Abstract A method for producing boundary layer semiconductor ceramic capacitors comprises firing shaped bodies of a semiconductor ceramic material in a neutral or reducing atmosphere, heat-treating the resultant semiconductor ceramic bodies to insulatorize crystal grain boundaries of the semiconductor ceramics, and providing opposite electrodes on surfaces of the heat-treated semiconductor ceramic bodies and is characterized in that said heat-treating is carried out by heating the semiconductor ceramic bodies together with power of an insulatorizing agent with stirring in a neutral or oxidizing atmosphere at a temperature ranging from 950° to 1300° C. As a semiconductor ceramic material, there may be used semiconductor ceramics of a barium titanate system, or of a strontium titanate system, or a complex semiconductor ceramic mainly comprising barium titanate or calcium titanate and strontium titanate. This method enables one to produce boundary layer semiconductor ceramics as good quality with small standard deviation and high yield.
A method for producing boundary layer semiconductor ceramic capacitors, comprising the steps of: firing shaped bodies of a semiconductor ceramic material in a neutral or reducing atmosphere; heat-treating the resultant semiconductor ceramic bodies to insulatorize crystal grain boundaries of the semiconductor ceramics; and providing opposite electrodes on surfaces of the heat-treated semiconductor ceramic bodies; characterized in that said heat-treating is carried out by heating the semiconductor ceramic bodies together with powder of the insulatorizing agent with stirring in a neutral or oxidizing atmosphere.
Claim 2
Independent Claim
83 words
A method for producing boundary layer semiconductor ceramic capacitors, comprising the steps of: firing shaped bodies of a semiconductor ceramic material in a neutral or reducing atmosphere; heat-treating the resultant semiconductor ceramic bodies to insulatorize crystal grain boundaries of the semiconductor ceramics; and providing opposite electrodes on surfaces of the heat-treated semiconductor ceramic bodies; characterized in that said heat-treating is carried out by heating the semiconductor ceramic bodies together with powder of the insulatorizing agent with stirring in a neutral or oxidizing atmosphere.
Claim 3
Dependent Claim
18 words
The method according to claim 1 wherein the semiconductor ceramic material is a barium titanate system semiconductor ceramic.
Claim 4
Dependent Claim
18 words
The method according to claim 1 wherein the semiconductor ceramic material is a strontium titanate system semiconductor ceramic.
Claim 5
Dependent Claim
23 words
The method according to claim 1 wherein the semiconductor ceramic material is a complex semiconductor ceramics mainly comprising barium titanate and strontium titanate.
Claim 6
Dependent Claim
23 words
The method according to claim 1 wherein the semiconductor ceramic material is a complex semiconductor ceramics mainly comprising strontium titanate and calcium titanate.
Claim 7
Dependent Claim
21 words
The method according to claim 1 wherein the heat-treating is carried out at a temperature ranging from 950° to 1300° C.
Claim 8
Dependent Claim
17 words
The method of claim 6 wherein the semiconductor ceramic material is a strontium titanate system semiconductor ceramic.
Claim 9
Dependent Claim
21 words
The method of claim 7 wherein the insulatorizing agent comprises Bi 2 O 3 , Pb 3 O 4 and CuO.
Claim 10
Dependent Claim
23 words
The method of claim 8 wherein said heat-treating is carried out in a vessel and said stirring is effected by agitating said vessel.
Claim 11
Dependent Claim
23 words
The method of claim 1 wherein said heat-treating is carried out in a vessel and said stirring is effected by agitating said vessel.