Superluminescent LED with efficient coupling to optical waveguide

Claim 2

In combination, an edge-emitting, superluminescent light-emitting diode having an active layer with a pumped region of length L, and an output optical waveguide system having a core diameter greater than the width of the light-emitting region of said diode and a numerical aperture of NA f , characterized in that the refractive indexes in said active layer adjacent to said pumped region in said superluminescent light-emitting diode are chosen to provide lateral confinement of light in the active layer of said diode to a waveguide region having a width D and a lateral numerical aperture NA g substantially equal to the numerical aperture NA f of said output optical waveguide system, the parameter nD/2L being much less than the numerical aperture, NA g where n is the effective refractive index in the light-emitting region of said diode.

Claim 3

The combination as defined in claim 1 wherein said superluminescent light-emitting diode is further characterized in that the lateral confinement of light is achieved by a ridge structure that is present only over the light-emitting region of said light-emitting diode.

Claim 4

The combination as defined in claim 2 wherein the active layer of said superluminescent light-emitting diode is chemically composed of elements from the set including indium, gallium, arsenic and phosphorous.

Claim 5

The combination as defined in claim 3 wherein said ridge structure includes an indium phosphide layer epitaxially grown on said active layer.

Claim 6

The combination as defined in claim 1 wherein said superluminescent light-emitting diode has an antireflection coating over the light-emitting edge of said diode.

Claim 7

A superluminescent light-emitting diode comprising a substrate having at least one bottom epitaxial layer grown on one surface of said substrate, and a first contact bonded to an opposite surface of said substrate, an active layer epitaxially grown on said at least one bottom epitaxial layer, at least one top epitaxial layer grown on said active layer with a carrier type of polarity opposite to that of said at least one bottom layer and etched to provide a ridge type structure having a length L over at least a portion of said active layer, a second contact bonded to the top of said ridge thereby creating a strip light-emitting region in said active layer when current is applied to said first and second contacts, the thickness of said active layer and elements in said at least one top and bottom epitaxial layers being chosen such that the light is laterally confined in said active layer to a width of D with a numerical aperture NA g , said width D and length L being chosen such that the parameter nD/2L is much less than said NA g where n is the index of refraction in the active region of said active layer.

Claim 8

A superluminescent light-emitting diode comprising a substrate having at least one bottom epitaxial layer grown on one surface of said substrate, and a first contact bonded to an opposite surface of said substrate, an active layer epitaxially grown on said at least one bottom epitaxial layer, at least one top epitaxial layer grown on said active layer with a carrier type of polarity opposite to that of said at least one bottom layer and etched to provide a ridge type structure having a length L over at least a portion of said active layer, a second contact bonded to the top of said ridge thereby creating a strip light-emitting region in said active layer when current is applied to said first and second contacts, the thickness of said active layer and elements in said at least one top and bottom epitaxial layers being chosen such that the light is laterally confined in said active layer to a width of D with a numerical aperture NA g , said width D and length L being chosen such that the parameter nD/2L is much less than said NA g where n is the index of refraction in the active region of said active layer.

Claim 9

A superluminescent light-emitting diode as defined in claim 6 wherein said at least one bottom epitaxial layer and said at least one top epitaxial layer are composed of indium phosphide, and said active layer has a thickness of about 0.6 micrometers and is composed of elements from the set consisting of indium, gallium, arsenic, and phosphorous.