Materials and methods for plasma etching of oxides and nitrides of silicon

Claim 2

In a method for etching a layer of inorganic insulating material formed on a semiconductor wafer and containing silicon as the principal metallic element, the steps of: disposing said wafer on one of a pair of electrode structures in a closed chamber; communicating into said chamber a reactive gas mixture comprising principally a fluorocarbon gas doped with a preselected quantity of carbon dioxide; and supplying radio frequency electrical energy to one of said electrode structures to create a plasma of said reactive gas mixture for chemically attacking said insulating material.

Claim 3

The method of claim 1, wherein said wafer is disposed on the cathode within the closed chamber of a reactive ion etching system; and said fluorocarbon gas is doped with carbon dioxide in the range of about 1-50 percent by volume.

Claim 4

The method of claim 2, wherein said chamber is maintained at a pressure in the range of about 20-100 millitorr; and said radio frequency electrical energy is supplied at a power level which creates a power density in the range of about 0.10-0.30 watts/cm 2 .

Claim 5

The method of claim 3, wherein said reactive gas mixture is supplied to said chamber at a flow rate sufficient to provide a residence time of said reactive gas mixture in the range of 1-60 seconds.

Claim 6

The method of claim 2 adapted for etching substantially vertical sidewall patterns into said layer of insulating material in the presence of an overlying patterned layer of organic photoresist material to expose corresponding regions of a layer of silicon on said wafer, wherein said fluorocarbon gas is CHF 3 and said carbon dioxide doping is in the range of about 8-12 percent by volume; said chamber is maintained at a pressure in the range of about 40-90 millitorr; said gas mixture is supplied to said chamber at a flow rate which produces a residence time of activated species in the range of about 6-30 seconds; and said radio frequency electrical energy is supplied at a power level which creates a power density in the range of about 0.18-0.26 watts/cm 2 .

Claim 7

The method of claim 2 adapted for either etching back a composite layer of said inorganic insulating material and an organic insulating material or for etching slanted side wall patterns into said layer of organic insulating material in the presence of an overlying patterned layer of organic photoresist material, wherein said carbon dioxide doping in said reactive gas mixture is in the range of about 30-50 percent by volume.

Claim 8

In a method for forming a pattern of apertures with substantially straight side walls in a layer of inorganic insulating material formed on a semiconductor wafer and comprising silicon as the principal metallic element therein, the steps of: forming a layer of photoresist on said insulating material layer; exposing preselected regions of said photoresist layer to preselected electromagnetic radiation to write a mask pattern therein; developing said written photoresist layer with a preselected developing solution; disposing said sustrate on the cathode structure of a reactive ion etching chamber without postbaking said developed photoresist layer; and simultaneously supplying radio frequency electrical energy to said cathode structure at a power level which creates a power density in the range of about 0.18-0.26 watts/cm 2 and supplying to said chamber a reactive gas mixture comprising principally CHF 3 doped with carbon dioxide in the range of 5-15 percent by volume while maintaining said chamber at a pressure in the range of about 40-80 millitorr, said reactive gas mixture being supplied at a total gas flow rate which produces a residence time of activated species in the range of 6-30 seconds.

Claim 9

In a method for forming a pattern of apertures with substantially straight side walls in a layer of inorganic insulating material formed on a semiconductor wafer and comprising silicon as the principal metallic element therein, the steps of: forming a layer of photoresist on said insulating material layer; exposing preselected regions of said photoresist layer to preselected electromagnetic radiation to write a mask pattern therein; developing said written photoresist layer with a preselected developing solution; disposing said sustrate on the cathode structure of a reactive ion etching chamber without postbaking said developed photoresist layer; and simultaneously supplying radio frequency electrical energy to said cathode structure at a power level which creates a power density in the range of about 0.18-0.26 watts/cm 2 and supplying to said chamber a reactive gas mixture comprising principally CHF 3 doped with carbon dioxide in the range of 5-15 percent by volume while maintaining said chamber at a pressure in the range of about 40-80 millitorr, said reactive gas mixture being supplied at a total gas flow rate which produces a residence time of activated species in the range of 6-30 seconds.

Claim 10

In a method for forming a pattern of apertures with substantially sloping side walls in a layer of inorganic insulating material formed on a semiconductor wafer and comprising silicon as the principal metallic element therein, the steps of: forming a layer of photoresist on said insulating material layer; exposing preselected regions of said photoresist layer to preselected electromagnetic radiation to write a mask pattern therein; developing said written photoresist layer with a preselected developing solution to produce apertures therein corresponding to said written mask pattern; disposing said substrate on the cathode structure of a reactive ion etching chamber without postbaking said developed photoresist layer; and simultaneously applying radio frequency electrical energy to said cathode structure at a power level which creates a power density in the range of about 0.18-0.26 watts/cm 2 and supplying to said chamber a reactive gas mixture comprising principally a fluorocarbon gas heavily doped with one or more oxygen plasma forming gas constituents, the concentration of said oxygen plasma forming gas being selected at a value in the range of 20-50 percent to produce a predetermined etch rate ratio of said insulating material to said photoresist thereby to control the angle of said sloping side wall formed in said insulating material.

Claim 11

In a method for forming a pattern of apertures with substantially sloping side walls in a layer of inorganic insulating material formed on a semiconductor wafer and comprising silicon as the principal metallic element therein, the steps of: forming a layer of photoresist on said insulating material layer; exposing preselected regions of said photoresist layer to preselected electromagnetic radiation to write a mask pattern therein; developing said written photoresist layer with a preselected developing solution to produce apertures therein corresponding to said written mask pattern; disposing said substrate on the cathode structure of a reactive ion etching chamber without postbaking said developed photoresist layer; and simultaneously applying radio frequency electrical energy to said cathode structure at a power level which creates a power density in the range of about 0.18-0.26 watts/cm 2 and supplying to said chamber a reactive gas mixture comprising principally a fluorocarbon gas heavily doped with one or more oxygen plasma forming gas constituents, the concentration of said oxygen plasma forming gas being selected at a value in the range of 20-50 percent to produce a predetermined etch rate ratio of said insulating material to said photoresist thereby to control the angle of said sloping side wall formed in said insulating material.

Claim 14

The method of claim 9, wherein said radio frequency energy is supplied to said cathode structure at a power level which creates a power density in the range of about 0.18-0.26 watts/cm 2 ; said chamber is maintained at a pressure in the range of about 40-80 millitorr; and said reactive gas mixture is supplied at a total gas flow rate which produces a residence time of activated species in the range of about 6-30 seconds.

Claim 16

A reactive gas mixture adapted to be used in a reactive ion system for etching silicon nitride or silicon oxide layers at relatively high etch rates with high etch rate selectivity for both an underlying layer of silicon and an overlying layer of photoresist, said mixture comprising principally CHF 3 doped with carbon dioxide in the range of about 5-15 percent by volume.

Claim 17

A reactive gas mixture adapted to be used in a reactive ion system for etching silicon nitride or silicon oxide layers at relatively high etch rates with high etch rate selectivity for both an underlying layer of silicon and an overlying layer of photoresist, said mixture comprising principally CHF 3 doped with carbon dioxide in the range of about 5-15 percent by volume.