Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
205 words
A method of forming a densified silicon nitride article which comprises: forming a reaction bonded article of moderate density, said reaction bonded article having a primary phase of substantially pure grains of silicon nitride surrounded by a secondary grain boundary phase which contains silicon nitride, silicon dioxide and a yttrium oxide densification aid incorporated in the reaction bonded article of moderate density either in their pure forms or interacted with one another; packing said reaction bonded silicon nitride article of moderate density in a packing powder which contains 15 weight percent SiO 2 , 9 weight percent Y 2 O 3 , 25 weight percent BN and 51 weight percent silicon nitride; and heating said reaction bonded article of moderate density in said packing powder in a nitrogen pressure of 0.206 MPa for four hours at 1900° C. and in a nitrogen pressure of 2.06 MPa for two hours at 1950° C., whereby interaction of said secondary grain boundary phase may take place with the pure compounds contained in said packing powder whereby a new grain boundary phase is developed about the substantially pure grains of silicon nitride, which new grain boundary phase is a unitary phase of Y 2 Si 2 O 7 .
Claim 2
Independent Claim
205 words
A method of forming a densified silicon nitride article which comprises: forming a reaction bonded article of moderate density, said reaction bonded article having a primary phase of substantially pure grains of silicon nitride surrounded by a secondary grain boundary phase which contains silicon nitride, silicon dioxide and a yttrium oxide densification aid incorporated in the reaction bonded article of moderate density either in their pure forms or interacted with one another; packing said reaction bonded silicon nitride article of moderate density in a packing powder which contains 15 weight percent SiO 2 , 9 weight percent Y 2 O 3 , 25 weight percent BN and 51 weight percent silicon nitride; and heating said reaction bonded article of moderate density in said packing powder in a nitrogen pressure of 0.206 MPa for four hours at 1900° C. and in a nitrogen pressure of 2.06 MPa for two hours at 1950° C., whereby interaction of said secondary grain boundary phase may take place with the pure compounds contained in said packing powder whereby a new grain boundary phase is developed about the substantially pure grains of silicon nitride, which new grain boundary phase is a unitary phase of Y 2 Si 2 O 7 .
Claim 3
Independent Claim
212 words
A method of forming a densified silicon nitride article which comprises: forming a reaction bonded article of moderate density, said reaction bonded article having a primary phase of substantially pure grains of silicon nitride surrounded by a secondary grain boundary phase which contains silicon nitride, silicon dioxide and a yttrium oxide densification and incorporated in the reaction bonded article of moderate density either in their pure forms or interacted with one another; packing said reaction bonded silicon nitride article of moderate density in a packing powder which contains 5 weight percent SiO 2 , 9 weight percent Y 2 O 3 , 25 weight percent BN and 61 weight percent silicon nitride; and heating said reaction bonded article of moderate density in said packing powder in a nitrogen pressure of 0.206 MPa for hour hours at 1900° C. and in a nitrogen pressure of 2.06 MPa for two hours at 1950° C., whereby interaction of said secondary grain boundary phase may take place with the pure compounds contained in said packing powder whereby a new grain boundary phase is developed about the substantially pure grains of silicon nitride, which new grain boundary phase is a unitary phase of H phase composition Si 3 N 4 /4SiO 2 /5Y 2 O 3 .
Claim 4
Independent Claim
212 words
A method of forming a densified silicon nitride article which comprises: forming a reaction bonded article of moderate density, said reaction bonded article having a primary phase of substantially pure grains of silicon nitride surrounded by a secondary grain boundary phase which contains silicon nitride, silicon dioxide and a yttrium oxide densification and incorporated in the reaction bonded article of moderate density either in their pure forms or interacted with one another; packing said reaction bonded silicon nitride article of moderate density in a packing powder which contains 5 weight percent SiO 2 , 9 weight percent Y 2 O 3 , 25 weight percent BN and 61 weight percent silicon nitride; and heating said reaction bonded article of moderate density in said packing powder in a nitrogen pressure of 0.206 MPa for hour hours at 1900° C. and in a nitrogen pressure of 2.06 MPa for two hours at 1950° C., whereby interaction of said secondary grain boundary phase may take place with the pure compounds contained in said packing powder whereby a new grain boundary phase is developed about the substantially pure grains of silicon nitride, which new grain boundary phase is a unitary phase of H phase composition Si 3 N 4 /4SiO 2 /5Y 2 O 3 .