US4358323A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low cost reduced blooming device and method for making the same
Assignee: RCA Corp
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Filing: 1982-01-19
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Granted: 1982-11-09
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Expires: 2002-01-19
Abstract
Abstract An image sensing device includes a wafer having a first input sensing surface region and a second charge storage surface region. A recombination layer extends along the first surface and is spaced therefrom. The method for forming the recombination layer is also disclosed.
Inventors
- 👤 Lloyd F. Wallace
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 10:54
CPC Classifications
H; H01; H01J; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/45; H01J29/451; H01J29/453; H01J29/455; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H10F39/186
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
122 words
A method for controlling blooming in an image sensing device comprising the steps of: preparing a silicon wafer of a first type conductivity, said wafer having first and second major surfaces; forming an insulating layer on the second major surface of said wafer; etching a plurality of apertures through said insulating layer; forming a plurality of regions of a second conductivity type through said apertures; forming an enhanced conductivity region along said first major surface extending into said wafer; and implanting protons into the first surface of said wafer, said protons having an energy of about 80-110 keV so as to provide a dosage of approximately 4.5-5.6×10 15 protons per square centimeter to establish a recombination layer spaced from said first surface.
Claim 2
Independent Claim
122 words
A method for controlling blooming in an image sensing device comprising the steps of: preparing a silicon wafer of a first type conductivity, said wafer having first and second major surfaces; forming an insulating layer on the second major surface of said wafer; etching a plurality of apertures through said insulating layer; forming a plurality of regions of a second conductivity type through said apertures; forming an enhanced conductivity region along said first major surface extending into said wafer; and implanting protons into the first surface of said wafer, said protons having an energy of about 80-110 keV so as to provide a dosage of approximately 4.5-5.6×10 15 protons per square centimeter to establish a recombination layer spaced from said first surface.
Claim 3
Dependent Claim
23 words
The method as in claim 1, further including the step of annealing said wafer so as to diffuse the protons through said wafer.
Claim 4
Dependent Claim
26 words
The method as in claim 2, further including the step of forming, at a reduced temperature, an antireflection coating on the first surface of said wafer.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-11-08 | 1986-05-10 | 1986-11-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-11-08 | 1990-05-10 | 1990-11-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-11-08 | 1994-05-10 | 1994-11-09 | $7700.00 | Window Closed / Lapsed |