US4374011A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for fabricating non-encroaching planar insulating regions in integrated circuit structures
Assignee: National Semiconductor Corp
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Filing: 1981-05-08
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Granted: 1983-02-15
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Expires: 2001-05-08
Abstract
Abstract A method for fabricating insulating regions in an integrated circuit structure is disclosed in which the insulating regions do not encroach upon the surrounding integrated circuit and in which a substantially planar surface across the top of the insulating material and the substrate is created. The method includes the steps of removing portions of the substrate wherever the insulating regions are to be formed, beginning to deposit insulating material across the substrate and in the openings created, and, while continuing to deposit insulating material simultaneously removing insulating material from generally horizontal surfaces and redepositing it on generally vertical surfaces of the substrate and the openings until a planar surface results.
Inventors
- 👤 Madhukar B. Vora
- 👤 Werner F. Rust
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:26
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/65; H10P14/6502; H10P14/6506; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
103 words
A method for fabricating an insulating region in conjunction with an integrated circuit structure having a substrate, the method comprising: removing a first portion of the substrate to create an opening wherein the insulating region is to be formed; beginning to deposit insulating material across the substrate and in the opening; continuing to deposit insulating material while simultaneously removing insulating material from generally horizontal surfaces and redepositing it on generally vertical surfaces to create a substantially planar layer of insulating material across the substrate and over the opening; and ceasing to deposit insulating material when the substantially planar layer is a desired thickness.
Claim 2
Independent Claim
103 words
A method for fabricating an insulating region in conjunction with an integrated circuit structure having a substrate, the method comprising: removing a first portion of the substrate to create an opening wherein the insulating region is to be formed; beginning to deposit insulating material across the substrate and in the opening; continuing to deposit insulating material while simultaneously removing insulating material from generally horizontal surfaces and redepositing it on generally vertical surfaces to create a substantially planar layer of insulating material across the substrate and over the opening; and ceasing to deposit insulating material when the substantially planar layer is a desired thickness.
Claim 3
Dependent Claim
29 words
A method as in claim 1 wherein the steps of beginning to deposit and continuing to deposit insulating material comprise sputtering the insulating material onto the integrated circuit structure.
Claim 4
Dependent Claim
24 words
A method as in claim 2 wherein immediately prior to the step of sputtering the insulating material the opening in the substrate is oxidized.
Claim 5
Dependent Claim
19 words
A method as in claim 1 wherein the step of continuing to deposit comprises back sputtering the insulating material.
Claim 6
Dependent Claim
11 words
A method as in claim 4 wherein the substrate is silicon.
Claim 7
Dependent Claim
13 words
A method as in claim 5 wherein the insulating material is silicon dioxide.
Claim 8
Dependent Claim
23 words
A method as in the claim 1 wherein the step of removing a first portion of the substrate comprises anisotropically etching the substrate.
Claim 9
Dependent Claim
15 words
A method as in claim 7 wherein the anisotropic etching comprises etching with a plasma.
Claim 10
Dependent Claim
66 words
A method as in claim 8 wherein the step of etching with a plasma comprises: depositing a first material resistant to the plasma on the surface of the substrate; fabricating an opening in the first material wherever the first portion of the substrate is to be removed; and removing the first portion of the substrate by plasma etching through the opening made in the preceding step.
Claim 11
Independent Claim
131 words
A method for fabricating insulating regions in an integrated circuit structure having a substrate, the method comprising: forming a layer of masking material over all of a surface of the substrate except where the insulating regions are to be formed; removing a portion of the substrate from wherever the substrate is not overlaid by the layer of masking material to thereby create openings in the substrate; oxidizing the substrate and the openings to create a layer of oxidized material on the surface of the substrate and in the openings; and depositing insulating material on the substrate and in the openings while simultaneously removing insulating material from generally horizontal surfaces and redepositing it on generally vertical surfaces to create a substantially planar surface of insulating material over the substrate and the openings.
Claim 12
Independent Claim
131 words
A method for fabricating insulating regions in an integrated circuit structure having a substrate, the method comprising: forming a layer of masking material over all of a surface of the substrate except where the insulating regions are to be formed; removing a portion of the substrate from wherever the substrate is not overlaid by the layer of masking material to thereby create openings in the substrate; oxidizing the substrate and the openings to create a layer of oxidized material on the surface of the substrate and in the openings; and depositing insulating material on the substrate and in the openings while simultaneously removing insulating material from generally horizontal surfaces and redepositing it on generally vertical surfaces to create a substantially planar surface of insulating material over the substrate and the openings.
Claim 13
Dependent Claim
25 words
A method as in claim 10 further comprising the step of removing insulating material from the substantially planar surface until a desired thickness is achieved.
Claim 14
Dependent Claim
26 words
A method as in claim 10 wherein the insulating material is removed from the surface of the substrate until the surface of the substrate is exposed.
Claim 15
Dependent Claim
13 words
A method as in claim 12 wherein the insulating material is silicon dioxide.
Claim 16
Dependent Claim
11 words
A method as in claim 13 wherein the substrate is silicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-02-14 | 1986-08-16 | 1987-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-02-14 | 1990-08-16 | 1991-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-02-14 | 1994-08-16 | 1995-02-15 | $7700.00 | Window Closed / Lapsed |