Process for producing transparent electroconductive film

Claim 2

A process for producing a transparent electroconductive film, which comprises applying a coating solution selected from (a) a coating solution comprising an inorganic indium compound free from a photosensitive group in the molecule, or an inorganic tin compound free from a photosensitive group in the molecule, an organic compound capable of providing a ligand to complex indium or tin, and an organic solvent, (b) a coating solution comprising an organic indium compound free from a photosensitive group in the molecule, or an organic tin compound free from a photosensitive group in the molecule, and an organic solvent, and (c) the coating solution (a) or (b) further containing a dopant source, to a glass substrate, thereby forming a film thereon, immediately thereafter irradiating the film and the substrate with radiation capable of exciting organic groups, at a substrate temperature of 100°-600° C. and then baking the substrate at a high temperature of from 300° to 600° C.

Claim 3

A process for producing a transparent electroconductive film, which comprises applying a coating solution selected from (a) a coating solution comprising an inorganic indium compound free from a photosensitive group in the molecule, or an inorganic tin compound free from a photosensitive group in the molecule, an organic compound capable of providing a ligand to complex indium or tin, and an organic solvent, and (c) the coating solution (a) or (b) further containing a dopant source, to a glass substrate, thereby forming a film thereon, and drying the film at a temperature from 55° to 300° C., irradiating the glass substrate with radiation capable of exciting organic groups at a substrate temperature of 100° to 600° C., and then baking the substrate at a high temperature of from 300° to 600° C.

Claim 4

A process for producing a transparent electroconductive film, which comprises applying a coating solution selected from (a) a coating solution comprising an inorganic indium compound free from a photosensitive group in the molecule, or an inorganic tin compound free from a photosensitive group in the molecule, an organic compound capable of providing a ligand to complex indium or tin, and an organic solvent, and (c) the coating solution (a) or (b) further containing a dopant source, to a glass substrate, thereby forming a film thereon, and drying the film at a temperature from 55° to 300° C., irradiating the glass substrate with radiation capable of exciting organic groups at a substrate temperature of 100° to 600° C., and then baking the substrate at a high temperature of from 300° to 600° C.

Claim 5

A process according to claim 1 or 2, wherein the radiation capable of exciting organic groups is ultraviolet rays.

Claim 6

A process according to claim 2, wherein the film is dried at 85°-300° C.

Claim 7

A process according to claim 1 or 2, wherein: (a) the inorganic indium compound free from a photosensitive group in the molecule is at least one compound selected from indium chloride, indium nitrate, indium perchlorate, and their hydrates, (b) the inorganic tin compound free from a photosensitive group in the molecule is at least one compound selected from SnCl 4 .5H 2 O, and metallic tin dissolved in an inorganic acid, (c) the organic ligand is at least one compound selected from 2-ethylhexanoic acid, propionic acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, maleic acid, fumaric acid, citraconic acid, mesaconic acid, itaconic acid, methylmalonic acid, methylsuccinic acid, hexahydrophthalic acid, methyltetrahydrophthalic acid, glycolic acid, lactic acid, hydroacrylic acid, α-hydroxy-n-butyric acid, α-hydroxyisobutyric acid, β-hydroxy-n-butyric acid, γ-hydroxybutyric acid, 3-hydroxyglutaric acid, 3-hydroxy-3-methylglutaric acid, leucinic acid, tartronic acid, glyceric acid, malic acid, oxalacetic acid, citric acid, tartaric acid, glyconic acid, 3-hydroxy-3-phenylpropionic acid, hydroxyphenylacetic acid or their intermolecular or intramolecular esters or anhydrides, acetylacetone, dipivaloylmethane, ethylacetacetate, hexane-2,4-dion, 1-methylpentane-2,4-dion and heptane-3,5-dion, the compound being in a mixing proportion of 0.2-3.0 moles to one mole of the inorganic indium compound (a) or the inorganic tin compound (b), (d) the organic solvent is at least one solvent selected from methanol, ethanol, isopropanol, methylcellosolve, ethylcellosolve, butylcellosolve, ethyleneglycol, propyleneglycol, diethyleneglycol, ethylcarbitol, N-methylpyrrolidone, and dimethylsulfoxide, the solvent being in a mixing proportion of 80-2% by weight to 20-98% by weight of the inorganic indium compound (a) or the inorganic tin compound (b), (e) the organic indium compound free from a photosensitive group in the molecule is at least one compound selected from the reaction products with indium of 2-ethylhexanoic acid, propionic acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacinic acid, maleic acid, fumaric acid, citraconic acid, mesaconic acid, itaconic acid, methylmalonic acid, methylsuccinic acid, hexahydrophthalic acid, methyltetrahydrophthalic acid, glycolic acid, lactic acid, hydroacrylic acid, α-hydroxy-n-butyric acid, α-hydroxyisobutyric acid, β-hydroxy-n-butyric acid, γ-hydroxybutyric acid, 3-hydroxyglutaric acid, 3-hydroxy-3-methylglutaric acid, leucinic acid, tartronic acid, glyceric acid, malic acid, oxalacetic acid, citric acid, tartaric acid, gluconic acid, 3-hydroxy-3-phenylpropionic acid, hydroxyphenylacetic acid, or their intermolecular or intramolecular esters, or anhydrides, acetylacetone, dipivaloylmethane, ethylacetacetate, hexane-2,4-dion, 1-methyl-pentane-2,4-dione, and heptane-3,5-dion, (C 2 H 5 O) 3 In, C 2 H 5 OIn(CH 3 ) 2 , ##STR3## and indium naphthenate, (f) the organic tin compound free from a photosensitive group in the molecule is at least one compound selected from (C 4 H 9 ) 2 Sn(OCOCH 3 ) 2 , (C 4 H 9 ) 2 Sn(OCOCH═CHCOO), (C 4 H 9 ) 2 Sn(OCOC 11 H 23 ) 2 , (C 4 H 9 ) 2 Sn(OCOCH═CHCOOC 2 H 5 ) 2 , (C 4 H 9 ) 2 Sn[OCOC(CH 3 )═CH 2 ] 2 , Sn(OC 2 H 5 ) 4 , Sn(OC 3 H 7 ) 4 , (CH 3 ) 2 SnCl 2 , C 4 H 9 SnOOH, CH 3 SnOOH, (C 4 H 9 ) 3 SnF, and (C 4 H 9 ) 3 SnCl, the solvent being in a mixing proportion of 80-2% by weight to 20-98% by weight of the organic indium compound (e) or the organic tin compound (f), (g) the dopant source for the organic and inorganic indium compounds free from a photosensitive group in the molecule is at least one compound selected from the inorganic tin compounds (b) and the organic tin compounds (f), and is contained in a necessary amount for adjusting resistance to a desired value, and the dopant source for the inorganic and organic tin compounds free from a photosensitive group in the molecule is at least one compound selected from (C 6 H 5 ) 3 Sb, (p-CH 3 C 6 H 4 ) 3 Sb, (C 6 H 5 ), SbCl 2 , (C 2 H 5 ) 3 Sb, (tert-C 4 H 9 ) 2 SbCl, (C 2 H 5 ) 3 SbCl, (CH 3 ) 3 Sb(OCOCH 3 ) 2 , (CH 3 ) 2 Sb(OCOCH 3 ) 3 , ##STR4## and Sb(OC 2 H 5 ) 3 , (h) the glass substrate is irradiated with ultraviolet rays from an ultraviolet lamp with an output of 10 to 160 W/cm at a substrate temperature of 100°-600° C. while keeping the distance between the lamp and the substrate at 10 cm, and ultimately baked in an atmosphere at 300°-600° C., thereby obtaining a transparent electroconductive film.