US4364044A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor speech path switch
Assignee: Hitachi Ltd
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Filing: 1979-04-20
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Granted: 1982-12-14
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Expires: 1999-04-20
Abstract
Abstract In a semiconductor speech path at least a crosspoint element for forming a unitary matrix is formed on a semiconductor chip. The interconnections between the crosspoint elements and the matrix wirings are made on a ceramic wiring plate. By mounting a plurality of semiconductor chips on the ceramic wiring plate by face-down bonding, unitary matrix arrays are formed and at the same time the whole of a matrix array is formed. A row wiring having first speech path wirings and first selection wirings and a column wiring having second speech path wirings and second selection path wirings are doubly layered on the semiconductor wiring plate, with the intervention of an insulating layer therebetween. The upper layer, except for a pedestal region, is covered with a ceramic insulating layer. Terminals for row and column wirings are arranged in dual-in-line fashion. The speech path terminals of each of the row and column wirings are symmetrically and oppositely disposed to each other. This is correspondingly applied for the selection path terminals. With such a construction, the need for the multi-layered wiring on the semiconductor chip is eliminated, and the manufacturing of chips is simplified. Also crosstalk among the row and column wiring paths on the ceramic wiring plate is lessened and the grid wiring is facilitated.
Inventors
- 👤 Masaaki Kusano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 05:29
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H04; H04Q; H04Q3/00; H04Q3/42; H04Q3/52; H04Q3/521; H10W70/611; H10W90/00; H10W90/701; H10W90/721; H10W90/724
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
303 words
A semiconductor speech path switch comprising a plurality of semiconductor chips each including a cross-point element formed in said chips, first electrode means for forming a speech path connected with said cross-point element, and second electrode means for selectively actuating said cross-point element, and wiring plate means including pedestals respectively connected with the first and second electrode means on said chips, a group of terminals disposed on said wiring plate means, and a group of wirings for connecting said group of terminals with said group of pedestals, said plural chips being mounted on said wiring plate means by facedown bonding, thereby to form a matrix array, wherein the improvement comprises said group of wirings comprising a first group of speech path wirings and selection path wirings constituting rows of said matrix array, and a second group of speech path wirings and selection path wirings constituting columns of said matrix array, said first group of speech and selection path wirings forming a first layer and said second group of speech and selection path wirings forming a second layer separated from said first layer by an insulating layer, said first and second group of speech and selection path wirings intersecting to each other through said insulating layer, said first group of speech and selection path wirings being connected with said pedestals through through-holes in said insulating layer and said second group of speech and selection path wirings being connected directly with said pedestals; and wherein said improvement further comprises said group of terminals including a first group of speech path terminals and selection terminals constituting rows of said speech path, and a second group of speech path terminals and selection terminals constituting columns of said speech path, said first and second group of terminals being disposed adjacent to each other on said wiring plate means.
Claim 2
Dependent Claim
303 words
A semiconductor speech path switch comprising a plurality of semiconductor chips each including a cross-point element formed in said chips, first electrode means for forming a speech path connected with said cross-point element, and second electrode means for selectively actuating said cross-point element, and wiring plate means including pedestals respectively connected with the first and second electrode means on said chips, a group of terminals disposed on said wiring plate means, and a group of wirings for connecting said group of terminals with said group of pedestals, said plural chips being mounted on said wiring plate means by facedown bonding, thereby to form a matrix array, wherein the improvement comprises said group of wirings comprising a first group of speech path wirings and selection path wirings constituting rows of said matrix array, and a second group of speech path wirings and selection path wirings constituting columns of said matrix array, said first group of speech and selection path wirings forming a first layer and said second group of speech and selection path wirings forming a second layer separated from said first layer by an insulating layer, said first and second group of speech and selection path wirings intersecting to each other through said insulating layer, said first group of speech and selection path wirings being connected with said pedestals through through-holes in said insulating layer and said second group of speech and selection path wirings being connected directly with said pedestals; and wherein said improvement further comprises said group of terminals including a first group of speech path terminals and selection terminals constituting rows of said speech path, and a second group of speech path terminals and selection terminals constituting columns of said speech path, said first and second group of terminals being disposed adjacent to each other on said wiring plate means.
Claim 3
Dependent Claim
67 words
A semiconductor speech path switch according to claim 1, wherein said first group of speech path terminals and selection terminals are disposed in one side of said wiring plate means, and wherein said second group of speech path terminals and selection terminals are disposed at a position opposite to said first group of speech path terminals and selection terminals along another side of said wiring plate means.
Claim 4
Dependent Claim
111 words
A semiconductor speech path switch according to claim 1 or 2, wherein each of said cross-point elements comprises first and second switching elements, and further wherein said first group of speech path terminals and said second group of speech path terminals comprise a plurality of pairs of A-line terminals for coupling to said first switching elements and B-line terminals for coupling to said second switching elements, and wherein one of said first and second group of terminals is disposed in a train of terminals, A, B, A, B, A, B, A, B and the other group is disposed in a train of terminals A, B, B, A, A, B, B, A.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-12-13 | 1986-06-14 | 1986-12-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-12-13 | 1990-06-14 | 1990-12-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-12-13 | 1994-06-14 | 1994-12-14 | $7700.00 | Window Closed / Lapsed |