US3971060A
Expired / Lapsed
US
⏱️ 0.0 years remaining
TTL coupling transistor
Assignee: Texas Instruments Inc
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Filing: 1974-07-12
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Granted: 1976-07-20
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Expires: 1994-07-12
Abstract
Abstract An improved TTL coupling transistor structure wherein a pair of lateral extensions of the base region and overlying opposite type conductivity low resistivity regions provide a pair of resistance-distributed diode elements interconnecting the base and collector regions and acting to control undesirable currents in the device.
Inventors
- 👤 Horst Leuschner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 23:15
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/40; H10D84/401; H10D84/403; H10D84/406; H03; H03K; H03K19/00; H03K19/02; H03K19/08; H03K19/082; H03K19/088; H10D84/60; H10D84/611; H10D84/613; H10D84/615
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
212 words
A transistor device comprising: a. a single crystal body of semiconductor materials; b. a first region of one conductivity type adjacent one surface of said body and of a resistivity suitable to act as the collector of the transistor; c. a second region of the opposite type conductivity adjacent said one surface of said body entirely within and surrounded by said first region and of a resistivity suitable to act as the base of the transistor; d. a plurality of third regions of said one type conductivity adjacent said one surface, each entirely within and surrounded by said second region; e. a pair of elongated extensions of said second regions extending in substantially the same direction from said second region and terminating in areas remote from said third regions; f. a fourth region of said one type conductivity adjacent said one surface having a resistivity approximately that of said third regions and contacting a length of each of said elongated extensions and said first region; g. an ohmic base contact to one of said elongated extensions near the area of its termination; and h. a collector contact making ohmic connection to both said fourth region and the other of said elongated extensions near the area of termination of said other elongated extension.
Claim 2
Dependent Claim
212 words
A transistor device comprising: a. a single crystal body of semiconductor materials; b. a first region of one conductivity type adjacent one surface of said body and of a resistivity suitable to act as the collector of the transistor; c. a second region of the opposite type conductivity adjacent said one surface of said body entirely within and surrounded by said first region and of a resistivity suitable to act as the base of the transistor; d. a plurality of third regions of said one type conductivity adjacent said one surface, each entirely within and surrounded by said second region; e. a pair of elongated extensions of said second regions extending in substantially the same direction from said second region and terminating in areas remote from said third regions; f. a fourth region of said one type conductivity adjacent said one surface having a resistivity approximately that of said third regions and contacting a length of each of said elongated extensions and said first region; g. an ohmic base contact to one of said elongated extensions near the area of its termination; and h. a collector contact making ohmic connection to both said fourth region and the other of said elongated extensions near the area of termination of said other elongated extension.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-07-20 | 1980-01-19 | 1980-07-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-07-20 | 1984-01-19 | 1984-07-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-07-20 | 1988-01-19 | 1988-07-20 | $7700.00 | Window Closed / Lapsed |