US4024559A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electroluminescent diodes and a method of manufacturing same
Assignee: Thales SA
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Filing: 1976-01-26
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Granted: 1977-05-17
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Expires: 1996-01-26
Abstract
Abstract The present invention relates to a novel electroluminescent diode. Said diode comprises, inserted in one of the elements of the junction, a zone of the same conductivity type as said element and forming a junction with the other element. Said zone has a forbidden bandwidth which is less than those of the two elements, and which, for a given voltage, is the emissive part of the diode. The invention is applicable in particular to fiber optic telecommunications.
Inventors
- 👤 Beaudouin de Cremoux
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 22:25
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/819; H10H20/821; H10H20/01; H10H20/011; H10H20/013; H10H20/811; H10H20/822; H10H20/824
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
110 words
An electroluminescent diode comprising a first and a second semiconductor element having respectively a first and a second type of conductivity, said second type being opposite to the first, said elements forming a rectifying junction, said first element having a central zone and a peripheral zone, a semiconductor zone being inserted in said central zone having said first type of conductivity, said semiconductor zone being made of a material having a band gap, narrower than those of said first and second elements, and terminal contact means over surfaces of said first and second elements to supply a voltage such that only said semiconductor zone is capable of emitting light rays.
Claim 2
Dependent Claim
110 words
An electroluminescent diode comprising a first and a second semiconductor element having respectively a first and a second type of conductivity, said second type being opposite to the first, said elements forming a rectifying junction, said first element having a central zone and a peripheral zone, a semiconductor zone being inserted in said central zone having said first type of conductivity, said semiconductor zone being made of a material having a band gap, narrower than those of said first and second elements, and terminal contact means over surfaces of said first and second elements to supply a voltage such that only said semiconductor zone is capable of emitting light rays.
Claim 3
Dependent Claim
17 words
A diode as claimed in claim 1, wherein said two elements are made on same first material.
Claim 4
Dependent Claim
27 words
A diode as claimed in claim 2, wherein said first material has the chemical formula Ga 1 -x Al x As where 0.2 < x < 0.4
Claim 5
Dependent Claim
33 words
A diode as claimed in claim 3, wherein said zone is made of a second material having the chemical formula Ga 1 -y Al y A s where 0 ≦ y < 0.1.
Claim 6
Dependent Claim
24 words
A diode as claimed in claim 4, wherein the two elements have a doping concentration of the order of 10 18 at/cm 3 .
References Cited (Backward Citations)
US3855607A
Cited
US3936855A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-05-16 | 1980-11-15 | 1981-05-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-05-16 | 1984-11-15 | 1985-05-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-05-16 | 1988-11-15 | 1989-05-17 | $7700.00 | Window Closed / Lapsed |