Thyristor with segmented turn-on line for directing turn-on current

Claim 1

A thyristor comprising: a semiconductor body having at least four zones of alternate conductivity type, including an emitter zone of a first conductivity type, a base zone of a second conductivity type forming a junction with said emitter zone, said junction intersecting a surface of said body to define an emitter boundary, an emitter electrode in contact with said emitter zone and extending beyond said emitter boundary and into contact with said base zone at a plurality of locations spaced along said emitter boundary to form a plurality of boundary shorts, the portions of said emitter boundary between said boundary shorts forming turn-on segments, said boundary shorts being formed over a substantial majority portion of said emitter boundary relative to said turn-on segments to provide relatively high dV/dt capability, a gate current source including a gate electrode for supplying carriers to said base zone, and means for directing carriers supplied by said gate current source to said turn-on segments including a continuous gate barrier region of said first conductivity type adjacent said base zone and opposite and substantially coextensive with said emitter boundary and carrying said gate electrode, said gate barrier region serving to substantially block gate current from passing between said gate electrode and said base zone, portions of said gate electrode being in contact with said gate barrier region and other portions of said gate electrode contacting said base zone at a plurality of separate locations generally aligned with said turn-on segments for directing carriers supplied by said gate electrode substantially only to said turn-on segments to provide a shortened turn-on line for increased gate sensitivity.