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US4376300A Expired / Lapsed US ⏱️ 0.0 years remaining

Memory system employing mostly good memories

Assignee: Intel Corp
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Filing: 1981-01-02
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Granted: 1983-03-08
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Expires: 2001-01-02
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Abstract

Abstract A memory system is described which employs a plurality of "mostly good" memory chips. A redundant memory chip is used to store data designated to the defective locations in the mostly good memories. In one embodiment a PROM is programmed to recognize the addresses of the defective elements and to cause the redundant memory to be selected. In another embodiment, a content-addressable memory is employed to provide a new address in response to the addresses of defective elements in the mostly good memories.

Inventors

  • 👤 Siu K. Tsang

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 03:28
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/70; G11C29/76

Claims Analysis

Total Claims: 15
Claim 1
Independent Claim 186 words
In a memory system employing a plurality of memories, each of which are coupled to receive first and second address signals for accessing first and second lines, respectively in said memories, an improvement for permitting use of ones of said memories having defective elements, comprising: a plurality of said memories, each having defective first lines which are accessed by different first address signals, said memories coupled to receive said first and second address signals; a programmable memory, programmed to provide a predetermined output signal upon receipt of each of said different first address signals, said programmable memory coupled to receive said first address signals; an additional memory, coupled to receive said first address signals; and, a selection means for selecting signals such that said additional memory is selected when said defective first lines are accessed, said selection means coupled to said memories and said additional memory, said selection means being controlled by said predetermined output signal from said programmable memory so as to cause selection of said additional memory, whereby a plurality of mostly good memories may be used in said memory system for said memories.
Claim 2
Dependent Claim 186 words
In a memory system employing a plurality of memories, each of which are coupled to receive first and second address signals for accessing first and second lines, respectively in said memories, an improvement for permitting use of ones of said memories having defective elements, comprising: a plurality of said memories, each having defective first lines which are accessed by different first address signals, said memories coupled to receive said first and second address signals; a programmable memory, programmed to provide a predetermined output signal upon receipt of each of said different first address signals, said programmable memory coupled to receive said first address signals; an additional memory, coupled to receive said first address signals; and, a selection means for selecting signals such that said additional memory is selected when said defective first lines are accessed, said selection means coupled to said memories and said additional memory, said selection means being controlled by said predetermined output signal from said programmable memory so as to cause selection of said additional memory, whereby a plurality of mostly good memories may be used in said memory system for said memories.
Claim 3
Dependent Claim 52 words
The memory system defined by claim 1 including additional address signals which are coupled to said memory system for selecting between ones of said memories, said additional address signal and said second address signals identifying one of said lines in said memories, said additional address signals being coupled to said programmable memory.
Claim 4
Dependent Claim 16 words
The memory system defined by claim 2 wherein said programmable memory is a programmable read-only memory.
Claim 5
Dependent Claim 15 words
The memory system defined by claim 2 wherein said programmable memory is a content-addressable memory.
Claim 6
Dependent Claim 21 words
The memory system defined by claim 1 wherein said selection means selects among said memories by controlling an address timing signal.
Claim 7
Dependent Claim 23 words
The memory system defined by claim 1 wherein said selection means is a switching means coupled to the data lines of said memories.
Claim 8
Dependent Claim 139 words
In a memory system which includes a plurality of memories which are coupled to receive address signals for accessing said memories, an improvement which permits use of ones of said memories having defective elements comprising: a memory means coupled to receive said address signals for providing predetermined address signals and a control signal in response to ones of said address signals corresponding to said defective elements of said memories; an additional memory coupled to receive said predetermined address signals from said memory means; and, selection means for selecting either said memories or said additional memory, said selection means controlled by said control signal, so as to select said additional memory for said ones of said address signals corresponding to said defective elements of said memories; whereby mostly good memories may be used in said memory system for said memories.
Claim 9
Dependent Claim 139 words
In a memory system which includes a plurality of memories which are coupled to receive address signals for accessing said memories, an improvement which permits use of ones of said memories having defective elements comprising: a memory means coupled to receive said address signals for providing predetermined address signals and a control signal in response to ones of said address signals corresponding to said defective elements of said memories; an additional memory coupled to receive said predetermined address signals from said memory means; and, selection means for selecting either said memories or said additional memory, said selection means controlled by said control signal, so as to select said additional memory for said ones of said address signals corresponding to said defective elements of said memories; whereby mostly good memories may be used in said memory system for said memories.
Claim 10
Dependent Claim 15 words
The memory system defined by claim 7 wherein said memory means comprises a content-addressable memory.
Claim 11
Dependent Claim 13 words
The memory system defined by claim 8 wherein said memory means is programmable.
Claim 12
Dependent Claim 32 words
The memory system defined by claim 7 wherein said memory system receives additional address signals for selecting between ones of said memories, said additional address signals being coupled to said memory means.
Claim 13
Dependent Claim 24 words
The memory system defined by claim 7 wherein each of said memories is disposed on separate substrates and wherein each substrate includes redundant elements.
Claim 14
Dependent Claim 21 words
The memory system defined by claim 7 wherein said selection means selects among said memories by controlling an address timing signal.
Claim 15
Dependent Claim 23 words
The memory system defined by claim 7 wherein said selection means is a switching means coupled to the data lines of said memories.

References Cited (Backward Citations)

US3845476A Cited
US4047163A Cited
US4250570A Cited
US4250570B1 Cited
US4310901A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1986-03-07 1986-09-06 1987-03-08 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1990-03-07 1990-09-06 1991-03-08 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1994-03-07 1994-09-06 1995-03-08 $7700.00 Window Closed / Lapsed

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