US4368099A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Development of germanium selenide photoresist
Assignee: RCA Corp
•
Filing: 1982-02-05
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Granted: 1983-01-11
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Expires: 2002-02-05
Abstract
Abstract An improved method of etching a silver-doped germanium selenide resist film utilizing as the etchant gas sulfur hexafluoride.
Inventors
- 👤 Paul G. Huggett
- 👤 Klaus Frick
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:25
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/36
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
90 words
In a method of forming a pattern in a resist layer of germanium selenide on a substrate comprising: (a) coating the germanium selenide layer with a photosensitive silver-containing material; (b) irradiating a portion of the silver-containing coating to provide a corresponding silver-doped portion of the germanium selenide layer; (c) removing the non-irradiated portion of the silver-containing coating; and (d) plasma etching the germanium selenide layer with an etchant gas to remove that portion not doped with silver, the improvement comprising utilizing as the etchant gas in step (d) sulfur hexafluoride.
Claim 2
Dependent Claim
90 words
In a method of forming a pattern in a resist layer of germanium selenide on a substrate comprising: (a) coating the germanium selenide layer with a photosensitive silver-containing material; (b) irradiating a portion of the silver-containing coating to provide a corresponding silver-doped portion of the germanium selenide layer; (c) removing the non-irradiated portion of the silver-containing coating; and (d) plasma etching the germanium selenide layer with an etchant gas to remove that portion not doped with silver, the improvement comprising utilizing as the etchant gas in step (d) sulfur hexafluoride.
Claim 3
Dependent Claim
21 words
A method in accordance with claim 1, wherein said germanium selenide layer is etched by reactive sputter etching with sulfur hexafluoride.
Claim 4
Dependent Claim
26 words
A method in accordance with claim 1, wherein said germanium selenide layer is comprised of about 10 mole percent germanium and about 90 mole percent selenium.
Claim 5
Dependent Claim
15 words
A method in accordance with claim 1, wherein said silver-containing material is potassium silver cyanide.
Claim 6
Dependent Claim
56 words
A method in accordance with claim 1, wherein said substrate is comprised of a plurality of layers and the layer having the germanium selenide disposed thereon is polyimide, the improvement further comprising reactive sputter etching a portion of the polyimide layer utilizing oxygen as the etchant gas and the patterned germanium selenide layer as a mask.
Claim 7
Dependent Claim
19 words
A method in accordance with claim 5, wherein the etching procedures are carried out sequentially in the same apparatus.
Claim 8
Dependent Claim
18 words
A method in accordance with claim 5, wherein the polyimide is disposed on a layer of a metal.
References Cited (Backward Citations)
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Cited
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Cited
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Cited
US4276368A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-01-10 | 1986-07-12 | 1987-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-01-10 | 1990-07-12 | 1991-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-01-10 | 1994-07-12 | 1995-01-11 | $7700.00 | Window Closed / Lapsed |