US4307180A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process of forming recessed dielectric regions in a monocrystalline silicon substrate
Assignee: International Business Machines Corp
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Filing: 1980-08-22
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Granted: 1981-12-22
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Expires: 2000-08-22
Abstract
Abstract A method of forming surface planarity to a substrate during removal of excess dielectric material when fabricating recessed regions of dielectric material in a semiconductor device wherein a dielectric layer is formed on the surface of the silicon substrate, a relatively thick layer of polycrystalline silicon deposited over the SiO 2 layer, openings formed through the polycrystalline layer and SiO 2 layer and into the substrate to form trenches, vapor depositing a layer of dielectric material over the surface of the substrate to a depth sufficient to fill the trench, depositing a planarized layer over a layer of dielectric material, reactive ion etching the planarizing layer, the dielectric layer, the polycrystalline layer, and selectively removing the remaining polycrystalline silicon layer to expose the SiO 2 layer.
Inventors
- 👤 Hans B. Pogge
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 08:28
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/094; H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/28; H10P50/282; H10P50/283; H10P50/286; H10P50/287; H10P50/60; H10P50/66; H10P50/663; H10P50/667; H10P95/00; H10P95/06; H10P95/062; H10P95/064; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0145; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
175 words
A method of forming a recessed dielectric region in a silicon substrate comprising: forming an SiO 2 layer on the surface of said silicon substrate, forming a relatively thick layer of polycrystalline silicon over said SiO 2 layer. depositing a resist layer over said polycrystalline silicon layer, exposing and developing said resist layer to form openings that define the desired locations of desired said recessed dielectric regions, forming openings through said exposed polycrystalline silicon layer, said SiO 2 layer, and into said substrate to the desired depth that defines isolation trenches, chemical vapor depositing a layer of dielectric material over the surface of said substrate to a depth sufficient to fill said trenches, depositing a planarizing layer over said layer of dielectric material, reactive ion etching said planarizing layer, said layer of dielectric material, said second layer and partially into said polycrystalline silicon layer, selectively removing the remaining polycrystalline silicon layer with an agent that etches silicon at a significantly higher rate than SiO 2 to expose said SiO 2 layer as the surface layer.
Claim 2
Independent Claim
175 words
A method of forming a recessed dielectric region in a silicon substrate comprising: forming an SiO 2 layer on the surface of said silicon substrate, forming a relatively thick layer of polycrystalline silicon over said SiO 2 layer. depositing a resist layer over said polycrystalline silicon layer, exposing and developing said resist layer to form openings that define the desired locations of desired said recessed dielectric regions, forming openings through said exposed polycrystalline silicon layer, said SiO 2 layer, and into said substrate to the desired depth that defines isolation trenches, chemical vapor depositing a layer of dielectric material over the surface of said substrate to a depth sufficient to fill said trenches, depositing a planarizing layer over said layer of dielectric material, reactive ion etching said planarizing layer, said layer of dielectric material, said second layer and partially into said polycrystalline silicon layer, selectively removing the remaining polycrystalline silicon layer with an agent that etches silicon at a significantly higher rate than SiO 2 to expose said SiO 2 layer as the surface layer.
Claim 3
Dependent Claim
15 words
The method of claim 1 wherein said layer of dielectric material is SiO 2 .
Claim 4
Dependent Claim
18 words
The method of claim 2 wherein said remainder of the polycrystalline silicon layer is removed by pyrocatechol etchant.
Claim 5
Dependent Claim
35 words
The method of claim 2 wherein said remainder of the polycrystalline silicon layer is removed by reactive ion etching in an ambient that removes polycrystalline silicon at a significantly higher rate than SiO 2 .
Claim 6
Dependent Claim
17 words
The method of claim 4 wherein said ambient used in reactive ion etching is SF 6 .
Claim 7
Dependent Claim
23 words
The method of claim 4 wherein said ambient used in reactive ion etching is a combination of SF 6 and Cl 2 .
Claim 8
Dependent Claim
82 words
The method of claim 1 wherein said reactive ion etching of said planarizing layer, said layer of dielectric material, and partially into said polycrystalline layer is achieved with an ambient selected from the group consisting of X 2 , HX, CX 4 , CHX 3 , CH 2 X 2 , CH 3 X, C 2 H 5 X, C 2 H 4 X 2 , C 2 H 3 X 3 , where X is a fluoride, chloride or bromide constituent.
Claim 9
Dependent Claim
18 words
The method of claim 1 or 2 wherein said planarizing layer is formed of a polyimide resin material.
Claim 10
Dependent Claim
15 words
The method of claim 2 wherein said planarizing layer is formed of a resist material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-12-21 | 1985-06-22 | 1985-12-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-12-21 | 1989-06-22 | 1989-12-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-12-21 | 1993-06-22 | 1993-12-22 | $7700.00 | Window Closed / Lapsed |