Patent US4358782A successfully refreshed from Google Patents.
US4358782A
Expired / Lapsed
US
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Semiconductor device
Assignee: Asahi Kasei Corp
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Filing: 1980-01-17
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Granted: 1982-11-09
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Expires: 2000-01-17
Abstract
Abstract A novel semiconductor device having an oxide semiconductor layer between an amorphous silicon hydride and a metallic layer has been found to have an excellent collection efficiency for light, particularly, in the range of short wavelengths and a high energy conversion efficiency as compared with the conventional Schottky barrier semiconductor device and the semiconductor device having a MIS structure. Further, it has been found that the present novel semiconductor device has an excellent storage stability for a long period of time.
Inventors
- 👤 Kaoru Takasuka
- 👤 Tatsumi Arakawa
- 👤 Fumio Matushita
- 👤 Hidehiko Kobayashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 07:12
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/12; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
75 words
A semiconductor device which comprises: an electrically conductive substrate; an amorphous silicon hydride layer having a thickness of 0.1 to 5 μm on said substrate; an oxide semiconductor layer having a thickness of 50 to 500 A on a surface of said amorphous silicon hydride layer opposite said substrate; and a metallic layer having a thickness of 50 to 200 A on a surface of said oxide semiconductor layer opposite said amorphous silicon hydride layer.
Claim 2
Dependent Claim
75 words
A semiconductor device which comprises: an electrically conductive substrate; an amorphous silicon hydride layer having a thickness of 0.1 to 5 μm on said substrate; an oxide semiconductor layer having a thickness of 50 to 500 A on a surface of said amorphous silicon hydride layer opposite said substrate; and a metallic layer having a thickness of 50 to 200 A on a surface of said oxide semiconductor layer opposite said amorphous silicon hydride layer.
Claim 3
Dependent Claim
56 words
A semiconductor device according to claim 1, wherein said amorphous silicon hydride layer comprises a first layer of doped amorphous silicon hydride contiguous to said electrically conductive substrate and a second layer of non-doped amorphous silicon hydride contiguous to said first layer, said second layer being contiguous to said oxide semiconductor layer opposite said first layer.
Claim 4
Dependent Claim
44 words
A semiconductor device according to claim 2, wherein said first layer of doped amorphous silicon hydride is formed by means of a dopant gas selected from the group consisting of NH 3 , PH 3 , AsH 3 and B 2 H 6 .
Claim 5
Dependent Claim
45 words
A semiconductor device according to claim 1, wherein said oxide semiconductor layer is composed of at least one member selected from the group consisting of TiO 2 , ZnO, SnO 2 , In 2 O 3 , BaO, SiO, Cu 2 O, NiO and FeO.
Claim 6
Dependent Claim
20 words
A semiconductor device according to claim 1, wherein said oxide semiconductor layer has a thickness of 50 to 500 A.
Claim 7
Dependent Claim
31 words
A semiconductor device according to claim 1, wherein said metallic layer is of at least one member selected from the group consisting of Pt, Au, Pd, Ni, Cr, Ir and Rh.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-11-08 | 1986-05-10 | 1986-11-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-11-08 | 1990-05-10 | 1990-11-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-11-08 | 1994-05-10 | 1994-11-09 | $7700.00 | Window Closed / Lapsed |