Semiconductor speech path switch

Claim 1

A semiconductor speech path switch comprising a plurality of semiconductor chips each including a cross-point element formed in said chips, first electrode means for forming a speech path connected with said cross-point element, and second electrode means for selectively actuating said cross-point element, and wiring plate means including pedestals respectively connected with the first and second electrode means on said chips, a group of terminals disposed on said wiring plate means, and a group of wirings for connecting said group of terminals with said group of pedestals, said plural chips being mounted on said wiring plate means by facedown bonding, thereby to form a matrix array, wherein the improvement comprises said group of wirings comprising a first group of speech path wirings and selection path wirings constituting rows of said matrix array, and a second group of speech path wirings and selection path wirings constituting columns of said matrix array, said first group of speech and selection path wirings forming a first layer and said second group of speech and selection path wirings forming a second layer separated from said first layer by an insulating layer, said first and second group of speech and selection path wirings intersecting to each other through said insulating layer, said first group of speech and selection path wirings being connected with said pedestals through through-holes in said insulating layer and said second group of speech and selection path wirings being connected directly with said pedestals; and wherein said improvement further comprises said group of terminals including a first group of speech path terminals and selection terminals constituting rows of said speech path, and a second group of speech path terminals and selection terminals constituting columns of said speech path, said first and second group of terminals being disposed adjacent to each other on said wiring plate means.