Patent US4373966A successfully refreshed from Google Patents.
US4373966A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Forming Schottky barrier diodes by depositing aluminum silicon and copper or binary alloys thereof and alloy-sintering
Assignee: International Business Machines Corp
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Filing: 1981-04-30
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Granted: 1983-02-15
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Expires: 2001-04-30
Abstract
Abstract This describes four distinct methods of forming copper and silicon doped aluminum conductive structures on the surface of the semiconductor body which when sintered will form in conjunction with the exposed surface of the silicon body Schottky diodes which are resistant to internal field emission characteristics created by co-incidental copper-aluminum precipitates and aluminum doped solid phase epitaxial growths.
Inventors
- 👤 Sang U. Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 16:32
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/60; H10D64/00; H10D64/01; H10D64/012; H10D64/0121; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/918; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/12674
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
38 words
A method of forming a Schottky diode comprising the steps of depositing a layer of copper doped silicon on a silicon body depositing a layer of aluminum on said copper doped silicon layer, and sintering the entire unit.
Claim 2
Independent Claim
38 words
A method of forming a Schottky diode comprising the steps of depositing a layer of copper doped silicon on a silicon body depositing a layer of aluminum on said copper doped silicon layer, and sintering the entire unit.
Claim 3
Independent Claim
51 words
A method of forming a Schottky barrier diode comprising the steps of; depositing a layer of silicon on the surface of a silicon body, depositing a layer of copper doped aluminum on the surface of said deposited silicon layer, and sintering the body at a temperature in excess of 400° C.
Claim 4
Independent Claim
51 words
A method of forming a Schottky barrier diode comprising the steps of; depositing a layer of silicon on the surface of a silicon body, depositing a layer of copper doped aluminum on the surface of said deposited silicon layer, and sintering the body at a temperature in excess of 400° C.
Claim 5
Independent Claim
72 words
A method of forming an aluminum-copper precipitates free Schottky diode in a silicon body while using copper doped aluminum metallurgy to form the diode comprising of the steps of; depositing on a silicon body a layer of aluminum, depositing a layer of silicon on said layer of aluminum, and depositing on the layer of said silicon a layer of copper, and sintering said body at a temperature in excess of 400° C.
Claim 6
Independent Claim
72 words
A method of forming an aluminum-copper precipitates free Schottky diode in a silicon body while using copper doped aluminum metallurgy to form the diode comprising of the steps of; depositing on a silicon body a layer of aluminum, depositing a layer of silicon on said layer of aluminum, and depositing on the layer of said silicon a layer of copper, and sintering said body at a temperature in excess of 400° C.
Claim 7
Independent Claim
54 words
A method whereby a Schottky barrier diode is formed in a silicon body comprised the steps of; depositing a layer of silicon doped silicion on the surface of a silicon body, depositing a layer of copper on said silicon doped silicon layer, and sintering said body at a temperature in excess of 400° C.
Claim 8
Independent Claim
54 words
A method whereby a Schottky barrier diode is formed in a silicon body comprised the steps of; depositing a layer of silicon doped silicion on the surface of a silicon body, depositing a layer of copper on said silicon doped silicon layer, and sintering said body at a temperature in excess of 400° C.
Claim 9
Dependent Claim
70 words
The method of claim 1 wherein there is further intended the step of heating the silicon body to a temperature of 200° C. prior to the deposition of said copper doped silicon layer, and said layer of copper doped silicon is deposited to a thickness of 600 angstroms and contains 4 to 5% by weight of copper, and the layer of aluminum is deposited to a thickness of 9400 angstroms.
Claim 10
Dependent Claim
46 words
The method of claim 2 wherein said silicon body is heated to 200° C. and said deposit of silicon is 200 angstroms in thick and formed by evaporation and said copper doped aluminum layer on said silicon layer is 9800 angstroms thick and contains 4% copper.
Claim 11
Dependent Claim
50 words
The method of claim 3 wherein said silicon body is heated to a temperature of 200° C. and said during the deposition said aluminum layer, said aluminum layer having a thickness of 9600 angstroms, said silicon, a layer of 200 angstroms and said copper layer a thickness of 300 angstroms.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-02-14 | 1986-08-16 | 1987-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-02-14 | 1990-08-16 | 1991-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-02-14 | 1994-08-16 | 1995-02-15 | $7700.00 | Window Closed / Lapsed |