Patent US4377904A successfully refreshed from Google Patents.
US4377904A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating a narrow band-gap semiconductor CCD imaging device
Assignee: DRS Infrared Technologies LP
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Filing: 1980-09-09
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Granted: 1983-03-29
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Expires: 2000-09-09
Abstract
Abstract A monolithic charge-coupled infrared imaging device (CCIRID) is fabricated on N-type HgCdTe. A native oxide layer on the semiconductor is used, in combination with ZnS to provide first level insulation. An opaque field plate over first level insulation is provided for signal channel definition. Second level insulation (ZnS) is substantially thicker than the first level, and is provided with a stepped or sloped geometry under the first level gates. Input and output diodes are provided with MIS guard rings to increase breakdown voltages.
Inventors
- 👤 Richard A. Chapman
- 👤 Dennis D. Buss
- 👤 Michael A. Kinch
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:38
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/111; H10D62/00; H10D62/80; H10D62/86; H10D62/862; H10D64/60; H10D64/66; H10D64/665; H10F; H10F39/00; H10F39/011; H10F39/022; H10F39/10; H10F39/12; H10F39/15; H10F39/157; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; Y; Y10; Y10S; Y10S148/00; Y10S148/084
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
176 words
A process for fabricating an infrared imager comprising the steps of: (a) oxidizing the surface of a monocrystalline ternary alloy semiconductor body to form an oxide layer 500-1000 angstroms thick; (b) selectively removing predetermined portions of said oxide layer to form apertures therein; (c) forming suitable doped regions in said apertures to form junction diodes with the ternary alloy semiconductor surface; (d) depositing a layer of zinc sulfide to cover the oxide-conductor composite layer; (e) depositing and patterning a channel-stop conductor on said zinc sulfide to define a channel; (f) depositing and patterning a second zinc sulfide layer to overlap said channel-stop conductor; (g) depositing and patterning a first plurality of metal gates on said second zinc sulfide layer; (h) depositing a third layer of zinc sulfide to cover said gate; (i) depositing and patterning a second plurality of metal gates on said third zinc sulfide layer; (j) selectively removing portions of each zinc sulfide layer to form contact vias exposing selected gate and substrate locations; and (k) then forming conductive contacts to said exposed locations.
Claim 2
Dependent Claim
176 words
A process for fabricating an infrared imager comprising the steps of: (a) oxidizing the surface of a monocrystalline ternary alloy semiconductor body to form an oxide layer 500-1000 angstroms thick; (b) selectively removing predetermined portions of said oxide layer to form apertures therein; (c) forming suitable doped regions in said apertures to form junction diodes with the ternary alloy semiconductor surface; (d) depositing a layer of zinc sulfide to cover the oxide-conductor composite layer; (e) depositing and patterning a channel-stop conductor on said zinc sulfide to define a channel; (f) depositing and patterning a second zinc sulfide layer to overlap said channel-stop conductor; (g) depositing and patterning a first plurality of metal gates on said second zinc sulfide layer; (h) depositing a third layer of zinc sulfide to cover said gate; (i) depositing and patterning a second plurality of metal gates on said third zinc sulfide layer; (j) selectively removing portions of each zinc sulfide layer to form contact vias exposing selected gate and substrate locations; and (k) then forming conductive contacts to said exposed locations.
Claim 3
Dependent Claim
15 words
A method as in claim 1 wherein said ternary alloy semiconductor is oxidized by anodization.
Claim 4
Dependent Claim
16 words
A method as in claim 1 wherein said patterning steps are done by inverse photoresist processing.
Claim 5
Dependent Claim
25 words
A method as in claim 1 wherein said junction diodes are formed by selectively out-diffusing the more volatile element from the ternary alloy semiconductor surface.
Claim 6
Dependent Claim
13 words
A method as in claim 1 wherein said conductors and gates are aluminum.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-03-28 | 1986-09-27 | 1987-03-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-03-28 | 1990-09-27 | 1991-03-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-03-28 | 1994-09-27 | 1995-03-29 | $7700.00 | Window Closed / Lapsed |