US4361846A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Lateral type semiconductor devices with enlarged, large radii collector contact regions for high reverse voltage
Assignee: Hitachi Ltd
•
Filing: 1980-08-07
•
Granted: 1982-11-30
•
Expires: 2000-08-07
Abstract
Abstract Lateral type semiconductor devices are provided which can withstand a high applied reverse voltage and can be effectively employed in semiconductor integrated circuits with an enhanced integration density. These lateral type semiconductor devices include therein an island region formed in a semiconductor supporting region and a diffusion region formed in the island region. The radius of curvature at the pn junction surface of the diffusion region is selected to be at least 1.5 times larger than the depth of the diffusion region. The diffusion region includes electrode mounting portions of large area and the remaining portions having the form of a fine line.
Inventors
- 👤 Kiyoshi Tsukuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 18:31
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/124; H10D10/00; H10D10/60; H10D18/00; H10D18/251
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
129 words
A lateral type semiconductor device, comprising: a semiconductor substrate, a reverse bias voltage means, a first diffusion region, having a conductivity type opposite to that of said substrate to provide a PN junction which withstands said reverse bias voltage applied therebetween, said first diffusion region forming a strip having two end portions and at least one electrode mounting portion formed to have a radius of curvature of at least 1.5 times the depth of said first diffusion region at the outward corners thereof and at least one elongated narrow portion having a width which is narrower than a width of said electrode mounting portion, and a second diffusion region, having the same conductivity type as said first diffusion region, formed by impurity diffusion laterally with said first diffusion region.
Claim 2
Dependent Claim
129 words
A lateral type semiconductor device, comprising: a semiconductor substrate, a reverse bias voltage means, a first diffusion region, having a conductivity type opposite to that of said substrate to provide a PN junction which withstands said reverse bias voltage applied therebetween, said first diffusion region forming a strip having two end portions and at least one electrode mounting portion formed to have a radius of curvature of at least 1.5 times the depth of said first diffusion region at the outward corners thereof and at least one elongated narrow portion having a width which is narrower than a width of said electrode mounting portion, and a second diffusion region, having the same conductivity type as said first diffusion region, formed by impurity diffusion laterally with said first diffusion region.
Claim 3
Dependent Claim
41 words
A lateral type semiconductor device in accordance with claim 1, wherein said second diffusion region is formed to have a radius of curvature of at least 1.5 times larger than the depth thereof at outward corner portions thereof in plane view.
Claim 4
Dependent Claim
31 words
A lateral type semiconductor device in accordance with claim 2, further comprising a third diffusion region, having the same conductivity type as said semiconductor substrate, formed in said second diffusion region.
Claim 5
Dependent Claim
158 words
A lateral type semiconductor device, comprising: a semiconductor substrate, a reverse voltage bias means, a first diffusion region, having a conductivity type opposite to that of said substrate, formed by impurity diffusion from one of the main surfaces of said substrate to provide a PN junction which withstands said reverse bias voltage applied therebetween, said first diffusion region forming a strip having two end portions and including at least one electrode mounting portion, wherein said end portions and said electrode mounting portion are formed to have a radius of curvature at the outward corners thereof of at least 1.5 times the depth of said first diffusion region, and further wherein said strip includes at least one elongated narrow portion having a width which is narrower than a width of said electrode mounting portion, and a second diffusion region, having the same conductivity type as said first diffusion region, formed by impurity diffusion laterally with said first diffusion region.
Claim 6
Dependent Claim
158 words
A lateral type semiconductor device, comprising: a semiconductor substrate, a reverse voltage bias means, a first diffusion region, having a conductivity type opposite to that of said substrate, formed by impurity diffusion from one of the main surfaces of said substrate to provide a PN junction which withstands said reverse bias voltage applied therebetween, said first diffusion region forming a strip having two end portions and including at least one electrode mounting portion, wherein said end portions and said electrode mounting portion are formed to have a radius of curvature at the outward corners thereof of at least 1.5 times the depth of said first diffusion region, and further wherein said strip includes at least one elongated narrow portion having a width which is narrower than a width of said electrode mounting portion, and a second diffusion region, having the same conductivity type as said first diffusion region, formed by impurity diffusion laterally with said first diffusion region.
Claim 7
Dependent Claim
24 words
A lateral type semiconductor device in accordance with claim 4, wherein said electrode mounting portion comprises one of said end portions of said strip.
Claim 8
Dependent Claim
28 words
A lateral type semiconductor device in accordance with claim 1 or 5, wherein said electrode mounting portion comprises a portion located along said strip between said end portions.
Claim 9
Dependent Claim
36 words
A lateral type semiconductor device in accordance with claim 1 or 4, wherein said two end portions of said strip both have a width greater than the width of said elongated narrow portion of said strip.
Claim 10
Dependent Claim
154 words
A lateral type semiconductor device, comprising: a semiconductor substrate, a reverse voltage bias means, a first diffusion region, having a conductivity type opposite to that of said substrate, formed by impurity diffusion from one of the main surfaces of said substrate to provide a PN junction which withstands said reverse bias voltage applied therebetween, said first diffusion region forming a strip having two end portions with at least one of said end portions being an electrode mounting portion, wherein said end portions have a radius of curvature at the outside corner thereof of at least 1.5 times the depth of said first diffusion region, and wherein said strip includes at least one elongated narrow portion having a width which is narrower than a width of said electrode mounting portion, and a second diffusion region, having the same conductivity type as said first diffusion region, formed by impurity diffusion laterally with said first diffusion region.
Claim 11
Dependent Claim
154 words
A lateral type semiconductor device, comprising: a semiconductor substrate, a reverse voltage bias means, a first diffusion region, having a conductivity type opposite to that of said substrate, formed by impurity diffusion from one of the main surfaces of said substrate to provide a PN junction which withstands said reverse bias voltage applied therebetween, said first diffusion region forming a strip having two end portions with at least one of said end portions being an electrode mounting portion, wherein said end portions have a radius of curvature at the outside corner thereof of at least 1.5 times the depth of said first diffusion region, and wherein said strip includes at least one elongated narrow portion having a width which is narrower than a width of said electrode mounting portion, and a second diffusion region, having the same conductivity type as said first diffusion region, formed by impurity diffusion laterally with said first diffusion region.
Claim 12
Dependent Claim
45 words
A lateral type semiconductor device in accordance with claim 1, 6 or 8 wherein said first diffusion region is formed in a U-shaped fashion to at least partially enclose said second diffusion region within the area of said U-shape formed by said first diffusion region.
Claim 13
Dependent Claim
42 words
A lateral type semiconductor device in accordance with claim 9, wherein said first diffusion region has one elongated narrow portion, and wherein said two end portions are both electrode mounting portions which are provided respectively at opposite ends of said narrow portion.
Claim 14
Dependent Claim
77 words
A lateral type semiconductor device in accordance with claim 1, 4 or 8, wherein said first diffusion region is formed in a U-shaped fashion to at least partially enclose said second diffusion region within the area of said U-shaped formed by said first diffusion region, and wherein said second diffusion region is formed to have a radius of curvature of at least 1.5 times larger than the depth thereof at outward corner portions thereof in plane view.
Claim 15
Dependent Claim
44 words
A lateral type semiconductor device in accordance with claim 1, 4 or 8, wherein all regions of said first diffusion region other than said at least one electrode mounting portion have a width which is narrower than a width of said electrode mounting portion.
References Cited (Backward Citations)
CA906667A
Cited
US4193836A
Cited
US3461360A
Cited
US3651565A
Cited
US3878551A
Cited
US3832732A
Cited
US3898483A
Cited
US4131809A
Cited
US3958264A
Cited
US3971060A
Cited
US4099998A
Cited
US4079403A
Cited
US4228451A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-11-29 | 1986-05-31 | 1986-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-11-29 | 1990-05-31 | 1990-11-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-11-29 | 1994-05-31 | 1994-11-30 | $7700.00 | Window Closed / Lapsed |