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US4291318A
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Amorphous silicon MIS device
Assignee: ExxonMobil Technology and Engineering Co
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Filing: 1979-12-03
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Granted: 1981-09-22
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Expires: 1999-12-03
Abstract
Abstract The present invention relates to an amorphous silicon MIS device having an insulating oxide formed by the chemical oxidation of the silicon surface. A process comprising etching the silicon surface followed by a treatment of the etched surface in a sulfur based oxidant forms a controlled thickness oxide layer, useful in modifying the junction forming characteristics of the semiconductor and additionally stabilizing the semiconductor properties of the photoconductive amorphous silicon.
Inventors
- 👤 Joseph L. Sansregret
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:07
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F77/1692; H10D; H10D62/00; H10D62/40; H10D62/402; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/64; H10F10/00; H10F10/10; H10F10/12; H10F71/00; H10F71/10; H10F71/103; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10D62/834; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
92 words
An amorphous silicon semiconductor device having increased open circuit voltage and photovoltaic longevity, said device comprising: a substrate; a layer of amorphous silicon containing hydrogen deposited on said substrate and having a region of SiOx where x is defined by the relationship 1≦x≦2, said SiOx layer formed by first etching a surface region of the amorphous silicon to provide a normal surface than oxidizing said normal surface with a sulfur based oxidant; a metallic layer, contiguous to said oxide and forming a junction to said amorphous silicon, SiOx or the combination thereof.
Claim 2
Dependent Claim
92 words
An amorphous silicon semiconductor device having increased open circuit voltage and photovoltaic longevity, said device comprising: a substrate; a layer of amorphous silicon containing hydrogen deposited on said substrate and having a region of SiOx where x is defined by the relationship 1≦x≦2, said SiOx layer formed by first etching a surface region of the amorphous silicon to provide a normal surface than oxidizing said normal surface with a sulfur based oxidant; a metallic layer, contiguous to said oxide and forming a junction to said amorphous silicon, SiOx or the combination thereof.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-09-21 | 1985-03-23 | 1985-09-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-09-21 | 1989-03-23 | 1989-09-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-09-21 | 1993-03-23 | 1993-09-22 | $7700.00 | Window Closed / Lapsed |