprising a material which does not substantially react with the first semiconductor layer on the first semiconductor layer, and wherein in step (e), the mask material comprises aluminum.
Claim 20
Dependent Claim
36 words
A method for production of a semiconductor device as set forth in claim 12, wherein, in step (b) the first semiconductor layer comprises one of a single crystalline semiconductor, an amorphous semiconductor and a polycrystalline semiconductor.
Claim 21
Dependent Claim
230 words
A method for production of a semiconductor device as set forth in claim 12 or 13, further comprising the steps of: (1) forming another insulating layer on the semiconductor device; (2) forming another semiconductor layer on the another insulating layer; (3) implanting first ions having the first conductivity type into the another semiconductor layer; (4) converting the another semiconductor layer into another semiconductor layer having a periodic structure by irradiating the another semiconductor layer with an energy ray selected from a group comprising a photon beam, an ion beam and an electron beam; (5) selectively forming a mask on the another semiconductor layer having a periodic structure, the mask made of a material which prevents radiated heat from radiating to the another semiconductor layer; (6) selectively implanting second ions having the second conductivity type into selected areas of the another semiconductor layer having a periodic structure defined by the mask; (7) annealing the selected areas of the semiconductor layer having a periodic structure to uniformly diffuse the second ions into the another semiconductor layer in self-alignment with the mask; (8) forming one of a transistor and a resistor in respective ones of the selected areas of the another semiconductor layer having a periodic structure, whereby another semiconductor device is formed; (9) forming wirings on the another semiconductor device; and (10) repeating steps (1) through (9) a predetermined number of times.
Claim 22
Dependent Claim
30 words
A method for production of a semiconductor device as set forth in claim 13, wherein the material which does not substantially react with the first semiconductor layer comprises silicon dioxide.
Claim 23
Independent Claim
106 words
A method for production of a semiconductor device comprising the steps of: (a) thermally oxidizing a substrate; (b) forming a first polycrystalline silicon layer on the thermally oxidized surface of the substrate; (c) forming mesas comprising the first polycrystalline silicon layer; (d) converting the mesas into a single crystalline semiconductor mesas by irradiating the mesas with an energy ray selected from the group comprising a photon beam, an ion beam and an electron beam; (e) forming one of a transistor and a resistor in respective ones of the mesas; (f) forming a wiring layer operatively connecting selected one of the mesas to form a semiconductor device.
Claim 24
Independent Claim
106 words
A method for production of a semiconductor device comprising the steps of: (a) thermally oxidizing a substrate; (b) forming a first polycrystalline silicon layer on the thermally oxidized surface of the substrate; (c) forming mesas comprising the first polycrystalline silicon layer; (d) converting the mesas into a single crystalline semiconductor mesas by irradiating the mesas with an energy ray selected from the group comprising a photon beam, an ion beam and an electron beam; (e) forming one of a transistor and a resistor in respective ones of the mesas; (f) forming a wiring layer operatively connecting selected one of the mesas to form a semiconductor device.
Claim 25
Dependent Claim
29 words
A method for production of a semiconductor device as set forth in claim 17, wherein step (a) further comprises forming windows in the thermally oxidized surface of the substrate.
Claim 26
Dependent Claim
126 words
A method for production of a semiconductor device according to claim 17 or 18 further comprising the steps of: (g) forming an insulator layer on the surface of the semiconductor device; (h) forming another polycrystalline silicon layer on the insulator layer; (i) forming mesas comprising the another polycrystalline silicon layer; (j) converting the mesas into a single crystalline semiconductor by irradiating the mesas with an energy ray selected from the group comprising a photon beam, an ion beam and an electron beam; (k) forming one of a transistor and a resistor in respective of ones of the mesas; (l) forming a wiring layer electrically connecting selected ones of the mesas, to form another semiconductor device; (m) repeating steps (g) through (l) a predetermined number of times.
Claim 27
Independent Claim
126 words
A method for production of a semiconductor device comprising the steps of: (a) selectively, thermally oxidizing first regions of a substrate; (b) forming a polycrystalline silicon semiconductor layer on the substrate; (c) selectively oxidizing regions of the polycrystalline silicon semiconductor layer overlying the first regions of the substrate, to define polycrystalline silicon device regions; (d) converting the polycrystalline silicon device regions into a single crystalline layer by irradiating the polycrystalline device regions with an energy beam selected from the group comprising a photon beam, an ion beam and an electron beam; (e) selectively forming one of a transistor and a resistor in respective ones of the device regions; and (f) forming a wiring layer connecting selected ones of the device regions, to form a semiconductor device.
Claim 28
Independent Claim
126 words
A method for production of a semiconductor device comprising the steps of: (a) selectively, thermally oxidizing first regions of a substrate; (b) forming a polycrystalline silicon semiconductor layer on the substrate; (c) selectively oxidizing regions of the polycrystalline silicon semiconductor layer overlying the first regions of the substrate, to define polycrystalline silicon device regions; (d) converting the polycrystalline silicon device regions into a single crystalline layer by irradiating the polycrystalline device regions with an energy beam selected from the group comprising a photon beam, an ion beam and an electron beam; (e) selectively forming one of a transistor and a resistor in respective ones of the device regions; and (f) forming a wiring layer connecting selected ones of the device regions, to form a semiconductor device.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-04-25 | 1986-10-25 | 1987-04-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-04-25 | 1990-10-25 | 1991-04-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-04-25 | 1994-10-25 | 1995-04-26 | $7700.00 | Window Closed / Lapsed |