Patent US4367114A successfully refreshed from Google Patents.
US4367114A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High speed plasma etching system
Assignee: Lam Research Corp
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Filing: 1981-05-06
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Granted: 1983-01-04
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Expires: 2001-05-06
Abstract
Abstract This invention relates to a plasma etching system, which includes a lower flange and a spaced upper flange; a chamber wall mounted between the flanges to form a closed etching chamber; a grounded wafer support plate disposed in said chamber for receiving thereon a wafer to be processed; an electrical insulating element interposed between the chamber wall and the support plate; a sintered or sintered-like porous electrode plate mounted in the chamber in spaced relationship with respect to the wafer; said plate having a gas inlet for receiving a supply of etching gas; circuitry for applying an excitation voltage to this plate, and said chamber having a gas outlet leading to a vacuum source.
Inventors
- 👤 George N. Steinberg
- 👤 Alan R. Reinberg
- 👤 Jean Dalle Ave
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 08:41
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32623; H01J37/3244; H01J37/32633
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
149 words
A plasma etching system comprising a lower flange and a spaced upper flange; a chamber wall mounted between said flanges to form a closed etching chamber; a wafer support plate disposed in said chamber for receiving thereon a wafer to be processed; means for electrically grounding said wafer support plate; means for clamping the wafer firmly to the wafer support plate to enhance electrical coupling of the wafer to ground; electrical insulating spacer means interposed between said chamber wall and said support plate; a sintered or sintered-like porous electrode plate, means for mounting said electrode plate in the chamber in spaced relationship with respect to the wafer; said plate having gas inlet means for receiving a supply of etching gas; means for applying an excitation operating voltage to said electrode plate; and said chamber having a gas outlet leading to a vacuum source for discharging gas and etching products.
Claim 2
Dependent Claim
149 words
A plasma etching system comprising a lower flange and a spaced upper flange; a chamber wall mounted between said flanges to form a closed etching chamber; a wafer support plate disposed in said chamber for receiving thereon a wafer to be processed; means for electrically grounding said wafer support plate; means for clamping the wafer firmly to the wafer support plate to enhance electrical coupling of the wafer to ground; electrical insulating spacer means interposed between said chamber wall and said support plate; a sintered or sintered-like porous electrode plate, means for mounting said electrode plate in the chamber in spaced relationship with respect to the wafer; said plate having gas inlet means for receiving a supply of etching gas; means for applying an excitation operating voltage to said electrode plate; and said chamber having a gas outlet leading to a vacuum source for discharging gas and etching products.
Claim 3
Dependent Claim
34 words
A plasma etching system according to claim 1 wherein said means for mounting said electrode plate in the chamber comprises an electrically insulating support ring interposed between said electrode plate and said chamber wall.
Claim 4
Dependent Claim
25 words
A plasma etching system according to claim 1 wherein said electrode plate is fabricated of sintered fine particles for omnidirectional effusion of the gas therefrom.
Claim 5
Dependent Claim
24 words
A plasma etching system according to claim 3 wherein the pore size of the electrode plate is of the order of about 0.5 microns.
Claim 6
Dependent Claim
17 words
A plasma etching system according to claim 3 wherein said electrode plate is fabricated from stainless steel.
Claim 7
Dependent Claim
17 words
A plasma etching system according to claim 3 wherein said electrode plate is fabricated from porous graphite.
Claim 8
Dependent Claim
18 words
A plasma etching system according to claim 3 wherein said electrode plate is fabricated from porous sintered quartz.
Claim 9
Dependent Claim
162 words
A plasma etching system comprising a lower flange and a spaced upper flange; a chamber wall mounted between said flanges to form a closed etching chamber; a wafer support plate disposed in said chamber for receiving thereon a wafer to be processed; means for electrically grounding said wafer support plate; electrical insulating spacer means interposed between said chamber wall and said support plate; a sintered or sintered-line porous electrode plate, means for mounting said electrode plate in the chamber in spaced relationship with respect to the wafer; said plate having gas inlet means for receiving a supply of etching gas; means for applying an excitation operating voltage to said electrode plate; a plurality of spring loaded pins interposed between said elctrode plate and said wafer to resiliently clamp the wafer to the wafer support plate to enhance electrical coupling of the wafer to ground; and said chamber having a gas outlet leading to a vacuum source for discharing gas and etching products.
Claim 10
Dependent Claim
162 words
A plasma etching system comprising a lower flange and a spaced upper flange; a chamber wall mounted between said flanges to form a closed etching chamber; a wafer support plate disposed in said chamber for receiving thereon a wafer to be processed; means for electrically grounding said wafer support plate; electrical insulating spacer means interposed between said chamber wall and said support plate; a sintered or sintered-line porous electrode plate, means for mounting said electrode plate in the chamber in spaced relationship with respect to the wafer; said plate having gas inlet means for receiving a supply of etching gas; means for applying an excitation operating voltage to said electrode plate; a plurality of spring loaded pins interposed between said elctrode plate and said wafer to resiliently clamp the wafer to the wafer support plate to enhance electrical coupling of the wafer to ground; and said chamber having a gas outlet leading to a vacuum source for discharing gas and etching products.
Claim 11
Dependent Claim
34 words
A plasma etching system according to claim 8 wherein said means for mounting said electrode plate in the chamber comprises an electrically insulating support ring interposed between said electrode plate and said chamber wall.
Claim 12
Dependent Claim
25 words
A plasma etching system according to claim 8 wherein said electrode plate is fabricated of sintered fine particles for omnidirectional effusion of the gas therefrom.
Claim 13
Dependent Claim
24 words
A plasma etching system according to claim 10 wherein the pore size of the electrode plate is of the order of about 0.5 microns.
Claim 14
Dependent Claim
17 words
A plasma etching system according to claim 10 wherein said electrode plate is fabricated from stainless steel.
Claim 15
Dependent Claim
17 words
A plasma etching system according to claim 10 wherein said electrode plate is fabricated from porous graphite.
Claim 16
Dependent Claim
18 words
A plasma etching system according to claim 10 wherein said electrode plate is fabricated from porous sintered quartz.
Claim 17
Dependent Claim
159 words
A plasma etching system comprising a lower flange and a spaced upper flange; a chamber wall mounted between said flanges to form a closed etching chamber; a wafer support plate disposed in said chamber for receiving thereon a wafer to be processed; means for electrically grounding wafer support plate; electrical insulating spacer means interposed between said chamber wall and said support plate; a sintered or sintered-like porous electrode plate, means for mounting said electrode plate in the chamber in spaced relationship with respect to the wafer; said plate having gas inlet means for receiving a supply of etching gas; means for applying and excitation operating voltage to said electrode plate; a resilient mounting ring interposed between said electrode plate and said wafer to resiliently clamp the wafer to the wafer support plate to enhance electrical coupling of the wafer to ground; and said chamber having a gas outlet leading to a vacuum source for discharging gas and etching products.
Claim 18
Dependent Claim
159 words
A plasma etching system comprising a lower flange and a spaced upper flange; a chamber wall mounted between said flanges to form a closed etching chamber; a wafer support plate disposed in said chamber for receiving thereon a wafer to be processed; means for electrically grounding wafer support plate; electrical insulating spacer means interposed between said chamber wall and said support plate; a sintered or sintered-like porous electrode plate, means for mounting said electrode plate in the chamber in spaced relationship with respect to the wafer; said plate having gas inlet means for receiving a supply of etching gas; means for applying and excitation operating voltage to said electrode plate; a resilient mounting ring interposed between said electrode plate and said wafer to resiliently clamp the wafer to the wafer support plate to enhance electrical coupling of the wafer to ground; and said chamber having a gas outlet leading to a vacuum source for discharging gas and etching products.
Claim 19
Dependent Claim
34 words
A plasma etching system according to claim 15 wherein said means for mounting said electrode plate in the chamber comprises an electrically insulating support ring interposed between said electrode plate and said chamber wall.
Claim 20
Dependent Claim
25 words
A plasma etching system according to claim 15 wherein said electrode plate is fabricated of sintered fine particles for omnidirectional effusion of the gas therefrom.
Claim 21
Dependent Claim
24 words
A plasma etching system according to claim 17 wherein the pore size of the electrode plate is of the order of about 0.5 microns.
Claim 22
Dependent Claim
17 words
A plasma etching system according to claim 17 wherein said electrode plate is fabricated from stainless steel.
Claim 23
Dependent Claim
17 words
A plasma etching system according to claim 17 wherein said electrode plate is fabricated from porous graphite.
Claim 24
Dependent Claim
18 words
A plasma etching system according to claim 17 rein said electrode plate is fabricated from porous sintered quartz.
Claim 25
Dependent Claim
174 words
A plasma etching system comprising a lower flange and a spaced upper flange; a chamber wall mounted between said flanges to form a closed etching chamber; a wafer support plate disposed in said chamber for receiving thereon a wafer to be processed; means for electrically grounding said wafer support plate; electrical insulating spacer means interposed between said chamber wall and said support plate; a sintered or sintered-like porous electrode plate, means for mounting said electrode plate in the chamber in spaced relationship with respect to the wafer; said plate having gas inlet means for receiving a supply of etching gas; means for applying an excitation operating voltage to said electrode plate; means for clamping the wafer firmly to the wafer support plate to enhance the electrical coupling of the wafer to ground, and wherein the frequency of said excitation operating voltage is in the range from about 100 KH z to about 1 KH z ; and said chamber having a gas outlet leading to a vacuum source for discharing gas and etching products.
Claim 26
Dependent Claim
174 words
A plasma etching system comprising a lower flange and a spaced upper flange; a chamber wall mounted between said flanges to form a closed etching chamber; a wafer support plate disposed in said chamber for receiving thereon a wafer to be processed; means for electrically grounding said wafer support plate; electrical insulating spacer means interposed between said chamber wall and said support plate; a sintered or sintered-like porous electrode plate, means for mounting said electrode plate in the chamber in spaced relationship with respect to the wafer; said plate having gas inlet means for receiving a supply of etching gas; means for applying an excitation operating voltage to said electrode plate; means for clamping the wafer firmly to the wafer support plate to enhance the electrical coupling of the wafer to ground, and wherein the frequency of said excitation operating voltage is in the range from about 100 KH z to about 1 KH z ; and said chamber having a gas outlet leading to a vacuum source for discharing gas and etching products.
Claim 27
Dependent Claim
33 words
A plasma etching according to claim 22 wherein said means for mounting said electrode plate in the chamber comprises an electrically insulating support ring interposed between said electrode plate and said chamber wall.
Claim 28
Dependent Claim
25 words
A plasma etching system according to claim 22 wherein said electrode plate is fabricated of sintered fine particles for omnidirectional effusion of the gas therefrom.
Claim 29
Dependent Claim
24 words
A plasma etching system according to claim 23 wherein the pore size of the electrode plate is of the order of about 0.5 microns.
Claim 30
Dependent Claim
17 words
A plasma etching system according to claim 23 wherein said electrode plate is fabricated from stainless steel.
Claim 31
Dependent Claim
17 words
A plasma etching system according to claim 23 wherein said electrode plate is fabricated from porous graphite.
Claim 32
Dependent Claim
18 words
A plasma etching system according to claim 23 wherein said electrode plate is fabricated from porous sintered quartz.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-01-03 | 1986-07-05 | 1987-01-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-01-03 | 1990-07-05 | 1991-01-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-01-03 | 1994-07-05 | 1995-01-04 | $7700.00 | Window Closed / Lapsed |